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    Z14 J Price and Stock

    Pulse Electronics Corporation JXD2-0Z14NL

    Modular Connectors / Ethernet Connectors CONN RJ45 1X1 100D NO LED TY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JXD2-0Z14NL 1,550
    • 1 $6.71
    • 10 $5.73
    • 100 $5.73
    • 1000 $4.48
    • 10000 $3.91
    		Buy Now

    Toshiba America Electronic Components TC7PZ14FU,LJ(CT

    Inverters L-MOS SHS series US6 Sing. Schmitt Buffer
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TC7PZ14FU,LJ(CT 466,522
    • 1 $0.2
    • 10 $0.143
    • 100 $0.089
    • 1000 $0.068
    • 10000 $0.047
    		Buy Now

    Texas Instruments LMZ14202TZE-ADJ/NOPB

    Switching Voltage Regulators 2A pwr Module w/ 42V Max Input Vtg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LMZ14202TZE-ADJ/NOPB 3,748
    • 1 $12.96
    • 10 $12.86
    • 100 $10.89
    • 1000 $10.53
    • 10000 $10.53
    		Buy Now

    Texas Instruments LMZ14203TZE-ADJ/NOPB

    Switching Voltage Regulators 3A pwr Module w/ 42V Max Input Vtg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LMZ14203TZE-ADJ/NOPB 1,770
    • 1 $15.52
    • 10 $15.4
    • 100 $13.26
    • 1000 $12.78
    • 10000 $12.78
    		Buy Now

    Texas Instruments LMZ14203TZX-ADJ/NOPB

    Switching Voltage Regulators 3A Pwr Mod w/ 42V max Input Vtg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LMZ14203TZX-ADJ/NOPB 2,130
    • 1 $16.57
    • 10 $15.23
    • 100 $12.86
    • 1000 $11.44
    • 10000 $11.44
    		Buy Now
    Find more Z14 J price and stock on Findchips.com

    Z14 J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BZX84-3V3 z14

    Abstract: c5v6 BZX84 bzx84-3v3 BZX84C BZX84-C27 c4v7 bzx843v3 c6v2
    Text: Transys Electronics L I M I T E D BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 Marking BZX84–C3V3 = Z14 C3V6 = Z15 C3V9 = Z16 C4V3 = Z17 C4V7 = Zl


    Original     		PDF BZX84C BZX84 BZX84-C27 BZX84-3V3 z14 c5v6 bzx84-3v3 BZX84-C27 c4v7 bzx843v3 c6v2

    Sallen-Key

    Abstract: Z4 SOT23 opamp applications schematics Z14 SC70-6 Z14 SOT23-6 Z8 SOT23 sot23t cmos opamp Z6 SOT23 z1 sot23
    Text: AN2995 Demonstration board user guidelines for single operational amplifiers Introduction This demonstration board is designed to help in the characterization of single operational amplifiers in SOT23-5 two different pinouts and SC70-5 packages. Operational amplifiers


    Original     		PDF AN2995 OT23-5 SC70-5 OT23-6 SC70-6 Sallen-Key Z4 SOT23 opamp applications schematics Z14 SC70-6 Z14 SOT23-6 Z8 SOT23 sot23t cmos opamp Z6 SOT23 z1 sot23

    EEA-PAM-523-A-32

    Abstract: EEA-PAM-571-A-32 EEA-PAM-533-A-32 EEA-PAM-525-A-32 EEA-PAM-561-A-32 EEA-PAM-535-A-32 vickers eea-pam-533-a-32 EEA-PAM 561 A 12 vickers amplifier card EEA-PAM-581-A-32 EEA-PAM-513-A-32
    Text: Vickers Accessories Power Amplifier EEA-PAM-5*-A-32 for Proportional Control Valves Contents General Description p The following power amplifier models are covered in this catalog The power amplifier has five voltage g i inputs t one ( iinverting ti ) and


    Original     		PDF -A-32 EEA-PAM-513-A-32 EEA-PAM-523-A-32 EEA-PAM-571-A-32 EEA-PAM-533-A-32 EEA-PAM-525-A-32 EEA-PAM-561-A-32 EEA-PAM-535-A-32 vickers eea-pam-533-a-32 EEA-PAM 561 A 12 vickers amplifier card EEA-PAM-581-A-32 EEA-PAM-513-A-32

    7Z14

    Abstract: No abstract text available
    Text: Revised June 2000 NC7SZ14 TinyLogic UHS Inverter with Schmitt Trigger Input General Description Features The NC7SZ14 is a single Inverter with Schmitt Trigger input from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced CMOS


