AGR09130EU Search Results

AGR09130EU Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
AGR09130EU		Agere Systems	130 W, 921 MHz - 960 MHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR09130EU		Agere Systems	FET Transistor, 130W, 921MHz-960MHz, N-Channel E-Mode, Lateral MOSFET Transistor		Original	PDF

AGR09130EU Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor MARKING NC KRC Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
AGR09130E Abstract: AGR09130EF AGR09130EU JESD22-C101A Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A
RM73B2B Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A Text: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09130E Hz--960 AGR09130E DS04-154RFPP DS04-030RFPP) RM73B2B gl 3201 AGR09130EF AGR09130EU JESD22-C101A
WZ150 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09130E Hz--960 DS03-151RFPP WZ150
Z921 Abstract: transistor MARKING NC KRC MOSFET 930 06 ng Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09130E Hz--960 AGR09130EU AGR09130EF Z921 transistor MARKING NC KRC MOSFET 930 06 ng
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Untitled Abstract: No abstract text available Text: Preliminary Product Brief July 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	PDF	AGR09130E AGR09130E capabl0-712-4106) PB03-155RFPP