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    Z10 MARKING Search Results

    Z10 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    Z10 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RoHS PRECISION - NIKKOHM RADIAL LEADS METAL FILM RESISTORS RP-84, RP-44, RP-24, RP-14 Features and Applications Radial leaded 1/8W-1/4W-1/2W-1W rating and up to 25ppm/K, 0.1% absolute in series. Precision Ni-Cr thin film resistors, applicable in general use.


    Original     		PDF RP-84, RP-44, RP-24, RP-14 25ppm/K,

    philips ph 116 capacitors

    Abstract: Philips electrolytic 116 Philips capacitor 116 mbc182 philips ELECTROLYTIC capacitors RLL116 RML MARKING CODE Z100 philips 116 capacitors 116 RLL capacitors
    Text: Philips Components Product specification Non-solid Al - electrolytic capacitors Radial Long Life RLL 116 FEATURES • Polarized aluminium electrolytic capacitors, non-solid handbook, 4 columns • Radial leads, cylindrical aluminium case, all-insulated light blue


    Original     		PDF MAM074 philips ph 116 capacitors Philips electrolytic 116 Philips capacitor 116 mbc182 philips ELECTROLYTIC capacitors RLL116 RML MARKING CODE Z100 philips 116 capacitors 116 RLL capacitors

    MBC182

    Abstract: 116 RLL capacitors 116 RLL
    Text: BCcomponents DATA SHEET 116 RLL Aluminum electrolytic capacitors Radial Long Life Product specification Supersedes data of January 1998 File under BCcomponents, BC01 2000 Jan 18 BCcomponents Product specification Aluminum electrolytic capacitors Radial Long Life


    Original     		PDF CCC161 EN130300 MBC182 116 RLL capacitors 116 RLL

    philips ph 116 capacitors

    Abstract: philips ph 116 capacitor Philips electrolytic 116 MBC182 philips 116 capacitors Philips capacitor 116 MGB146 philips ELECTROLYTIC capacitors philips ELECTROLYTIC capacitors marking code group RML MARKING CODE
    Text: Philips Components Product specification Aluminium electrolytic capacitors Radial Long Life 116 RLL FEATURES • Polarized aluminium electrolytic capacitors, non-solid handbook, 4 columns • Radial leads, cylindrical aluminium case, all-insulated light blue


    Original     		PDF MAM074 philips ph 116 capacitors philips ph 116 capacitor Philips electrolytic 116 MBC182 philips 116 capacitors Philips capacitor 116 MGB146 philips ELECTROLYTIC capacitors philips ELECTROLYTIC capacitors marking code group RML MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


    Original     		PDF TQM8M9074 20-pin

    RO4350B

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B

    TQM8M9074

    Abstract: Z11 Marking Code
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


    Original     		PDF TQM8M9074 20-pin TQM8M9074 Z11 Marking Code

    variable resistor 500

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001 MW4IC001NR4 MW4IC001MR4 variable resistor 500

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF MMRF1021N MMRF1021NT1

    100B220GW

    Abstract: 100B100GW
    Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100R3 MRF9100SR3 100B220GW 100B100GW

    Z6 3pin

    Abstract: J262 AFT09MS007NT1
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1

    J293

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s


    Original     		PDF MW4IC001N MW4IC001NR4 MW4IC001N J293

    330 j73 Tantalum Capacitor

    Abstract: 600S1 J162 600S100 100B4R7
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001 MW4IC001NR4 MW4IC001MR4 330 j73 Tantalum Capacitor 600S1 J162 600S100 100B4R7

    567 tone

    Abstract: 100B2R7CP500X 100B120JP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001NR4 RO4350 T491X226K035AS
    Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s


    Original     		PDF MW4IC001N MW4IC001NR4 MW4IC001N 567 tone 100B2R7CP500X 100B120JP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001NR4 RO4350 T491X226K035AS

    330 j73 Tantalum Capacitor

    Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    Untitled

    Abstract: No abstract text available
    Text: MW4IC001MR4 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4


    Original     		PDF MW4IC001MR4 MW4IC001NR4. MW4IC001M MW4IC001MR4

    AFT504

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS004N AFT05MS004NT1 AFT504

    MJD310

    Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
    Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282

    N/A9M07

    Abstract: No abstract text available
    Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from


    Original     		PDF AFT09MS007N AFT09MS007NT1 N/A9M07

    J293

    Abstract: IC 2703
    Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s


    Original     		PDF MW4IC001N MW4IC001NR4 MW4IC001N J293 IC 2703

    A5M0

    Abstract: IC 2 5/A5M06
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06

    M1000

    Abstract: No abstract text available
    Text: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B L A N K M A R K IN G L A B E L S — S E R IE S .B Z 2-12 C IR C U ITS D escriptio n Each pole is provided w ith 2 holes allow ing the m arking labels to be slipped on the “chim ney" tops, and w ith a m ounting hole corresponding to


    OCR Scan     		PDF M2000 M1000 1500B 2000B M1500 1500BZ12