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    600S100 Price and Stock

    Kyocera AVX Components 600S100JT250XT

    CAP CER 10PF 250V C0G/NP0 0603
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    DigiKey 600S100JT250XT Digi-Reel 15,188 1
    • 1 $1.33
    • 10 $0.829
    • 100 $0.5665
    • 1000 $0.42706
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    600S100JT250XT Cut Tape 15,188 1
    • 1 $1.33
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    600S100JT250XT Reel 12,000 4,000
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    Mouser Electronics 600S100JT250XT 22,464
    • 1 $0.94
    • 10 $0.629
    • 100 $0.552
    • 1000 $0.357
    • 10000 $0.316
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    Kyocera AVX Components 600S100GT250XT

    CAP CER 10PF 250V C0G/NP0 0603
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    DigiKey 600S100GT250XT Digi-Reel 13,351 1
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    • 100 $0.8736
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    600S100GT250XT Cut Tape 13,351 1
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    600S100GT250XT Reel 12,000 4,000
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    Mouser Electronics 600S100GT250XT 6,127
    • 1 $1.29
    • 10 $0.902
    • 100 $0.805
    • 1000 $0.654
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    Arrow Electronics 600S100GT250XT 2,500 12 Weeks 2,000
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    Richardson RFPD 600S100GT250XT 500 1,000
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    Chip1Stop 600S100GT250XT 2,500
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    Kyocera AVX Components 600S100GW250XT

    CAP CER 10PF 250V NP0 0603
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    DigiKey 600S100GW250XT Digi-Reel 8,000 1
    • 1 $1.95
    • 10 $1.248
    • 100 $0.8736
    • 1000 $0.67457
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    600S100GW250XT Reel 8,000 4,000
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    600S100GW250XT Cut Tape 8,000 1
    • 1 $1.95
    • 10 $1.248
    • 100 $0.8736
    • 1000 $0.67457
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    Mouser Electronics 600S100GW250XT 1,884
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    • 10 $0.963
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    Kyocera AVX Components 600S100FT250XT

    CAP CER 10PF 250V C0G/NP0 0603
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    DigiKey 600S100FT250XT Digi-Reel 7,503 1
    • 1 $2.68
    • 10 $1.741
    • 100 $1.2433
    • 1000 $0.97813
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    600S100FT250XT Reel 4,000 4,000
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    Mouser Electronics 600S100FT250XT 2,455
    • 1 $1.68
    • 10 $1.21
    • 100 $1.12
    • 1000 $0.909
    • 10000 $0.8
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    Arrow Electronics 600S100FT250XT 3,000 12 Weeks 2,000
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    600S100FT250XT 5 5
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    Richardson RFPD 600S100FT250XT 1,000 500
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    600S100FT250XT 10 500
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    600S100FT250XT 500
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    Avnet Abacus 600S100FT250XT 16 Weeks 12,000
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    Avnet Asia 600S100FT250XT 14 Weeks 4,000
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    Chip1Stop 600S100FT250XT 3,000
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    • 10000 $0.822
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    600S100FT250XT 10
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    600S100FT250XT 5
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    Kyocera AVX Components 600S100FW250XT

    CAP CER 10PF 250V C0G/NP0 0603
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    DigiKey 600S100FW250XT Digi-Reel 5,329 1
    • 1 $2.32
    • 10 $1.496
    • 100 $1.059
    • 1000 $0.82614
    • 10000 $0.82614
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    600S100FW250XT Cut Tape 5,329 1
    • 1 $2.32
    • 10 $1.496
    • 100 $1.059
    • 1000 $0.82614
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    Mouser Electronics 600S100FW250XT 1,368
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    • 1000 $0.815
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    Newark 600S100FW250XT Bulk 500
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    • 10000 $0.877
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    Richardson RFPD 600S100FW250XT 500
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    600S100 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    600S100FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 1% NP0 0603 Original PDF
    600S100FW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 1% NP0 0603 Original PDF
    600S100GT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 2% NP0 0603 Original PDF
    600S100GW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 2% NP0 0603 Original PDF
    600S100JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0603 Original PDF
    600S100JW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0603 Original PDF

    600S100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOF-26

    Abstract: SZP-3026Z
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1 SOF-26

    330 j73 Tantalum Capacitor

    Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1

    Aeroflex ATC 600

    Abstract: ATSC MSWSHB-020-30 RO4350B DVB-T Schematic MEST2G-020-15 mswsh-100-30 wifi antenna MSWSS-020-40 600S200JW
    Text: Application Note AN55131B Design of LOW COST High Performance 20W and 50W Transmit and Receive Antenna Switches DESCRIPTION Figure 1. This paper describes a 20 W SPDT switch for use in 500 MHz to 4 GHz wireless infrastructure applications such as cellular GSM, CDMA, 3G and


