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    01N10 Search Results

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    01N10 Price and Stock

    Walsin Technology Corporation 0201N100G250CT

    CAP CER 10PF 25V C0G/NP0 0201
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    DigiKey 0201N100G250CT Digi-Reel 29,900 1
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    0201N100G250CT Cut Tape 29,900 1
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    Walsin Technology Corporation 0201N100J100CT

    CAP CER 10PF 10V C0G/NP0 0201
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    DigiKey 0201N100J100CT Cut Tape 29,629 1
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    0201N100J100CT Digi-Reel 29,629 1
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    Walsin Technology Corporation 0201N101J250CT

    CAP CER 100PF 25V C0G/NP0 0201
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    DigiKey 0201N101J250CT Cut Tape 23,921 1
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    0201N101J250CT Digi-Reel 23,921 1
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    TME 0201N101J250CT 15,000
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    NexGen Digital 0201N101J250CT 1
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    Littelfuse Inc IXTY01N100

    MOSFET N-CH 1000V 100MA TO252AA
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    DigiKey IXTY01N100 Tube 17,451 1
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    Vishay Dale NTHS1206N01N1003KE

    THERM NTC 100KOHM 3964K 1206
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    DigiKey NTHS1206N01N1003KE Digi-Reel 3,960 1
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    NTHS1206N01N1003KE Cut Tape 3,960 1
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    NTHS1206N01N1003KE Reel 2,000 2,000
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    RS NTHS1206N01N1003KE Bulk 2,000
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    01N10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    01N100D

    Abstract: high voltage mosfet n-channel
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C


    Original     		01N100D O-220AB high voltage mosfet n-channel PDF

    01N100D

    Abstract: 98809b ON 534 TO252 01N1
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000


    Original     		01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1 PDF

    521 MOSFET

    Abstract: 01N100 237 521 02
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20


    Original     		01N80 100mA 01N100 O-251 O-252 728B1 521 MOSFET 01N100 237 521 02 PDF

    01n100

    Abstract: 4506v iXTY01N100
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20


    Original     		01N100 100mA 728B1 01n100 4506v iXTY01N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 800 = 1 MΩ V 800 V Continuous ±20 V


    Original     		01N80 100mA 01N100 O-251 728B1 PDF

    01N80

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode VDSS IXTU 01N80 IXTU 01N100 ID25 RDS on 800 V 100 mA 80 W 1000 V 100 mA 80 W Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS TJ = 25°C to 150°C 800 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		01N80 01N100 01N100 O-251 HDM235 PDF

    01N100

    Abstract: TO-251 weight TO252 rthjc TO-251 Outline
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


    Original     		01N100 100mA 01N100 TO-251 weight TO252 rthjc TO-251 Outline PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM


    Original     		01N100 100mA O-251 728B1 PDF

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original     		02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10 PDF

    01N100

    Abstract: MOSFET 546 TO-251 weight 237 521 02 521 MOSFET
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


    Original     		01N100 100mA 728B1 01N100 MOSFET 546 TO-251 weight 237 521 02 521 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20


    Original     		01N100 01N100 100mA O-251 O-252 405B2 PDF

    08GS

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


    Original     		01N100 01N100 100mA O-251 O-252 08GS PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		01N100 100mA O-251 O-25nditions, PDF

    01N80

    Abstract: 01N100 TO252 rthjc TO-251 Outline
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800


    Original     		01N80 100mA 01N100 O-251 O-252 01N80 01N100 TO252 rthjc TO-251 Outline PDF

    telemecanique contactor catalogue

    Abstract: LC1 D12 wiring diagram LC1 K12 Schneider telemecanique contactor lc1 d65 Telemecanique LC1 D12 Telemecanique LC1 D38 LC1 D18 wiring diagram LC1 D09 10 wiring diagram ATS01N232QN Schneider contactor catalogue
    Text: Soft starters ATS 01 Catalogue May 07 General contents Soft starters for asynchronous motors 1 – Altistart 01 2 – Altistart U01 1 Contents 1 - Altistart 01 soft starters for asynchronous motors b Presentation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pages 1/2 and 1/3


    Original     		05/2007-V2 DIA2ED2040201EN telemecanique contactor catalogue LC1 D12 wiring diagram LC1 K12 Schneider telemecanique contactor lc1 d65 Telemecanique LC1 D12 Telemecanique LC1 D38 LC1 D18 wiring diagram LC1 D09 10 wiring diagram ATS01N232QN Schneider contactor catalogue PDF

    Untitled

    Abstract: No abstract text available
    Text: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR


    OCR Scan     		01N80 01N100 O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS High Voltage MOSFET N-Channel, Enhancement Mode V DSS D DS on ^D25 80 0 V 100 m A 80 Q 1000 V 100 m A 80 Q IX T U 0 1 N 80 IX T U 0 1 N 100 Preliminary data Maximum Ratings 01N80 01N100 Symbol Test Conditions V DSS Td = 25°C to 150°C 800 1000 V


    OCR Scan     		01N80 01N100 O-251 PDF

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode V DSS IX T U 0 1 N 8 0 tXTU 0 1 N 10 0 p ^D25 DS on a 800 V 100 m A 80 1000 V 100 m A 80 Q Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 v*D S S ^ = 25°G to 150°C 800 1000 V V« ^ 800


    OCR Scan     		01N80 01N100 O-251 PDF

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240 PDF

    IRFP 640

    Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
    Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140


    OCR Scan     		135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100 PDF

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 PDF