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    K596 Price and Stock

    Rochester Electronics LLC 2SK596S-C

    JFET N-CH 1MA 3SPA
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    DigiKey 2SK596S-C Bag 3,958,319 5,323
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    Rochester Electronics LLC 2SK596S-A

    JFET N-CH 1MA 3SPA
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    DigiKey 2SK596S-A Bag 16,999 4,438
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    onsemi KSK596BU

    JFET N-CH 20V 1MA TO92S
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    DigiKey KSK596BU Bulk 10,000
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    onsemi 2SK596S-A

    JFET N-CH 1MA 3SPA
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    Newark 2SK596S-A Bulk 5,350
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    Rochester Electronics 2SK596S-A 4,000 1
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    onsemi 2SK596S-C

    JFET N-CH 1MA 3SPA
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    Avnet Americas 2SK596S-C Bulk 4 Weeks 6,411
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    Newark 2SK596S-C Bulk 6,420
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    Rochester Electronics 2SK596S-C 1,204,635 1
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    Find more K596 price and stock on Findchips.com

    K596 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K596 Jiangsu Changjiang Electronics Technology Si N-CHANNEL JUNCTION FET Original PDF
    K596 Unisonic Technologies CAPACITOR MICROPHONE APPLIATIONS Original PDF
    K596-TO-92S Jiangsu Changjiang Electronics Technology Si N-CHANNEL JUNCTION FET Original PDF

    K596 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K596

    Abstract: No abstract text available
    Text: UTC K596 N-CHANNEL JUNCTION FET CAPACITOR MICROPHONE APPLICATIONS FEATURES *Especially Suited for use in Audio, Telephone Capacitor Microphones *Excellent Voltage characteristic *Excellent Transient Characteristic 1 TO-92SP 1:SOURCE 2:GATE 3. DRAIN ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


    Original     		PDF O-92SP QW-R216-001 K596

    K596

    Abstract: KTK596 b3 marking on a diode diode marking b2 Marking B2 marking 2004 B Y device marking
    Text: SEMICONDUCTOR K596 MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking K596 1 B 2 No. 2007. 1. 9 401 3 Item Marking Description Device Name K596 K596 IDSS Rank B B B1, B2, B3 , C, Y, GR Lot No. 401 2004. 1st Week


    Original     		PDF KTK596 O-92M K596 KTK596 b3 marking on a diode diode marking b2 Marking B2 marking 2004 B Y device marking

    K596 b 01

    Abstract: K596
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors K596 TO-92S Si N-CHANNEL JUNCTION FET 1. SOURCE FEATURES Power dissipation PCM: 2. GATE 0.1 W Tamb=25℃ 3. DRAIN Gate Current 10 mA I G: Drain current 1 mA I D: Drain-Source voltage


    Original     		PDF O-92S O-92S K596 b 01 K596

    K596 b 01

    Abstract: K596
    Text: K596 K596 TO-92S Si N-CHANNEL JUNCTION FET 1. SOURCE FEATURES Power dissipation PCM: 2. GATE 0.1 W Tamb=25℃ 3. DRAIN Gate Current I G: 10 mA Drain current 1 mA I D: Drain-Source voltage -20 V BVGDO: Operating and storage junction temperature range 123


    Original     		PDF O-92S K596 b 01 K596

    K596

    Abstract: capacitor Microphones CAPACITOR MICROPHONE
    Text: UTC K596 N-CHANNEL JUNCTION FET CAPACITOR MICROPHONE APPLICATIONS FEATURES *Especially Suited for use in Audio, Telephone Capacitor Microphones *Excellent Voltage characteristic *Excellent Transient Characteristic 1 TO-92SP 1:SOURCE 2:GATE 3. DRAIN ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


    Original     		PDF O-92SP QW-R207-001 110Hz K596 capacitor Microphones CAPACITOR MICROPHONE

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K596 N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  FEATURES *Especially Suited for use in Audio, Telephone Capacitor Microphones *Excellent Voltage characteristic *Excellent Transient Characteristic  ORDERING INFORMATION