    Original     		PDF AN55131B MSWSS-020-40 MEST2G-020-15 RO4350B Aeroflex ATC 600 ATSC MSWSHB-020-30 DVB-T Schematic MEST2G-020-15 mswsh-100-30 wifi antenna MSWSS-020-40 600S200JW

    8587

    Abstract: 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
    Text: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s


    Original     		PDF MW4IC001MR4/D MW4IC001MR4 MW4IC001MR4 8587 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR RO4350 T491X226K035AS

    Untitled

    Abstract: No abstract text available
    Text: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •


    Original     		PDF TGF3020-SM TGF3020-SM

    Untitled

    Abstract: No abstract text available
    Text: T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4003532-FL T2G4003532-FL TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4004532-FS T1G4004532-FS TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier SZP-3026Z Preliminary 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1

    Untitled

    Abstract: No abstract text available
    Text: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip


    Original     		PDF SZM-2066Z SZM-2066Z 11b/g LL1608FH4N7J DS110620 LL1608FH10J SZM2066ZSQ SZM2066ZSR

    Untitled

    Abstract: No abstract text available
    Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA3026 54Mb/s 27dBm 513mA 26dBm 570mA DS120110

    dk39

    Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z bands21 DS110620 SZM2166ZSQ SZM2166ZSR SZM2166Z SZM2166ZPCK-EVB1 dk39 SZM-2166 szm2166 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic

    Untitled

    Abstract: No abstract text available
    Text: RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features     P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance POUT =26dBm at 2.5% EVM, VCC 5V POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA2226 RFPA2226 54Mb/s 26dBm 27dBm MCH185A5R6DK MCH182CN104K 600S1R6JW250

    Aeroflex ATC 600

    Abstract: 600s101 MSWSHB-020-30 600S150JW mswsh-100-30 mswsh-020-30 wifi antenna MEST2G-020-15 RO4350B 600S150J
    Text: Application Note AN55132B Design of LOW COST High Isolation 20W and 50W Transmit and Receive Antenna Switches DESCRIPTION This paper describes a high isolation 20 W transmit and receive antenna switch for use in 500 MHz to 4 GHz wireless infrastructure applications such as


    Original     		PDF AN55132B MSWSSB-020-40 MEST2G-020-15 Aeroflex ATC 600 600s101 MSWSHB-020-30 600S150JW mswsh-100-30 mswsh-020-30 wifi antenna MEST2G-020-15 RO4350B 600S150J

    Untitled

    Abstract: No abstract text available
    Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  P1dB =33.5dBm at 5V, 2.4GHz  802.11g 54Mb/s Class AB Performance


    Original     		PDF SZP-2026Z SOF-26 SZP-2026Z 54Mb/s 26dBm 27dBm SZP-2026Zâ DS110620

    variable resistor 500

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001 MW4IC001NR4 MW4IC001MR4 variable resistor 500

    SZP-3026Z

    Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z DS091202 SZP3026Z* SZP3026Z-EVB1 ma 529 SZP3026 SOF-26 3.5GHz BJT

    567 tone

    Abstract: marking us capacitor pf l1 marking Z4 100B120JP500X 100B2R7CP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001MR4
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 4, 5/2006 Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4


    Original     		PDF MW4IC001MR4 MW4IC001NR4. MW4IC001M MW4IC001MR4 567 tone marking us capacitor pf l1 marking Z4 100B120JP500X 100B2R7CP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR

    Untitled

    Abstract: No abstract text available
    Text: MW4IC001MR4 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4


    Original     		PDF MW4IC001MR4 MW4IC001NR4. MW4IC001M MW4IC001MR4

    Untitled

    Abstract: No abstract text available
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z

    Untitled

    Abstract: No abstract text available
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z DS110620 SZM2166ZSQ SZM2166ZSR SZM2166ZPCK-EVB1 SZM2166ZPCK-EVB2 SZM2166ZPCK-EVB3

    600S100JW250X

    Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SZP-3026Z SOF-26 DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z SZP3026Z-EVB1 600S100JW250X 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK

    vishay rf output power transistor

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
    Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FL T1G4003532-FL vishay rf output power transistor tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100

    transistor 2.4GHz amplifier schematic wifi

    Abstract: 600S100JW250 dk39 MCH182CN104K SZM-2166Z SZM - 238 wifi 2.4 ghz pcb layout
    Text: SZM-2166Z SZM-2166Z 2.3GHz to 2.7GHz 2W Power Amplifier 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT


    Original     		PDF SZM-2166Z SZM-2166Z applicaZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 SZM-2166Z-EVB3 EDS-105840 transistor 2.4GHz amplifier schematic wifi 600S100JW250 dk39 MCH182CN104K SZM - 238 wifi 2.4 ghz pcb layout

    Untitled

    Abstract: No abstract text available
    Text: T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4004532-FL T1G4004532-FL TQGaN25