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    Kyocera AVX Components 100B2R7CP500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100B2R7CP500XC100
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    Richardson RFPD 100B2R7CP500XC100 200
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    Kyocera AVX Components 100B2R7CP500XTV

    Silicon RF Capacitors / Thin Film 500V 2.7pF Tol 0.25pF Las Mkg Vertical
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    Kyocera AVX Components 100B2R7CP500XT

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Richardson RFPD 100B2R7CP500XT 500
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    Kyocera AVX Components 100B2R7CP500XT1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    American Technical Ceramics Corp ATC100B2R7CP500XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 9.2593% +TOL, 9.2593% -TOL, BG, 90+/-20PPM/CEL TC, 0.0000027UF, SURFACE MOUNT, 1111 (Also Known As: 100B2R7CP500XB)
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    Quest Components ATC100B2R7CP500XB 4
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    100B2R7CP500X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B2R7CP500X Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifier Original PDF

    100B2R7CP500X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    330 j73 Tantalum Capacitor

    Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    8587

    Abstract: 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
    Text: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s


    Original     		PDF MW4IC001MR4/D MW4IC001MR4 MW4IC001MR4 8587 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR RO4350 T491X226K035AS

    100B2R7CP500X

    Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3 100B2R7CP500X AN1955 MRF5S21100HSR3 MRF5S21100L

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 AN1955 CDR33BX104AKWS MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    variable resistor 500

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001 MW4IC001NR4 MW4IC001MR4 variable resistor 500

    567 tone

    Abstract: marking us capacitor pf l1 marking Z4 100B120JP500X 100B2R7CP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001MR4
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 4, 5/2006 Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4


    Original     		PDF MW4IC001MR4 MW4IC001NR4. MW4IC001M MW4IC001MR4 567 tone marking us capacitor pf l1 marking Z4 100B120JP500X 100B2R7CP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR

    Untitled

    Abstract: No abstract text available
    Text: MW4IC001MR4 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4


    Original     		PDF MW4IC001MR4 MW4IC001NR4. MW4IC001M MW4IC001MR4

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3

    100B120JP500X

    Abstract: 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a


    Original     		PDF MW4IC001MR4/D MW4IC001MR4 MW4IC001MR4 100B120JP500X 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR RO4350 T491X226K035AS

    motorola 5118

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF 84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100LR3 AN1955 CDR33BX104AKWS MRF5S21100L MRF5S21100LSR3

    ansi-y14.5m-1994

    Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100L MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 ansi-y14.5m-1994 100B2R7CP500X CDR33BX104AKWS MRF5S21100LSR3 motorola 5118

    J293

    Abstract: IC 2703
    Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s


    Original     		PDF MW4IC001N MW4IC001NR4 MW4IC001N J293 IC 2703

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s


    Original     		PDF MW4IC001MR4/D MW4IC001MR4

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s


    Original     		PDF MW4IC001MR4/D MW4IC001MR4

    J293

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s


    Original     		PDF MW4IC001N MW4IC001NR4 MW4IC001N J293

    330 j73 Tantalum Capacitor

    Abstract: 600S1 J162 600S100 100B4R7
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001 MW4IC001NR4 MW4IC001MR4 330 j73 Tantalum Capacitor 600S1 J162 600S100 100B4R7

    J327

    Abstract: 726 j68 j139
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001 MW4IC001NR4 MW4IC001MR4 J327 726 j68 j139

    567 tone

    Abstract: 100B2R7CP500X 100B120JP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001NR4 RO4350 T491X226K035AS
    Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s


    Original     		PDF MW4IC001N MW4IC001NR4 MW4IC001N 567 tone 100B2R7CP500X 100B120JP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001NR4 RO4350 T491X226K035AS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LR3 MRF5S21100LSR3