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    ATC100A101JP150XT Price and Stock

    American Technical Ceramics Corp ATC100A101JP150XT

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0001 uF, SURFACE MOUNT, 0606
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    Quest Components ATC100A101JP150XT 520
    • 1 $2.64
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    • 1000 $1.089
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    ATC100A101JP150XT 520
    • 1 $2.64
    • 10 $2.64
    • 100 $2.64
    • 1000 $1.089
    • 10000 $1.089
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    Kyocera AVX Components 100A101JP150XT

    Silicon RF Capacitors / Thin Film 100PF 150V 5% 0505
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    TTI 100A101JP150XT Reel 500
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    • 1000 $1.46
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    Kyocera AVX Components 100A101JP150XTV

    Silicon RF Capacitors / Thin Film 150V 100pF Tol 5% Las Mkg Vertical
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    TTI 100A101JP150XTV Reel 500
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    • 1000 $1.98
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    ATC100A101JP150XT Datasheets Context Search

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    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    ATC600F1R8BT250XT

    Abstract: ATC600F220JT250XT lte reference design ATC100A100JP150X MMG3014N ATC200B393KP50XT ATC100A101JP150X
    Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically


    Original     		PDF 74claims, MMG3014N MRFG35010AN ATC600F1R8BT250XT ATC600F220JT250XT lte reference design ATC100A100JP150X ATC200B393KP50XT ATC100A101JP150X

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically


    Original     		PDF MMG3014N MRFG35010AN

    RO4350B

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B