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ATC100B101JP500XT Price and Stock

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Kyocera AVX Components 100B101JP500XT Silicon RF Capacitors / Thin Film 500volts 100pF 5%
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Mouser Electronics	100B101JP500XT					1 $7.43 10 $5.75 100 $4.61 1000 $3.85 10000 $3.85	Get Quote
American Technical Ceramics Corp ATC100B101JP500XT CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.0001 UF, SURFACE MOUNT
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Quest Components	ATC100B101JP500XT		230			1 $5.94 10 $5.94 100 $2.772 1000 $2.574 10000 $2.574	Buy Now
	ATC100B101JP500XT		230			1 $5.94 10 $5.94 100 $2.772 1000 $2.574 10000 $2.574	Buy Now

ATC100B101JP500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ATC100A101JP150 Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14	PDF
ATC100B102JP50XT Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with	Original	MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with	Original	MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3	PDF
ATC600F1R8BT250XT Abstract: ATC600F220JT250XT lte reference design ATC100A100JP150X MMG3014N ATC200B393KP50XT ATC100A101JP150X Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically	Original	74claims, MMG3014N MRFG35010AN ATC600F1R8BT250XT ATC600F220JT250XT lte reference design ATC100A100JP150X ATC200B393KP50XT ATC100A101JP150X	PDF
Chemi-Con DATE CODES Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with	Original	MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 Chemi-Con DATE CODES chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 Nippon chemi	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Available at http://freescale.com/RFMMIC > Design Support > Reference Designs Rev. 0, 2/2012 RF Power Reference Design LTE 750 MHz Power Amplifier Lineup InGaP HBT Driving GaAs pHEMT Amplifier Lineup Characteristics This reference design provides a high-gain amplifier solution, specifically	Original	MMG3014N MRFG35010AN	PDF
RO4350B Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B	PDF
nippon capacitors Abstract: Nippon chemi Text: Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with	Original	MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220H MRF6P9220HR3 MRF6P9220H nippon capacitors Nippon chemi	PDF