Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
IRLZ34S/SiHLZ34S)
IRLZ34L/SiHLZ34L)
12-Mar-07
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PDF
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DD 1518
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
18-Jul-08
DD 1518
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PDF
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AN609
Abstract: IRLZ34L IRLZ34S SiHLZ34S
Text: IRLZ34S_RC, IRLZ34L_RC, SiHLZ34S_RC, SiHLZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRLZ34S
IRLZ34L
SiHLZ34S
SiHLZ34L
AN609,
4829m
1545m
8453m
8853m
8989m
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description
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Original
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IRLZ34S/L
IRLZ34S)
IRLZ34L)
08-Mar-07
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PDF
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IRLZ34L
Abstract: IRLZ34S SiHLZ34S
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration • Fast Switching • Fully Avalanche Rated Single
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
O-262)
IRLT34S,
18-Jul-08
IRLZ34L
IRLZ34S
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PDF
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SiHLZ34L
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ34S, SiHLZ34S) • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
2011/65/EU
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PDF
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Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
IRLZ34S/SiHLZ34S)
IRLZ34L/SiHLZ34L)
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
O-262)
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PDF
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AN-994
Abstract: IRLZ34 IRLZ34L IRLZ34S
Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description
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Original
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IRLZ34S/L
IRLZ34S)
IRLZ34L)
12-Mar-07
AN-994
IRLZ34
IRLZ34L
IRLZ34S
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PDF
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m 60 n 03 g10
Abstract: F53 DIODE AN-994 IRLZ34 IRLZ34L IRLZ34S diode ir 10-16
Text: PD - 9.905A IRLZ34S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRLZ34S Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description
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Original
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IRLZ34S/L
IRLZ34S)
IRLZ34L)
m 60 n 03 g10
F53 DIODE
AN-994
IRLZ34
IRLZ34L
IRLZ34S
diode ir 10-16
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PDF
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Untitled
Abstract: No abstract text available
Text: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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IRLZ34S,
IRLZ34L,
SiHLZ34S
SiHLZ34L
2002/95/EC
11-Mar-11
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PDF
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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Original
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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PDF
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