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Kyocera AVX Components 100B1R5BW500XT1K CAP CER 1.5PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B1R5BW500XT1K	Digi-Reel	9,121		1	1 $8.81 10 $6.132 100 $4.706 1000 $4.12556 10000 $4.12556	Buy Now
	100B1R5BW500XT1K	Cut Tape	9,121		1	1 $8.81 10 $6.132 100 $4.706 1000 $4.12556 10000 $4.12556	Buy Now
	100B1R5BW500XT1K	Reel	3,000		1,000	1 - 10 - 100 - 1000 $3.9439 10000 $3.79339	Buy Now
Avnet Americas	100B1R5BW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R5BW500XT1K					1 - 10 - 100 - 1000 $3.47 10000 $3.37	Get Quote
Richardson RFPD	100B1R5BW500XT1K				1,000	1 - 10 - 100 - 1000 $2.21 10000 $1.72	Buy Now
Kyocera AVX Components 100B1R5BW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R5BW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R5BW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R5BW500XT		995			1 $4.54 10 $3.91 100 $3.78 1000 $3.2 10000 $3.2	Buy Now
TTI	100B1R5BW500XT	Reel			500	1 - 10 - 100 - 1000 $2.94 10000 $2.94	Buy Now
Richardson RFPD	100B1R5BW500XT				500	1 - 10 - 100 - 1000 $2.21 10000 $1.72	Buy Now
Kyocera AVX Components 100B1R5BW500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R5BW500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R5BW500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R5BW500XTV					1 - 10 - 100 - 1000 $3.8 10000 $3.8	Get Quote
TTI	100B1R5BW500XTV	Reel			500	1 - 10 - 100 - 1000 $3.76 10000 $3.76	Buy Now
Kyocera AVX Components 100B1R5BW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B1R5BW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R5BW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R5BW500XC100		78			1 $6.65 10 $5.77 100 $4.43 1000 $3.76 10000 $3.69	Buy Now
Richardson RFPD	100B1R5BW500XC100		206		100	1 - 10 - 100 $3.57 1000 $2.16 10000 $1.69	Buy Now
Kyocera AVX Components 100B1R5BW1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B1R5BW1500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B1R5BW1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B1R5BW1500XT					1 - 10 - 100 - 1000 $3.29 10000 $3.29	Get Quote
TTI	100B1R5BW1500XT	Reel			500	1 - 10 - 100 - 1000 $2.94 10000 $2.94	Buy Now

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100B1R5BW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B1R5BW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1.5PF 500V P90 1111		Original	PDF
100B1R5BW500XT1K		American Technical Ceramics	Ceramic Capacitor 1.5PF 500V P90 1111		Original	PDF

100B1R5BW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
A113 Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1	PDF
J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS	PDF
ipc 9850 Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1	PDF
MRF5S21045N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N	PDF
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801	PDF
MRF9080LSR3 Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522	PDF
A113 Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1	Original	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 A113 AN1955 MRF5S19060MBR1	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF

Untitled Abstract: No abstract text available Text: Document Number: MRF6S18060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1	PDF
MRF5S21045N Abstract: No abstract text available Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045N	PDF
IM324 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N IM324	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
AGR09130E Abstract: AGR09130EF AGR09130EU JESD22-C101A Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A	PDF
733W Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with	Original	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W	PDF
J5001 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001	PDF
RM73B2B Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A Text: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130E DS04-154RFPP DS04-030RFPP) RM73B2B gl 3201 AGR09130EF AGR09130EU JESD22-C101A	PDF
100B1R0BW Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 MRF5S19060MR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1 100B1R0BW A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1	PDF
J4-89 Abstract: J534 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534	PDF

100B1R5BW Search Results

100B1R5BW Price and Stock

Kyocera AVX Components 100B1R5BW500XT1K

Kyocera AVX Components 100B1R5BW500XT

Kyocera AVX Components 100B1R5BW500XTV

Kyocera AVX Components 100B1R5BW500XC100

Kyocera AVX Components 100B1R5BW1500XT

100B1R5BW Datasheets (2)

100B1R5BW Datasheets Context Search

Untitled

A113

J294

ipc 9850

Untitled

marking WB1 sot-23

MRF5S21045N

Untitled

0805 capacitor 10 pf

PTFB090901EA

PTFB090901

MRF9080LSR3

A113

PTFB090901EA

Untitled

MRF5S21045N

IM324

2a258 transistor

AGR09130E

733W

J5001

RM73B2B

100B1R0BW

J4-89