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    Vishay Siliconix IRLZ14L

    MOSFET N-CH 60V 10A TO262-3
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    IRLZ14L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRLZ14L International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ14L International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ14L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-262 Original PDF
    IRLZ14L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRLZ14L Datasheets Context Search

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    marking F53

    Abstract: AN-994 IRLZ14 IRLZ14L IRLZ14S
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRLZ14S/L IRLZ14S) IRLZ14L) 12-Mar-07 marking F53 AN-994 IRLZ14 IRLZ14L IRLZ14S

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262)

    SiHLZ14S

    Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 18-Jul-08 IRLZ14 IRLZ14L IRLZ14S SiHLZ14S-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRLZ14S/L IRLZ14S) IRLZ14L) 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262)

    AN-994

    Abstract: IRLZ14 IRLZ14L IRLZ14S
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRLZ14S/L IRLZ14S) IRLZ14L) AN-994 IRLZ14 IRLZ14L IRLZ14S

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S_RC, IRLZ14L_RC, SiHLZ14S_RC, SiHLZ14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRLZ14S IRLZ14L SiHLZ14S SiHLZ14L AN609, 8649m 6211m 0526u

    AN-994

    Abstract: IRLZ14 IRLZ14L IRLZ14S
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRLZ14S/L IRLZ14S) IRLZ14L) AN-994 IRLZ14 IRLZ14L IRLZ14S

    IRLZ14L

    Abstract: IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14STR-E3
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11 IRLZ14L IRLZ14S SiHLZ14STR-E3

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L IRLZ14S/SiHLZ14S) IRLZ14L/SiHLZ14L) 12-Mar-07

    IRLZ14

    Abstract: IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14S-E3
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 18-Jul-08 IRLZ14 IRLZ14L IRLZ14S SiHLZ14S-E3

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		PDF IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 2011/65/EU

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter