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    MGD806

    Abstract: KMZ10B MGD802 SOT195 MLC716 SC17 ka band sensor MGD803
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D329 KMZ10B Magnetic field sensor Product specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1998 Mar 31 Philips Semiconductors Product specification Magnetic field sensor


    Original     		PDF M3D329 KMZ10B KMZ10B SCA58 115106/00/03/pp8 MGD806 MGD802 SOT195 MLC716 SC17 ka band sensor MGD803

    KMZ10A application note

    Abstract: KMZ10B KMZ10A SCA52 MLC716 SC17 MGD802 circuit 4466 permalloy 48
    Text: DISCRETE SEMICONDUCTORS DATA SHEET KMZ10A Magnetic field sensor Preliminary specification Supersedes data of November 1994 File under Discrete Semiconductors, SC17 1996 Nov 08 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ10A DESCRIPTION


    Original     		PDF KMZ10A KMZ10A SCA52 147021/1200/02/pp8 KMZ10A application note KMZ10B SCA52 MLC716 SC17 MGD802 circuit 4466 permalloy 48

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION The KMZ1 OB is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field


    OCR Scan     		PDF KMZ10B OT195)