    Original     		PDF NC7SZ14 7Z14

    Z14 SC70-6

    Abstract: NC7WZ14
    Text: Revised June 2000 NC7WZ14 TinyLogic UHS Dual Inverter with Schmitt Trigger Inputs General Description Features The NC7WZ14 is a dual inverter with Schmitt trigger input from Fairchild’s Ultra High Speed Series of TinyLogic in the space saving SC70 6-lead package. The device is fabricated with advanced CMOS technology to achieve ultra


    Original     		PDF NC7WZ14 Z14 SC70-6

    7z14

    Abstract: 7z14 sot23 NC7SZ14P5X NC7SZ14M5X NC7SZ14P5 Z14 SC70 MA05B MO-178 NC7SZ14 NC7SZ14M5
    Text: Revised January 2001 NC7SZ14 TinyLogic UHS Inverter with Schmitt Trigger Input General Description Features The NC7SZ14 is a single Inverter with Schmitt Trigger input from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced CMOS


    Original     		PDF NC7SZ14 NC7SZ14 7z14 7z14 sot23 NC7SZ14P5X NC7SZ14M5X NC7SZ14P5 Z14 SC70 MA05B MO-178 NC7SZ14M5

    NC7WZ14

    Abstract: Z14 SC70 NC7WZ14P6 NC7WZ14P6X SC70-6
    Text: Revised January 2001 NC7WZ14 TinyLogic UHS Dual Inverter with Schmitt Trigger Inputs General Description Features The NC7WZ14 is a dual inverter with Schmitt trigger input from Fairchild’s Ultra High Speed Series of TinyLogic in the space saving SC70 6-lead package. The device is fabricated with advanced CMOS technology to achieve ultra


    Original     		PDF NC7WZ14 NC7WZ14 Z14 SC70 NC7WZ14P6 NC7WZ14P6X SC70-6

    Untitled

    Abstract: No abstract text available
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


    Original     		PDF TQM8M9074 20-pin

    16L8

    Abstract: R4700
    Text: Galileo Technology, Inc. Secondary Cache Module For R4600/R4700 CPUs Galileo-2 Preliminary July 1995, Rev. 2 FEATURES OVERVIEW • 512K or 256KByte secondary cache module for the R4600 and R4700 RISC processors • 50 MHz bus frequency support • Zero wait state to the first word


    Original     		PDF R4600/R4700 256KByte R4600 R4700 GT64012 16L8

    TQM8M9074

    Abstract: Z11 Marking Code
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


    Original     		PDF TQM8M9074 20-pin TQM8M9074 Z11 Marking Code

    D-97816 lohr

    Abstract: rexroth HED 4 GDME 311 mannesmann rexroth Z15L24 RN181 rn181.04 D-97813 GDME rexroth
    Text: RDE 50 060-E/08.95 Hydro-elektrischer Druckschalter Typ HED 8, Serie 1X Hydro-electric Pressure switch Type HED 8, Series 1X RDE 50 060-E/08.95 Ersetzt / Replaces: 12.94 Bei Ersatzteilbestellung bitte die komplette Typenbezeichnung siehe Typenschild angeben.


    Original     		PDF 060-E/08 D-97813 D-97816 D-97816 lohr rexroth HED 4 GDME 311 mannesmann rexroth Z15L24 RN181 rn181.04 GDME rexroth

    RO4350B

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF MMRF1021N MMRF1021NT1

    GRM55DR61H106KA88L

    Abstract: MW7IC2040N atc100b0r8bt500xt atc100b6r8ct500xt multicomp chip resistor CRCW12065601FKEA Pcb 065-44 ATC100B1R0BT500XT 02499 A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 0, 2/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 GRM55DR61H106KA88L atc100b0r8bt500xt atc100b6r8ct500xt multicomp chip resistor CRCW12065601FKEA Pcb 065-44 ATC100B1R0BT500XT 02499 A115

    J118 MOSFET

    Abstract: j122 mosfet AGR09085E AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J
    Text: Preliminary Data Sheet January 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09085E Hz--895 AGR09085E incorporati2-4106) DS01-209RFPP J118 MOSFET j122 mosfet AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J

    agere c8 c1

    Abstract: 100b8r2jw 100B6R8JW
    Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diode BZX584C2V4-BZX584C39 ZENER DIODE SOD-523 FEATURES • Planar Die Construction • 100mW Power Dissipation • Zener Voltages from 2.4 – 39V Maximum Ratings @TA=25℃ unless otherwise specified


    Original     		PDF OD-523 BZX584C2V4-BZX584C39 OD-523 100mW BZX584C27 BZX584C30 BZX584C33 BZX584C36 BZX584C39 300us.

