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    Z10B Search Results

    Z10B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Z10B Shenzhen Yongerjia Electronic Zener Diode Original PDF
    SF Impression Pixel

    Z10B Price and Stock

    Vishay Semiconductors PLZ10B-HG3_A/H

    DIODE ZENER 10V 500MW DO219AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PLZ10B-HG3_A/H Reel 22,500 4,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.04533
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    Nexperia PDZ10BF

    DIODE ZENER 10.21V 400MW SOD323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PDZ10BF Cut Tape 9,962 1
    • 1 $0.2
    • 10 $0.143
    • 100 $0.0772
    • 1000 $0.04212
    • 10000 $0.03299
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    Rochester Electronics PDZ10BF 10,000 1
    • 1 $0.023
    • 10 $0.023
    • 100 $0.0216
    • 1000 $0.0195
    • 10000 $0.0195
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    Vishay Semiconductors GDZ10B-G3-18

    DIODE ZENER 10V 200MW SOD323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GDZ10B-G3-18 Cut Tape 9,690 1
    • 1 $0.33
    • 10 $0.225
    • 100 $0.1098
    • 1000 $0.06361
    • 10000 $0.05114
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    Nexperia PDZ10B,115

    DIODE ZENER 10V 400MW SOD323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PDZ10B,115 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.02586
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    Mouser Electronics PDZ10B,115 24,331
    • 1 $0.19
    • 10 $0.123
    • 100 $0.055
    • 1000 $0.039
    • 10000 $0.024
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    Rochester Electronics PDZ10B,115 369,000 1
    • 1 $0.023
    • 10 $0.023
    • 100 $0.0216
    • 1000 $0.0195
    • 10000 $0.0195
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    TTI PDZ10B,115 Reel 840,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0163
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    TME PDZ10B,115 3,375 25
    • 1 -
    • 10 -
    • 100 $0.038
    • 1000 $0.0319
    • 10000 $0.0288
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    Nexperia PDZ10BGWX

    DIODE ZENER 10V 365MW SOD123
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PDZ10BGWX Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0301
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    PDZ10BGWX Cut Tape 2,584 1
    • 1 $0.22
    • 10 $0.153
    • 100 $0.0828
    • 1000 $0.04515
    • 10000 $0.04515
    		Buy Now
    Avnet Americas PDZ10BGWX Reel 8 Weeks 45,000
    • 1 -
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    • 10000 -
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    Mouser Electronics PDZ10BGWX 7,605
    • 1 $0.22
    • 10 $0.153
    • 100 $0.065
    • 1000 $0.046
    • 10000 $0.03
    		Buy Now
    Rochester Electronics PDZ10BGWX 243,000 1
    • 1 $0.023
    • 10 $0.023
    • 100 $0.0216
    • 1000 $0.0195
    • 10000 $0.0195
    		Buy Now
    TME PDZ10BGWX 2,195 20
    • 1 -
    • 10 -
    • 100 $0.0342
    • 1000 $0.0308
    • 10000 $0.0272
    		Buy Now
    Avnet Asia PDZ10BGWX 42,000 8 Weeks 3,000
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    Find more Z10B price and stock on Findchips.com

    Z10B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Z14b

    Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B

    z18a

    Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
    Text: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)


    Original     		PDF GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 300K/W z18a Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A

    Z18B

    Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original     		PDF GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 500mW 300K/W Z18B z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B

    Z18B

    Abstract: Z33B Z36B Z15B Z30B Z5.1B zener diode z39b Z4.7B Z24B Z5.6B
    Text: MCC TM Micro Commercial Components PTZ3.6B THRU PTZ36B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Small surface mounting type. Voltage regulation and voltage limiting


    Original     		PDF PTZ36B DO-214AC Z18B Z33B Z36B Z15B Z30B Z5.1B zener diode z39b Z4.7B Z24B Z5.6B

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 28rola,

    z14b

    Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A

    RO3010

    Abstract: C14A z14b
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374/D MRF374 MRF374/D RO3010 C14A z14b

    zener gdzj marking

    Abstract: zener gdzj
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives


    Original     		PDF GDZJ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdzj marking zener gdzj

