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    100B1R5BW Price and Stock

    Kyocera AVX Components 100B1R5BW500XT1K

    CAP CER 1.5PF 500V P90 1111
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    DigiKey 100B1R5BW500XT1K Cut Tape 6,208 1
    • 1 $6.76
    • 10 $5.859
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    100B1R5BW500XT1K Reel 3,000 1,000
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    100B1R5BW500XT1K Digi-Reel 1
    • 1 $6.76
    • 10 $5.859
    • 100 $4.5667
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    Mouser Electronics 100B1R5BW500XT1K
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    Richardson RFPD 100B1R5BW500XT1K 1,000
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    Kyocera AVX Components 100B1R5BW500XT

    Silicon RF Capacitors / Thin Film 500volts 1.5pF
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    Mouser Electronics 100B1R5BW500XT 903
    • 1 $4.54
    • 10 $3.91
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    TTI 100B1R5BW500XT Reel 500
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    Richardson RFPD 100B1R5BW500XT 500
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    Chip1Stop 100B1R5BW500XT 1,500
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    Kyocera AVX Components 100B1R5BW500XC100

    Silicon RF Capacitors / Thin Film 500V 1.5pF Tol 0.1pF Las Mkg
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    Mouser Electronics 100B1R5BW500XC100 62
    • 1 $6.65
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    Richardson RFPD 100B1R5BW500XC100 206 100
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    Kyocera AVX Components 100B1R5BWN500XC100

    Silicon RF Capacitors / Thin Film 500V 1.5pF Tol 0.1pF Las Mkg
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    Mouser Electronics 100B1R5BWN500XC100
    • 1 $7.63
    • 10 $6.62
    • 100 $5.08
    • 1000 $4.32
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    Kyocera AVX Components 100B1R5BW1000XT

    Silicon RF Capacitors / Thin Film
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    Mouser Electronics 100B1R5BW1000XT
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    Richardson RFPD 100B1R5BW1000XT 1
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    Find more 100B1R5BW price and stock on Findchips.com

    100B1R5BW Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B1R5BW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 1.5PF 500V P90 1111 Original PDF
    100B1R5BW500XT1K American Technical Ceramics Ceramic Capacitor 1.5PF 500V P90 1111 Original PDF

    100B1R5BW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


    Original     		PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    MRF5S21045N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N

    0805 capacitor 10 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.


    Original     		PDF MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    MRF9080LSR3

    Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522

    A113

    Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1


    Original     		PDF MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 A113 AN1955 MRF5S19060MBR1

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S18060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1

    MRF5S21045N

    Abstract: No abstract text available
    Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045N

    IM324

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N IM324

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    AGR09130E

    Abstract: AGR09130EF AGR09130EU JESD22-C101A
    Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A

    733W

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W

    J5001

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001

    RM73B2B

    Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A
    Text: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E DS04-154RFPP DS04-030RFPP) RM73B2B gl 3201 AGR09130EF AGR09130EU JESD22-C101A

    100B1R0BW

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 MRF5S19060MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1 100B1R0BW A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1

    J4-89

    Abstract: J534
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534