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    Kyocera AVX Components 100B1R0BT500XT

    Silicon RF Capacitors / Thin Film 500volts 1pF
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    Mouser Electronics 100B1R0BT500XT 1,406
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    TTI 100B1R0BT500XT Reel 500
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    American Technical Ceramics Corp ATC100B1R0BT500XT

    CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.000001 uF, SURFACE MOUNT
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    Quest Components ATC100B1R0BT500XT 865
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    ATC100B1R0BT500XT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12065G105AT2A

    Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3 PDF

    ATC 1084

    Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


    Original     		MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 PDF

    mrf5s19060nr1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6 PDF

    C5750X7S2A106MT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz


    Original     		MRF8S18210WHS MRF8S18210WHSR3 MRF8S18210WGHSR3 from1805 MRF8S18210WHSR3 C5750X7S2A106MT PDF

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS PDF

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 PDF

    ATC100B390JT500XT

    Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X PDF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NB
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NB PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		AFT27S006N AFT27S006NT1 PDF

    LTE impedance tuner

    Abstract: MRF8HP21080 CW12010T0100G MRF8HP21080HR3 J952 j179 j934 CW12010T0100GBK J9-22 j922
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		MRF8HP21080H MRF8HP21080HR3 MRF8HP21080HSR3 LTE impedance tuner MRF8HP21080 CW12010T0100G J952 j179 j934 CW12010T0100GBK J9-22 j922 PDF

    J771

    Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 J771 gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 TLX8-0300 a113 bolt MRF5S21045N PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1 PDF

    C5750X7S2A106M

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 1, 11/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.


    Original     		AFT18S230S AFT18S230SR3 C5750X7S2A106M PDF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 MRF6S18060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and


    Original     		MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 PDF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045N PDF

    IS680-280

    Abstract: MWE6IC9080N AN3263 AN1977 AN1987 MWE6IC9080NR1 atc100b6r8
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9080N Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on-chip matching that makes it usable from 865 to 960 MHz. This multi-stage


    Original     		MWE6IC9080N MWE6IC9080N MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1 MWE6IC9080GNR1 IS680-280 AN3263 AN1977 AN1987 atc100b6r8 PDF

    MW7IC18100NR1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 3, 3/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


    Original     		MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 --63ubsidiaries, MRF6S18100NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and


    Original     		MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1 PDF