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    IRLZ34S Price and Stock

    Vishay Siliconix IRLZ34S

    MOSFET N-CH 60V 30A D2PAK
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    DigiKey IRLZ34S Tube
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    Vishay Siliconix IRLZ34SPBF

    MOSFET N-CH 60V 30A TO263
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    DigiKey IRLZ34SPBF Tube 1,000
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    Vishay Siliconix IRLZ34STRL

    MOSFET N-CH 60V 30A D2PAK
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    International Rectifier IRLZ34S

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    Bristol Electronics IRLZ34S 435 3
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    Quest Components IRLZ34S 348
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    IRLZ34S 50
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    Vishay Intertechnologies IRLZ34SPBF

    Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) D2PAK (Alt: IRLZ34SPBF)
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    EBV Elektronik IRLZ34SPBF 13 Weeks 50
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    IRLZ34S Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRLZ34S International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ34S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLZ34S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A D2PAK Original PDF
    IRLZ34S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLZ34SPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A D2PAK Original PDF
    IRLZ34STRL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRLZ34STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A D2PAK Original PDF
    IRLZ34STRL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLZ34STRR International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRLZ34STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A D2PAK Original PDF
    IRLZ34STRR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRLZ34S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L IRLZ34S/SiHLZ34S) IRLZ34L/SiHLZ34L) 12-Mar-07

    DD 1518

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 18-Jul-08 DD 1518

    AN609

    Abstract: IRLZ34L IRLZ34S SiHLZ34S
    Text: IRLZ34S_RC, IRLZ34L_RC, SiHLZ34S_RC, SiHLZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRLZ34S IRLZ34L SiHLZ34S SiHLZ34L AN609, 4829m 1545m 8453m 8853m 8989m AN609

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description


    Original     		PDF IRLZ34S/L IRLZ34S) IRLZ34L) 08-Mar-07

    IRLZ34L

    Abstract: IRLZ34S SiHLZ34S
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L O-262) IRLT34S, 18-Jul-08 IRLZ34L IRLZ34S

    SiHLZ34L

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ34S, SiHLZ34S) • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 2002/95/EC 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L IRLZ34S/SiHLZ34S) IRLZ34L/SiHLZ34L) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 2002/95/EC O-262)

    AN-994

    Abstract: IRLZ34 IRLZ34L IRLZ34S
    Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description


    Original     		PDF IRLZ34S/L IRLZ34S) IRLZ34L) 12-Mar-07 AN-994 IRLZ34 IRLZ34L IRLZ34S

    m 60 n 03 g10

    Abstract: F53 DIODE AN-994 IRLZ34 IRLZ34L IRLZ34S diode ir 10-16
    Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description


    Original     		PDF IRLZ34S/L IRLZ34S) IRLZ34L) m 60 n 03 g10 F53 DIODE AN-994 IRLZ34 IRLZ34L IRLZ34S diode ir 10-16

    Untitled

    Abstract: No abstract text available
    Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology


    Original     		PDF IRLZ34S, IRLZ34L, SiHLZ34S SiHLZ34L 2002/95/EC 11-Mar-11

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    LL110

    Abstract: IRF7207 irf7105 IRF7342 IRFR024N IRF7317 IRL32 iRF 0420 irFR5305 IRFR9024
    Text: International Rectifier Existing Product The HEXFET SMD Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months Potential products no current plans. see bus.mgmt. Dual SO-8 SOT-223 DPak Effective 14 June, 1999


    Original     		PDF IRF7233 IRF7220 OT-223 IRLML2402 IRF7501/7 IRLMS1902 IRF7210 -400V IRF840S* IRF830S* LL110 IRF7207 irf7105 IRF7342 IRFR024N IRF7317 IRL32 iRF 0420 irFR5305 IRFR9024

    LR 1737 R

    Abstract: flyback transformer for medical resistor 240 2N3906 BAS16 CTX150-4 IRFL014 LT1737 MBRS1100 MBR0520T1
    Text: Final Electrical Specifications LT1737 High Power Isolated Flyback Controller November 2000 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Drives External Power MOSFET with External ISENSE Resistor Supply Voltage Range: 4.5V to 20V Flyback Voltage Limited Only by


    Original     		PDF LT1737 50kHz 250kHz 16-Pin LT1424-5 LT1424-9 LT1425 LT1533 LT1725 sn1737 LR 1737 R flyback transformer for medical resistor 240 2N3906 BAS16 CTX150-4 IRFL014 LT1737 MBRS1100 MBR0520T1

    flyback transformer for medical

    Abstract: IRFL014 LT1737 MBRS1100 2N3906 BAS16 CTX150-4 C1737 DIODE m1 VP1-0190
    Text: LT1737 High Power Isolated Flyback Controller U FEATURES DESCRIPTIO • The LT 1737 is a monolithic switching regulator controller specifically designed for the isolated flyback topology. It drives the gate of an external MOSFET and is generally powered from a DC supply voltage. Output voltage feedback information may be supplied by a variety of methods


    Original     		PDF LT1737 LT1424-9 LT1425 LT1533 LT1725 LT1738 1737fa flyback transformer for medical IRFL014 LT1737 MBRS1100 2N3906 BAS16 CTX150-4 C1737 DIODE m1 VP1-0190

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    Untitled

    Abstract: No abstract text available
    Text: LT1737 High Power Isolated Flyback Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1737 is a monolithic switching regulator controller specifically designed for the isolated flyback topology. It drives the gate of an external MOSFET and is generally


    Original     		PDF LT1737 LT1424-9 LT1425 LT1533 LT1725 LT1738 1737fa

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    TO220-SMD

    Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
    Text: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V


    Original     		PDF BUK465-100A BUK466-100A BUK565-100A BUK7608-55 BUK7614-55 BUK7618-55 BUK7620-55 BUK7624-55 BUK7628-5 BUK7635-55 TO220-SMD TO-220SMD TO220SMD NP55N06ELD STB80N06-10

    A7321

    Abstract: marking 2U diode diode 2U 88
    Text: PD - 9.905A International IQR Rectifier IR L Z 3 4 S /L HEXFET Power MOSFET Advanced Process Technology Surface M ount IRLZ34S Low -profile through-hole (IRLZ34L) 1 75 °C O perating Tem perature Fast Switching Fully Avalanche Rated V dss = 60 V R d s (oh) = 0 .0 5 0 Î2


    OCR Scan     		PDF IRLZ34S) IRLZ34L) A7321 marking 2U diode diode 2U 88