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    Z33B Search Results

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    Z33B Price and Stock

    Rochester Electronics LLC HZ33BPTK-E

    DIODE ZENER
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    DigiKey HZ33BPTK-E Bulk 66,074 1,623
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    MOSLEADER RLZ33B-ML

    LL34 Commercial Grade
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    DigiKey RLZ33B-ML Reel 30,000 250
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    MOSLEADER RLZ3.3B-ML

    LL34 Commercial Grade
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    DigiKey RLZ3.3B-ML Reel 30,000 250
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    Nexperia PDZ33BF

    DIODE ZENER 32.97V 400MW SOD323
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    DigiKey PDZ33BF Reel 10,000 10,000
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    Mouser Electronics PDZ33BF
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    TTI PDZ33BF Reel 30,000
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    Nexperia PDZ3.3BGWJ

    DIODE ZENER 3.3V 365MW SOD123
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    DigiKey PDZ3.3BGWJ Cut Tape 9,776 1
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    Avnet Americas PDZ3.3BGWJ Reel 8 Weeks 50,000
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    Rochester Electronics PDZ3.3BGWJ 20,000 1
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    Z33B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Z33B Shenzhen Yongerjia Electronic Zener Diode Original PDF

    Z33B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R1513S Series AEC-Q100 Grade 1 Certified 36 V, 0.8% Accuracy, 300 mA, Voltage Regulator for Automotive Applications NO.EC-321-140124 OUTLINE The R1513S is a CMOS-based voltage regulator VR that specifically designed for automotive applications featuring 300 mA output current and 36 V input voltage. Internally, the R1513S consists of a fold-back protection


    Original
    PDF R1513S AEC-Q100 EC-321-140124 Room403, Room109, 10F-1,

    z18a

    Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
    Text: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)


    Original
    PDF GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 300K/W z18a Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A

    Z18B

    Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original
    PDF GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 500mW 300K/W Z18B z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B

    Z18B

    Abstract: Z33B Z36B Z15B Z30B Z5.1B zener diode z39b Z4.7B Z24B Z5.6B
    Text: MCC TM Micro Commercial Components PTZ3.6B THRU PTZ36B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Small surface mounting type. Voltage regulation and voltage limiting


    Original
    PDF PTZ36B DO-214AC Z18B Z33B Z36B Z15B Z30B Z5.1B zener diode z39b Z4.7B Z24B Z5.6B

    zener gdzj marking

    Abstract: zener gdzj
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives


    Original
    PDF GDZJ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdzj marking zener gdzj

    IR TK 2836

    Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original
    PDF GDZJ56 DO-35 500mW MIL-STD-202G, DO-35 500mW 300K/W IR TK 2836 zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2

    z6c8

    Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original
    PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 z6c8 Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b

    marking 6a2 smd

    Abstract: zener Z11B
    Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C


    Original
    PDF 500mW 94Leakage marking 6a2 smd zener Z11B

    z9b1

    Abstract: Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original
    PDF GDZJ56 DO-35 500mW MIL-STD-202, DO-35 z9b1 Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D

    Z18B

    Abstract: z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2
    Text: WILLAS DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original
    PDF GDZJ56 DO-35 500mW MIL-STD-202, DO-35 Z18B z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2

    zener diode z15c

    Abstract: diode z6A2 Z18B Z5B6 z6c8
    Text: GDZJ2.0~GDZJ56 PB FREE PRODUCT AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original
    PDF GDZJ56 DO-35 500mW MIL-STD-202, DO-35 MAXIM00mW 300K/W zener diode z15c diode z6A2 Z18B Z5B6 z6c8

    Z22A

    Abstract: Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b
    Text: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives


    Original
    PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 Z22A Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b

    IR TK 2836

    Abstract: z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b
    Text: GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE FEATURES DO-34 • Planar die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability


    Original
    PDF 500mW DO-34 2002/95/EC MIL-STD-202G, 500mW 300K/W IR TK 2836 z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b

    z18a

    Abstract: Z22C Z15C Z22A Z30C Z27D Z10C z6c8 z15a Z15B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original
    PDF GLZJ56 MINI-MELF/LL-34 500mW 2002/95/EC MIL-STD-750, z18a Z22C Z15C Z22A Z30C Z27D Z10C z6c8 z15a Z15B

    z10b

    Abstract: Z6A2 Z13B z6c8 Z18B zener z27b Z30C 51a zener Z16B z15a
    Text: GLZJ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.020(0.5) 0.012(0.3)


    Original
    PDF 500mW 2002/95/EC MIL-STD-750, 2012-REV RB500V-40 z10b Z6A2 Z13B z6c8 Z18B zener z27b Z30C 51a zener Z16B z15a

    Untitled

    Abstract: No abstract text available
    Text: R1513S SERIES AEC-Q100 Grade 1 Certified 36 V, 0.8% Accuracy, 300 mA, Voltage Regulator for Automotive Applications NO.EC-321-131115 OUTLINE The R1513S is a CMOS-based voltage regulator VR that specifically designed for automotive applications featuring 300 mA output current and 36 V input voltage. Internally, the R1513S consists of a fold-back protection


    Original
    PDF R1513S AEC-Q100 EC-321-131115 Room403, Room109, 10F-1,

    Untitled

    Abstract: No abstract text available
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original
    PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40

    Z33A

    Abstract: Z16B Z6b8 Z6A2 zener z5B6
    Text: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives


    Original
    PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 Z33A Z16B Z6b8 Z6A2 zener z5B6

    Z6b8

    Abstract: zener Z11B zener z27b Z12C gd 241 c Z6A2 Z27D
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes MECHANICAL DATA


    Original
    PDF GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 Z6b8 zener Z11B zener z27b Z12C gd 241 c Z6A2 Z27D

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan
    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan
    PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p