    SNP-Z101

    Abstract: SNP-Z103 SNP-Z109 Z109 snp-z107 Z107 SNP-Z10T Z103 SNP-Z10 SNPZ10
    Text: General Purpose Universal PFC + 100W SNP-Z10 Series Description: Open frame size of 3" X 5" has become an industrial standard for more than 10 years. The power density is around 2.0 watts/ cu.in. at very beginning and then stays at 3.0 watts/cu.in. for a


    Original     		PDF SNP-Z10 SNPZ10 SNP-Z106 V/20A SNP-Z107 SNP-Z108 SNP-Z109 SNP-Z10T SNP-Z101 SNP-Z103 Z109 Z107 Z103

    IR TK 2836

    Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		PDF GDZJ56 DO-35 500mW MIL-STD-202G, DO-35 500mW 300K/W IR TK 2836 zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2

    z6c8

    Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original     		PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 z6c8 Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b

    marking 6a2 smd

    Abstract: zener Z11B
    Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C


    Original     		PDF 500mW 94Leakage marking 6a2 smd zener Z11B

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901

    Vj3640Y

    Abstract: transistor L1A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374/D MRF374 Vj3640Y transistor L1A

    Z18B

    Abstract: z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2
    Text: WILLAS DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		PDF GDZJ56 DO-35 500mW MIL-STD-202, DO-35 Z18B z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2

    zener diode z15c

    Abstract: diode z6A2 Z18B Z5B6 z6c8
    Text: GDZJ2.0~GDZJ56 PB FREE PRODUCT AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		PDF GDZJ56 DO-35 500mW MIL-STD-202, DO-35 MAXIM00mW 300K/W zener diode z15c diode z6A2 Z18B Z5B6 z6c8

    C13B

    Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 C13B z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w

    Z22A

    Abstract: Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b
    Text: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 Z22A Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b

    IR TK 2836

    Abstract: z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b
    Text: GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE FEATURES DO-34 • Planar die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability


    Original     		PDF 500mW DO-34 2002/95/EC MIL-STD-202G, 500mW 300K/W IR TK 2836 z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b

    KMZ10B

    Abstract: Magnetic Field Sensor MLC716 magnetic sensor circuit diagram MGD802 Thin-film magnetic resistance SOT195 MAGNETIC PROXIMITY SENSOR application note MSA927 msa-927
    Text: Philips Semiconductors Product specification Magnetic field sensor Z10B DESCRIPTION The K M Z10B is a sensitive m agnetic field sensor, em ploying the m agnetoresistive effect of thin-film perm alloy. Its properties enable this sensor to be used in a w ide range of applications fo r current and field


    OCR Scan     		PDF KMZ10B KMZ10B Magnetic Field Sensor MLC716 magnetic sensor circuit diagram MGD802 Thin-film magnetic resistance SOT195 MAGNETIC PROXIMITY SENSOR application note MSA927 msa-927

    M80062

    Abstract: kmz110b Sm2CO17 scale sensor lte in philips philips hybrid "Angle Sensor" KMZ10B KMZ11B1 HYBRID SEMICONDUCTORS
    Text: N AMER P H I L I P S / D I S C R E T E b^E T> bbS3T31 0 0 3 2 7 0 M TÔT H A P X Philips Semiconductors Preliminary specification A n g le s e n s o r hybrid circu it K M 110B H /22 70 P IN N IN G F EA TU R E S • Angle measuring range 70° PIN • Contactless, therefore wear-free and no micro-linearity


    OCR Scan     		PDF 003270M KM110BH/2270 KMZ10B KMZ110BH/2270 M80062 kmz110b Sm2CO17 scale sensor lte in philips philips hybrid "Angle Sensor" KMZ11B1 HYBRID SEMICONDUCTORS

    philips kty87

    Abstract: KTY87-205
    Text: 119 Sensors, Thermistors, Varistors Temperature Sensors cont. Sensor Accuracy (ft) at Tamb (X) (X) (X) Sensor Current (mA) 1000 to 1050 25 ± 4.0 100 2 - 4 0 to 125 990 to 1010 25 ±1.3 25 1 - 4 0 to 125 980 to 1020 25 ±2.6 25 1 25 1 Package Outline Temperature


    OCR Scan     		PDF KTY85-120 KTY85-121 KTY85-122 110BH philips kty87 KTY87-205

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Magnetic field sensor Z10B DESCRIPTION The KMZ1 OB is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field


    OCR Scan     		PDF KMZ10B OT195)