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    01N1 Search Results

    01N1 Result Highlights (5)

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    RJE73188001N1 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Shield, With LEDs. Visit Amphenol Communications Solutions
    10145226-1201N13LF Amphenol Communications Solutions DDR4 DIMM, Storage and Server Connector, Vertical , Through Hole, 288 Position , 0.85mm (0.033in) Pitch Visit Amphenol Communications Solutions
    10145226-0201N11LF Amphenol Communications Solutions DDR4 DIMM, Storage and Server Connector, Vertical , Through Hole, 288 Position , 0.85mm (0.033in) Pitch Visit Amphenol Communications Solutions
    10145226-0201N13LF Amphenol Communications Solutions DDR4 DIMM, Storage and Server Connector, Vertical , Through Hole, 288 Position , 0.85mm (0.033in) Pitch Visit Amphenol Communications Solutions
    10145226-1201N11LF Amphenol Communications Solutions DDR4 DIMM, Storage and Server Connector, Vertical , Through Hole, 288 Position , 0.85mm (0.033in) Pitch Visit Amphenol Communications Solutions
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    Walsin Technology Corporation 0201N180J500CT

    CAP CER 18PF 50V C0G/NP0 0201
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    DigiKey 0201N180J500CT Digi-Reel 29,515 1
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    Walsin Technology Corporation 0201N101J250CT

    CAP CER 100PF 25V C0G/NP0 0201
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    DigiKey 0201N101J250CT Digi-Reel 26,421 1
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    0201N101J250CT Cut Tape 26,421 1
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    NexGen Digital 0201N101J250CT 1
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    Walsin Technology Corporation 0201N150J250CT

    CAP CER 15PF 25V C0G/NP0 0201
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    NIDEC Components MFS201N-19-Z

    SWITCH SLIDE DPDT 300MA 30V
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    DigiKey MFS201N-19-Z Bag 1,177 1
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    Mean Well SPU01N-12

    DC DC CONVERTER 12V 1W
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    DigiKey SPU01N-12 Bulk 155 1
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    RS SPU01N-12 Bulk 20 12 Weeks 1
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    Master Electronics SPU01N-12 80
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    Sager SPU01N-12 1
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    01N1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    01N100D

    Abstract: high voltage mosfet n-channel
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C


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    01N100D O-220AB high voltage mosfet n-channel PDF

    01N100D

    Abstract: 98809b ON 534 TO252 01N1
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000


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    01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1 PDF

    521 MOSFET

    Abstract: 01N100 237 521 02
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20


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    01N80 100mA 01N100 O-251 O-252 728B1 521 MOSFET 01N100 237 521 02 PDF

    01n100

    Abstract: 4506v iXTY01N100
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20


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    01N100 100mA 728B1 01n100 4506v iXTY01N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 800 = 1 MΩ V 800 V Continuous ±20 V


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    01N80 100mA 01N100 O-251 728B1 PDF

    01N80

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode VDSS IXTU 01N80 IXTU 01N100 ID25 RDS on 800 V 100 mA 80 W 1000 V 100 mA 80 W Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS TJ = 25°C to 150°C 800 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    01N80 01N100 01N100 O-251 HDM235 PDF

    01N100

    Abstract: TO-251 weight TO252 rthjc TO-251 Outline
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


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    01N100 100mA 01N100 TO-251 weight TO252 rthjc TO-251 Outline PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM


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    01N100 100mA O-251 728B1 PDF

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


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    02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10 PDF

    01N100

    Abstract: MOSFET 546 TO-251 weight 237 521 02 521 MOSFET
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


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    01N100 100mA 728B1 01N100 MOSFET 546 TO-251 weight 237 521 02 521 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20


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    01N100 01N100 100mA O-251 O-252 405B2 PDF

    08GS

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


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    01N100 01N100 100mA O-251 O-252 08GS PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    01N100 100mA O-251 O-25nditions, PDF

    01N80

    Abstract: 01N100 TO252 rthjc TO-251 Outline
    Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800


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    01N80 100mA 01N100 O-251 O-252 01N80 01N100 TO252 rthjc TO-251 Outline PDF

    TMS320LC546A

    Abstract: TMS320LC545A
    Text: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus


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    TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A PDF

    TMS320LC546A

    Abstract: TMS320LC545A
    Text: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus


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    TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A PDF

    TMS320LC546A

    Abstract: TMS320LC545A
    Text: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus


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    TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A PDF

    TMS320LC546A

    Abstract: TMS320LC545A
    Text: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus


    Original
    TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit TMS320LC546A TMS320LC545A PDF

    IFR 740

    Abstract: TMS320VC54x C541 C542 LC549 TMS320C541 TMS320C54x, instruction set SPRS039 TMS320LC546A TMS320LC545A
    Text: TMS320C54x, TMS320LC54x, TMS320VC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS SPRS039C – FEBRUARY 1996 – REVISED DECEMBER 1999 D Advanced Multibus Architecture With Three D D D D D D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus


    Original
    TMS320C54x, TMS320LC54x, TMS320VC54x SPRS039C 16-Bit 40-Bit 17-Bit IFR 740 TMS320VC54x C541 C542 LC549 TMS320C541 TMS320C54x, instruction set SPRS039 TMS320LC546A TMS320LC545A PDF

    Untitled

    Abstract: No abstract text available
    Text: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR


    OCR Scan
    01N80 01N100 O-251 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS High Voltage MOSFET N-Channel, Enhancement Mode V DSS D DS on ^D25 80 0 V 100 m A 80 Q 1000 V 100 m A 80 Q IX T U 0 1 N 80 IX T U 0 1 N 100 Preliminary data Maximum Ratings 01N80 01N100 Symbol Test Conditions V DSS Td = 25°C to 150°C 800 1000 V


    OCR Scan
    01N80 01N100 O-251 PDF

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan
    02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel, Enhancement Mode V DSS IX T U 0 1 N 8 0 tXTU 0 1 N 10 0 p ^D25 DS on a 800 V 100 m A 80 1000 V 100 m A 80 Q Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 v*D S S ^ = 25°G to 150°C 800 1000 V V« ^ 800


    OCR Scan
    01N80 01N100 O-251 PDF

    912 12B

    Abstract: FCR16 M30100F3FP cs 46 204
    Text: M30I00F3FP - I FCRI6 . 0M2G Udd= 5 [U l Fig.a~d Ta= 20 Edeg] 0 Tupical o a. U1H/U1L [Ul 7 i . . mu b. U2H/U2L 7 5 3 5 '.3 5 U ?H - , c. Fosc 4 fr R f V V J \V\ VfL , j 8 [U] - I _ 1_ 1_ A L - . A V V V J I I I I I— - -0 - •04 -a -_ 1_ _ 1_ _ 1_ L _ _ 1_ 1_ 1_ 1_ L _ _ 1_ 1_ 1_ I


    OCR Scan
    M30100F3FP FCR16 912 12B cs 46 204 PDF