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    IRLZ24 Search Results

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    IRLZ24 Price and Stock

    Rochester Electronics LLC AUIRLZ24NSTRL

    AUTOMOTIVE HEXFET POWER MOSFET
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    DigiKey AUIRLZ24NSTRL Bulk 82,400 413
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    Infineon Technologies AG IRLZ24NPBF

    MOSFET N-CH 55V 18A TO220AB
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    DigiKey IRLZ24NPBF Tube 3,578 1
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    Avnet Americas IRLZ24NPBF Tube 10 Weeks 50
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    Mouser Electronics IRLZ24NPBF 2,120
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    Verical IRLZ24NPBF 2,000 78
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    IRLZ24NPBF 1,029 21
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    Arrow Electronics IRLZ24NPBF 1,033 10 Weeks 1
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    Quest Components IRLZ24NPBF 319
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    TME IRLZ24NPBF 1
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    Chip1Stop IRLZ24NPBF Tube 2,000
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    New Advantage Corporation IRLZ24NPBF 800 1
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    Vishay Siliconix IRLZ24PBF

    MOSFET N-CH 60V 17A TO220AB
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    DigiKey IRLZ24PBF Tube 2,745 1
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    ComSIT USA IRLZ24PBF 450
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    Vishay Siliconix IRLZ24LPBF

    MOSFET N-CH 60V 17A TO262-3
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    DigiKey IRLZ24LPBF Tube 880 1
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    Bristol Electronics IRLZ24LPBF 850
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    Quest Components IRLZ24LPBF 680
    • 1 $2.156
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    • 100 $2.156
    • 1000 $0.8894
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    Vishay Siliconix IRLZ24PBF-BE3

    MOSFET N-CH 60V 17A TO220AB
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    DigiKey IRLZ24PBF-BE3 Tube 841 1
    • 1 $1.64
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    Find more IRLZ24 price and stock on Findchips.com

    IRLZ24 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRLZ24 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLZ24 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO-220AB Original PDF
    IRLZ24 International Rectifier HEXFET Power Mosfet Scan PDF
    IRLZ24 International Rectifier HEXFET Power MOSFET Scan PDF
    IRLZ24 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRLZ24 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLZ24 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRLZ24 Unknown FET Data Book Scan PDF
    IRLZ24L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO-262 Original PDF
    IRLZ24L International Rectifier HEXFET Power Mosfet Scan PDF
    IRLZ24LPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17A TO-262 Original PDF
    IRLZ24N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ24N with Standard Packaging Original PDF
    IRLZ24N International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ24N International Rectifier HEXFET Power Mosfet Original PDF
    IRLZ24N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLZ24N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 55V, 18A, Pkg Style TO-220AB Scan PDF
    IRLZ24NL International Rectifier HEXFET Power Mosfet Original PDF
    IRLZ24NL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRLZ24NL with Standard Packaging Original PDF
    IRLZ24NL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLZ24NLPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 18A TO-262 Original PDF

    IRLZ24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRLZ24L

    Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
    Text: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive


    Original     		PDF IRLZ24S, IRLZ24L, SiHLZ24S SiHLZ24L 2002/95/EC O-263) O-262) 11-Mar-11 IRLZ24L IRLZ24S SiHLZ24L-E3

    Untitled

    Abstract: No abstract text available
    Text: IRLZ24S_RC, IRLZ24L_RC, SiHLZ24S_RC, SiHLZ24L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRLZ24S IRLZ24L SiHLZ24S SiHLZ24L AN609, 8885m 1559m 1050m

    IRLZ24

    Abstract: SiHLZ24 SiHLZ24-E3
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220 O-220 18-Jul-08 IRLZ24 SiHLZ24-E3

    IRLZ24L

    Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
    Text: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single G G D S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRLZ24S, IRLZ24L, SiHLZ24S SiHLZ24L 18-Jul-08 IRLZ24L IRLZ24S SiHLZ24L-E3

    AN-994

    Abstract: IRLZ24N IRLZ24NL IRLZ24NS mbe regulator
    Text: PD - 95584 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ24NSPbF IRLZ24NLPbF l HEXFET Power MOSFET


    Original     		PDF IRLZ24NS) IRLZ24NL) IRLZ24NSPbF IRLZ24NLPbF EIA-418. AN-994 IRLZ24N IRLZ24NL IRLZ24NS mbe regulator

    Untitled

    Abstract: No abstract text available
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: PD - 94998 IRLZ24NPbF • Lead-Free www.irf.com 1 2/11/04 IRLZ24NPbF 2 www.irf.com IRLZ24NPbF www.irf.com 3 IRLZ24NPbF 4 www.irf.com IRLZ24NPbF www.irf.com 5 IRLZ24NPbF 6 www.irf.com IRLZ24NPbF www.irf.com 7 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRLZ24NPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94998 IRLZ24NPbF • Lead-Free 1 IRLZ24NPbF 2 IRLZ24NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


    Original     		PDF IRLZ24NPbF O-220AB O-220AB.