    Original     		PDF K596L-x-T9S-K K596G-x-T9S-K O-92SP QW-R216-001

    K596

    Abstract: "N-Channel JFET" capacitance Microphones capacitor Microphones
    Text: UNISONIC TECHNOLOGIES CO., LTD K596 N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS „ FEATURES *Especially Suited for use in Audio, Telephone Capacitor Microphones *Excellent Voltage characteristic *Excellent Transient Characteristic *Pb-free plating product number: K596L


    Original     		PDF K596L K596-x-T9S-K K596L-x-T9S-K O-92SP QW-R216-001 K596 "N-Channel JFET" capacitance Microphones capacitor Microphones

    TO92S package

    Abstract: K596 fet data book free download TO-92S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors K596 ＴＯ－９２Ｓ Si N-CHANNEL JUNCTION FET 1.SOURCE FEATURES Power dissipation PCM: 0.1W（Tamb=25℃） Gate Current I G: 10mA Drain current I D : 1mA


    Original     		PDF O-92S -100A 270TYP 050TYP TO92S package K596 fet data book free download TO-92S

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors K596 TO-92S Si N-CHANNEL JUNCTION FET 1. SOURCE FEATURES z Especially suited for use in audio, telephone capacitor microphones z Excellent voltage characteristic z Excellent transient characteristic


    Original     		PDF O-92S O-92S

    K596 b 01

    Abstract: K596
    Text: K596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information


    Original     		PDF STK596M STK596M O-92M KST-I017-002 K596M K596 b 01 K596

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    PCR406

    Abstract: PCR406 equivalent HIT5609 2SA928A equivalent pcr406 2212PA 9601KA 9103N 2sC5200, 2SA1943, 2sc5198 2SC3807 equivalent
    Text: 芯片型号 典型成品型 号 极 性 HFE MIN HFE MAX HFE IC mA HFE VCE(V) VCESAT(V) MAX VCESAT(V) IC(mA) VCESAT(V) IB(mA) 背面金 属 典型封装形 式 2007NA 2N3904 N 0.2 0.625 65 43 6 80 300 10 1 0.2 10 1 金 TO-92 2007PA 2N3906 P 0.2 0.625 45 43


    Original     		PDF 2007NA 2N3904 2007PA 2N3906 2110NA 2SC1815 2110PA 2SA1015 2215NA PCR406 PCR406 equivalent HIT5609 2SA928A equivalent pcr406 2212PA 9601KA 9103N 2sC5200, 2SA1943, 2sc5198 2SC3807 equivalent

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    K596

    Abstract: K596 b 01 STK596M CAPACITOR MICROPHONE
    Text: K596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information


    Original     		PDF STK596M O-92M KST-I017-001 K596 K596 b 01 STK596M CAPACITOR MICROPHONE

    gas filled voltage regulator

    Abstract: CK5962 corona discharge circuit CK596 RAYTHEON Raytheon Company
    Text: TECHNICAL IN FO R M AT IO N Ç The C K5962 is a c o ld Æ -C -e . GAS - FILLED DIODE TYPE J-L K5962 c a th o d e , c o r o n a • d is c h a rg e tu b e o f m in ia tu r e c o n s tr u c tio n , s im ila r to th e B u re a u o f S h ip s ty p e B S - 1 0 1 , d e s ig n e d fo r use as a v o lta g e re g u la to r in h ig h - v o lta n e , lo w c u rre n t


    OCR Scan     		PDF CK5962 CK5962 BS-101, 25/Xa. gas filled voltage regulator corona discharge circuit CK596 RAYTHEON Raytheon Company

    Untitled

    Abstract: No abstract text available
    Text: PLIOTRON DESCRIPTION T h e 880 is a three-electrode power tube designed for use as a radio-frequency amplifier, oscillator, or Class B m odulator. T he plate is water-cooled and is capable of dissipating 12 to 20 kilow atts, T he design of the term inal m ount connections and


    OCR Scan     		PDF K-8074621 32-32DIA. 032-DIA. GL-880

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


    OCR Scan     		PDF 2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460