    A5M0

    Abstract: IC 2 5/A5M06
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diode BZX584C2V4-BZX584C39 ZENER DIODE SOD-523 FEATURES • Planar Die Construction • 100mW Power Dissipation • Zener Voltages from 2.4 – 39V Maximum Ratings @TA=25℃ unless otherwise specified


    Original     		PDF OD-523 BZX584C2V4-BZX584C39 OD-523 100mW BZX584C27 BZX584C30 BZX584C33 BZX584C36 BZX584C39 300us.

    CEE2X56S-V3Z14

    Abstract: EE2X92SC-VI2Z14 Framatome 211 pc burndy card edge 2,54 CEE2X91S-V11Z14 27Z14 54461 T8901 burndy CARD EDGE 14PTS
    Text: CEE2X91S-V7Z14 CEE2X91S-VI1Z14 36 75 91 91 112 150 182 182 TABLE OF DIMENSIONS N& OF CONTACT PARS D E BAY A BAY B 11 45 .5 9 0 N4.991 Z39Q rSB.171 37 38 1.890 [4&011 1.940 [49.281 42 49 2.140 r5 4 J6 l 2.490 I83 45 1 42 49 2.140 rS 4 .3 6 l 2.490 f8 3 ¿ 5 l


    OCR Scan     		PDF CEE2X56S-V3Z14 CEE2X75S-V3Z14 CEE2X91S-V7Z14 CEE2X91S-VI1Z14 Y14JM 30t48] SE95508 EE2X92SC-VI2Z14 Framatome 211 pc burndy card edge 2,54 CEE2X91S-V11Z14 27Z14 54461 T8901 burndy CARD EDGE 14PTS

    JD 16

    Abstract: ecg rectifier diode ECG605 1N415C diode 1N415C Z41A K596 595-AA 1N416E diode ecg 125
    Text: PHILIPS E C INC G S4E » • IECG bfe5312fl 00D7E05 244 Diode and Rectifier Outlines cont'd 610 611 612 613 614 L . .3 6 0 " _ J9.I4) .t9? .200 (5 ) ( 5 .0 8 ) .18 < 4.6 ) DIA .IB S ( 4 TO ) n COMMON CATHOOC 7 .787 ■M «H ! L _ .4 2 5 "_J .110' k - f K


    OCR Scan     		PDF 0007E05 ECG605 ECG113A ECG120 ECG582 ECG581 O-220 1N415C 1N415E 1N416C JD 16 ecg rectifier diode ECG605 1N415C diode Z41A K596 595-AA 1N416E diode ecg 125

    transistor z14 L

    Abstract: transistor z9 Transistor Z14
    Text: GFCIOIOA GFCIOIOA G F CIOIOA 16-BIT BARREL SHIFTER GENERAL DESCRIPTION: THE GFCIOIOA MEGAFUNCTION PERFORMS » 16-BIT END-AROUND SHIFT, OR A BARREL SHIFT. THERE ARE FOUR CONTROL LINES SI, S2 , S4, AND SB TO DETERMINE HOW MANY PLACES TO THE LEFT THE 16-BIT INPOTS (R15 THROUGH RO) WILL BE SHIFTED AT THE OUTPUTS


    OCR Scan     		PDF 16-BIT LL7000 LSA2000 R5R14 R13R12R11 R12R11 R15R14 R13R12 transistor z14 L transistor z9 Transistor Z14

    marking code ZENER

    Abstract: BZX84C5V1 bzx84c BZX84C3V3 z14 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B MMBZ5225B
    Text: JGD BZX84C - SERIES o SURFACE MOUNT ZENER DIODES/SOT - 23 Ta = 25^ CrossReference Mar­ king Code Part No. Zener Voltage @ Izt Vz V Max.Dyn. Test Max.Dyn. Test Imped. Current Imped. Current @lzk ¿Izt Rev. Current @Vr Temp Coeff. @Izt Zzt(Q ) Izt(mA) Zzk(Q ) Izk(mA) avz( %/k; 1K/ulA)


    OCR Scan     		PDF BZX84C BZX84C2V7 MMBZ5223B BZX84C3 MMBZ5225B BZX84C3V3 MMBZ5226B BZX84C3V6 MMBZ5227B SZX84C3V9 marking code ZENER BZX84C5V1 BZX84C3V3 z14