    IRLZ24

    Abstract: No abstract text available
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRLZ24

    smd diode 444

    Abstract: No abstract text available
    Text: IRLZ24S, SiHLZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRLZ24S, SiHLZ24S SMD-220 12-Mar-07 smd diode 444

    IRLZ24A

    Abstract: No abstract text available
    Text: IRLZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.075 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V


    Original     		PDF IRLZ24A O-220 IRLZ24A

    IRLZ24N

    Abstract: No abstract text available
    Text: PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description


    Original     		PDF IRLZ24N O-220 IRLZ24N

    IRLZ24N

    Abstract: IRF1010 E DATASHEET 668 8e IRF1010 irf1010 MOSFET
    Text: PD - 91357C IRLZ24N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91357C IRLZ24N O-220 O-220-AB. O-220AB IRF1010 IRLZ24N IRF1010 E DATASHEET 668 8e IRF1010 irf1010 MOSFET

    IRLZ24

    Abstract: SiHLZ24 SiHLZ24-E3
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 2002/95/EC O-220AB O-220AB 11-Mar-11 IRLZ24 SiHLZ24-E3

    IRLZ24

    Abstract: SiHLZ24 SiHLZ24-E3
    Text: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRLZ24, SiHLZ24 O-220 O-220 18-Jul-08 IRLZ24 SiHLZ24-E3

    IRFP150N equivalent

    Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
    Text: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N


    Original     		PDF IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRFP150N equivalent IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier


    OCR Scan     		PDF IRLZ24S) IRLZ24L)

    444p

    Abstract: No abstract text available
    Text: I IN R 4ÔSSMSS GGISTÌM SOT International [rag Rectifier PD-9.904 IRLZ24S HEXFET Power M O S FE T INTERNATIONAL R E C T I F I E R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature


    OCR Scan     		PDF IRLZ24S 444p

    1RLZ24

    Abstract: F17a 557C AN-994 IRLZ24 IRLZ24S SMD-220 smd kir RK 25 smd diode marking 69a
    Text: International |B» Rectifier PD -9.557C IRLZ24 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive • R D S (on S p ecifie d a t V g s = 4 V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF IRLZ24 O-220 1RLZ24 F17a 557C AN-994 IRLZ24S SMD-220 smd kir RK 25 smd diode marking 69a

    c693

    Abstract: sd marking bh
    Text: PD -9.1358D International IO R Rectifier • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRLZ24NS Low-profile through-hole (IRLZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated IRLZ24NS/L


    OCR Scan     		PDF IRLZ24NS) IRLZ24NL) 1358D IRLZ24NS/L C-693 C-694 c693 sd marking bh

    IRLZ20

    Abstract: IRLZ24 DIODE S3V 08 S3V 8* Rectifier DIODE S3V J50 mosfet DIODE S3V 40 S3V 15 diode
    Text: N-CHANNEL LOGIC LEVEL MOSFET IRLZ24/20 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRLZ24/20 O-220 IRLZ24 IRLZ20 DIODE S3V 08 S3V 8* Rectifier DIODE S3V J50 mosfet DIODE S3V 40 S3V 15 diode

    IRLZ24A

    Abstract: BJCM 2501S 2SC 4145 dI 437 to220
    Text: IRLZ24A Advanced Power MOSFET FEATURES • B V dss = 60 V ^DS on = 0 -0 7 5 ß Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■


    OCR Scan     		PDF IRLZ24A O-220 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D BJCM 2501S 2SC 4145 dI 437 to220

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1358D International IQR Rectifier IRLZ24NS/L HEXFET Power M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRLZ24NS • Low-profilethrough-hole(IRLZ24NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF 1358D IRLZ24NS/L IRLZ24NS) IRLZ24NL)

    Untitled

    Abstract: No abstract text available
    Text: PD-9.557C International ÉÈ Rectifier • 4ÔS54S2 □ G IS 'î flû 205 ■ INR IRLZ24 INTERNATIONAL R E C T I F I E R HEXFET Power M O SFET Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 1 7 5 °C Operating Temperature


    OCR Scan     		PDF S54S2 IRLZ24