Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Z11 MARKING CODE Search Results

    Z11 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    Z11 MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Zener Diodes 350mW Zener Voltage @ IZT Marking Code Part No. MMBZ4695 MMBZ4696 MMBZ4697 MMBZ4698 MMBZ4699 MMBZ4700 MMBZ4701 MMBZ4702 MMBZ4703 MMBZ4704 MMBZ4705 MMBZ4706 MMBZ4707 MMBZ4708 MMBZ4709 MMBZ4710 MMBZ4711 MMBZ4712 MMBZ4713 MMBZ4714 MMBZ4715


    Original     		PDF 350mW MMBZ4617 MMBZ4618 MMBZ4619 MMBZ4620 MMBZ4621 MMBZ4622 MMBZ4623

    Untitled

    Abstract: No abstract text available
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


    Original     		PDF TQM8M9074 20-pin

    TQM8M9074

    Abstract: Z11 Marking Code
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


    Original     		PDF TQM8M9074 20-pin TQM8M9074 Z11 Marking Code

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6

    transistor MARKING NC KRC

    Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    Z921

    Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130EU AGR09130EF Z921 transistor MARKING NC KRC MOSFET 930 06 ng

    BZX84 X8

    Abstract: SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3
    Text: BZX84C2V4 . BZX84C47 300 mW BZX84C2V4 . BZX84C47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2009-01-28 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 300 mW Repetitive peak reverse voltage


    Original     		PDF BZX84C2V4 BZX84C47 OT-23 O-236) UL94V-0 Y14/Z9 Y15/A0 Y16/B0 BZX84 X8 SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3

    Untitled

    Abstract: No abstract text available
    Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram


    Original     		PDF TQM8M9079 20-pin

    Z11 Marking Code

    Abstract: No abstract text available
    Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram


    Original     		PDF TQM8M9079 20-pin TQM8M9079 Z11 Marking Code

    Z11 Marking Code

    Abstract: No abstract text available
    Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications •    Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features         Functional Block Diagram


    Original     		PDF TQM8M9079 20-pin TQM8M9079 Z11 Marking Code

    ZENER DIODE z91

    Abstract: Willas Z68 diode Z47 z39 marking DIODE z91
    Text: WILLAS ZS4728A THRU ZS4764A 1WATT SURFACE MOUNT ZENER DIODE SMA-LS PACKAGE Pb Free Product FEATURES * Low profile package * Small size * Low inductance * High temperature soldering : 260°C /10 seconds at terminals 0.196 4.9 0.180(4.5) 0.012(0.3) Typ. * RoHS product for packing code suffix "G"


    Original     		PDF ZS4728A ZS4764A MIL-STD-202 ZENER DIODE z91 Willas Z68 diode Z47 z39 marking DIODE z91

    Untitled

    Abstract: No abstract text available
    Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • • • • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features • • • • • • • • Functional Block Diagram


    Original     		PDF TQM8M9079 20-pin

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915NR2 MHVIC915NR2

    J40-5

    Abstract: FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915NR2 MHVIC915NR2 J40-5 FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 IS-95 MHVIC915R2

    GRM40X7R103J050BD

    Abstract: J422 RM73B2AT104J j392 FET J134
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 IS-95 MHVIC915R2 GRM40X7R103J050BD J422 RM73B2AT104J j392 FET J134

    Murata grm40

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 MHVIC915R2 Murata grm40

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915NR2 IS-95 MHVIC915NR2

    MW5IC2030NBR1

    Abstract: A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 8, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original     		PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1 A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2

    J703

    Abstract: No abstract text available
    Text: Document Number: MHVIC915R2 Rev. 8, 8/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to


    Original     		PDF MHVIC915R2 J703

    marking J6 transistors

    Abstract: J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 8, 8/2006 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to


    Original     		PDF MHVIC915R2 marking J6 transistors J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115

    z15 Diode glass

    Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
    Text: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren


    Original     		PDF BZD27C DO219AA) C200P z15 Diode glass zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING

    PXTA14

    Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
    Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.


    OCR Scan     		PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401