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    IRLZ14 Search Results

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    IRLZ14 Price and Stock

    Vishay Siliconix IRLZ14STRLPBF

    MOSFET N-CH 60V 10A D2PAK
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    DigiKey IRLZ14STRLPBF Digi-Reel 2,265 1
    • 1 $2.17
    • 10 $1.387
    • 100 $2.17
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    IRLZ14STRLPBF Cut Tape 2,265 1
    • 1 $2.17
    • 10 $1.387
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    IRLZ14STRLPBF Reel 1,600 800
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    Vishay Siliconix IRLZ14PBF

    MOSFET N-CH 60V 10A TO220AB
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    DigiKey IRLZ14PBF Tube 898 1
    • 1 $1.64
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    New Advantage Corporation IRLZ14PBF 11,150 1
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    Vishay Siliconix IRLZ14PBF-BE3

    MOSFET N-CH 60V 10A TO220AB
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    DigiKey IRLZ14PBF-BE3 Tube 470 1
    • 1 $1.64
    • 10 $1.64
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    • 1000 $0.5006
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    Vishay Siliconix IRLZ14

    MOSFET N-CH 60V 10A TO220AB
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    Bristol Electronics IRLZ14 159
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    Quest Components IRLZ14 127
    • 1 $3.18
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    • 100 $2.12
    • 1000 $1.961
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    Vishay Siliconix IRLZ14S

    MOSFET N-CH 60V 10A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRLZ14S Tube 1,000
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    Find more IRLZ14 price and stock on Findchips.com

    IRLZ14 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRLZ14 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLZ14 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB Original PDF
    IRLZ14 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 60V, 10A, Pkg Style TO-220AB Scan PDF
    IRLZ14 International Rectifier HEXFET Power MOSFET Scan PDF
    IRLZ14 International Rectifier HEXFET Power Mosfet Scan PDF
    IRLZ14 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRLZ14 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRLZ14 Unknown FET Data Book Scan PDF
    IRLZ14 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLZ14 Samsung Electronics N-Channel Logic Level MOSFET Scan PDF
    IRLZ14A Samsung Electronics Advanced Power MOSFET Scan PDF
    IRLZ14L International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ14L International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ14L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-262 Original PDF
    IRLZ14L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLZ14PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ14PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB Original PDF
    IRLZ14PBF-BE3 Vishay Siliconix MOSFET N-CH 60V 10A TO220AB Original PDF
    IRLZ14S International Rectifier HEXFET Power MOSFET Original PDF
    IRLZ14S International Rectifier HEXFET Power Mosfet Original PDF

    IRLZ14 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		IRLZ14, SiHLZ14 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    marking F53

    Abstract: AN-994 IRLZ14 IRLZ14L IRLZ14S
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		IRLZ14S/L IRLZ14S) IRLZ14L) 12-Mar-07 marking F53 AN-994 IRLZ14 IRLZ14L IRLZ14S PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		IRLZ14, SiHLZ14 O-220AB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262) PDF

    irlz14

    Abstract: No abstract text available
    Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		IRLZ14, SiHLZ14 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irlz14 PDF

    SiHLZ14S

    Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 18-Jul-08 IRLZ14 IRLZ14L IRLZ14S SiHLZ14S-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		IRLZ14S/L IRLZ14S) IRLZ14L) 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC O-262) PDF

    AN-994

    Abstract: IRLZ14 IRLZ14L IRLZ14S
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		IRLZ14S/L IRLZ14S) IRLZ14L) AN-994 IRLZ14 IRLZ14L IRLZ14S PDF

    IRLZ14

    Abstract: No abstract text available
    Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		IRLZ14, SiHLZ14 O-220 O-220 18-Jul-08 IRLZ14 PDF

    diode 132 E

    Abstract: diode IR 132 E f1010 9545
    Text: PD - 95457 IRLZ14PbF • Lead-Free www.irf.com 1 6/23/04 IRLZ14PbF 2 www.irf.com IRLZ14PbF www.irf.com 3 IRLZ14PbF 4 www.irf.com IRLZ14PbF www.irf.com 5 IRLZ14PbF 6 www.irf.com IRLZ14PbF + D.U.T ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane


    Original     		IRLZ14PbF O-220AB. O-220AB diode 132 E diode IR 132 E f1010 9545 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14_RC, SiHLZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRLZ14 SiHLZ14 AN609, CONFIGURATI5-Oct-10 8649m 6211m 0526u 9391m PDF

    AN-994

    Abstract: IRLZ14 IRLZ14L IRLZ14S
    Text: PD - 9.903A IRLZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRLZ14S Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


    Original     		IRLZ14S/L IRLZ14S) IRLZ14L) AN-994 IRLZ14 IRLZ14L IRLZ14S PDF

    IRLZ14L

    Abstract: IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14STR-E3
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L 2002/95/EC 11-Mar-11 IRLZ14L IRLZ14S SiHLZ14STR-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		IRLZ14S, IRLZ14L, SiHLZ14S SiHLZ14L IRLZ14S/SiHLZ14S) IRLZ14L/SiHLZ14L) 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		IRLZ14, SiHLZ14 O-220 O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95457 IRLZ14PbF • Lead-Free 1 IRLZ14PbF 2 IRLZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


    Original     		IRLZ14PbF O-220AB O-220AB. PDF

    1RFZ44

    Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
    Text: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS


    OCR Scan     		Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 1RFZ44 1RL520 1RFZ22 IRFZ30 IRFZ41 IRF145 1RL540 IRFZ45 1xys PDF

    IRLZ14

    Abstract: No abstract text available
    Text: International k Rectifier 4A55HS2 0 0 1 5 ^ 5*13 11 NR PD-9.556C IRLZ14 HEXFET® Power MOSFET b5E D INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching


    OCR Scan     		4A55HS2 IRLZ14 554S2 IRLZ14 PDF

    1XYS

    Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
    Text: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR


    OCR Scan     		Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 T0-247 IXTH6N80A O-247 IXTH10N100 1XYS IRFZ41 1XTH5N100 1RLZ34 IRFZ44 IRH254 IRL510 PDF

    IRLZ14

    Abstract: 556C
    Text: International Rectifier P D -9 .5 5 6 C IRLZ14 HEXFET Power MOSFET • Dynamic dv/dt Rating • Logic-Level Gate Drive ^ dss - 60V • RDS on Specified at V gs =4V & 5V • • • • 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		IRLZ14 O-220 IRLZ14 556C PDF

    IRlZ14

    Abstract: IRLZ10
    Text: N-CHANNEL LOGIC LEVEL MOSFET IRLZ14/10 FEATURES • Low er R ds< on • Excellent voltage stability • Fast sw itching spe eds • Ru gg ed polysilicon gate cell structure • Lo w er input ca p acita n ce • Extended sa fe operating area • Improved high tem perature reliability


    OCR Scan     		IRLZ14/10 IRLZ14 IRLZ10 Ti-25Â PDF