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    600S1R8AT Search Results

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    600S1R8AT Price and Stock

    Kyocera AVX Components 600S1R8AT250XT

    CAP CER 1.8PF 250V C0G/NP0 0603
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    DigiKey 600S1R8AT250XT Cut Tape 5,046 1
    • 1 $1.81
    • 10 $1.359
    • 100 $1.016
    • 1000 $0.7155
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    600S1R8AT250XT Digi-Reel 1
    • 1 $1.81
    • 10 $1.359
    • 100 $1.016
    • 1000 $0.7155
    • 10000 $0.7155
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    600S1R8AT250XT Reel 4,000
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    Mouser Electronics 600S1R8AT250XT 800
    • 1 $1.81
    • 10 $1.25
    • 100 $1.02
    • 1000 $0.725
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    Richardson RFPD 600S1R8AT250XT 1,000
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    • 1000 $0.59
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    Kyocera AVX Components 600S1R8AT250T

    Silicon RF Capacitors / Thin Film 250V 1.8pF Tol 0.05pF
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    Mouser Electronics 600S1R8AT250T
    • 1 $1.88
    • 10 $1.41
    • 100 $1.06
    • 1000 $0.74
    • 10000 $0.629
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    Richardson RFPD 600S1R8AT250T 1,000 1,000
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    • 10000 $0.38
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    Kyocera AVX Components 600S1R8AT250TV

    Silicon RF Capacitors / Thin Film 250V 1.8pF Tol .05pF Vertical
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    Mouser Electronics 600S1R8AT250TV
    • 1 $1.79
    • 10 $1.34
    • 100 $1.01
    • 1000 $0.704
    • 10000 $0.599
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    Kyocera AVX Components 600S1R8ATN250T

    Silicon RF Capacitors / Thin Film 250V 1.8pF Tol 0.05pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600S1R8ATN250T
    • 1 $1.88
    • 10 $1.41
    • 100 $1.06
    • 1000 $0.74
    • 10000 $0.629
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    Kyocera AVX Components 600S1R8AT250XTV

    Silicon RF Capacitors / Thin Film 250V 1.8pF Tol 0.05pF Las Mkg Vertical
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    Mouser Electronics 600S1R8AT250XTV
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    • 1000 $0.74
    • 10000 $0.629
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    600S1R8AT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    600S1R8AT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 1.8PF 250V NP0 0603 Original PDF

    600S1R8AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original
    PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1

    600S3R9AT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW5IC2030M Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS


    Original
    PDF MW5IC2030M MW5IC2030 IS-95 MW5IC2030NBR1 MW5IC2030GNBR1 MW5IC2030MBR1 MW5IC2030GMBR1 600S3R9AT

    IC 406

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC


    Original
    PDF MW5IC2030M/D MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 IC 406

    A113

    Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030M MW5IC2030MBR1 MW5IC2030NBR1 600s3r9at
    Text: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original
    PDF MW5IC2030M MW5IC2030NBR1 MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 A113 AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030M 600s3r9at

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original
    PDF MW5IC2030M MW5IC2030NBR1 MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip


    Original
    PDF MW5IC2030 885load* MW5IC2030MBR1 MW5IC2030GMBR1

    600S3R9AT

    Abstract: GRM-215 Marking Z7 Gate Driver MOTOROLA LOT MARKINGS A113 AN1955 AN1987 MW5IC2030GNBR1 MW5IC2030NBR1 600S2R2AT
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 7, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original
    PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1 600S3R9AT GRM-215 Marking Z7 Gate Driver MOTOROLA LOT MARKINGS A113 AN1955 AN1987 MW5IC2030GNBR1 600S2R2AT

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original
    PDF T1G4020036-FL T1G4020036-FL

    GF 215

    Abstract: W1900
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC2030M Rev. 5, 6/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS


    Original
    PDF MW5IC2030M MW5IC2030 MW5IC2030NBR1 MW5IC2030GNBR1 MW5IC2030MBR1 MW5IC2030GMBR1 MW5IC2030M GF 215 W1900

    A113

    Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1
    Text: MOTOROLA Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC


    Original
    PDF MW5IC2030M/D MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 A113 AN1955 AN1987 MW5IC2030GMBR1

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original
    PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original
    PDF T1G4020036-FL T1G4020036-FL

    MW5IC2030NBR1

    Abstract: A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 8, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original
    PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1 A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original
    PDF T1G4020036-FS T1G4020036-FS