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    Kyocera AVX Components 600S101JT250XT

    CAP CER 100PF 250V C0G/NP0 0603
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    DigiKey 600S101JT250XT Digi-Reel 53,233 1
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    • 10 $1.104
    • 100 $0.7673
    • 1000 $0.58826
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    600S101JT250XT Cut Tape 53,233 1
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    600S101JT250XT Reel 52,000 4,000
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    TTI 600S101JT250XT Reel 22,000 500
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    Richardson RFPD 600S101JT250XT 2,500 1,000
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    600S101JT250XT 1,000
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    Avnet Asia 600S101JT250XT 14 Weeks 4,000
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    Kyocera AVX Components 600S180GT250XT

    CAP CER 18PF 250V C0G/NP0 0603
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    DigiKey 600S180GT250XT Digi-Reel 10,910 1
    • 1 $1.94
    • 10 $1.235
    • 100 $0.8645
    • 1000 $0.66718
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    600S180GT250XT Cut Tape 10,910 1
    • 1 $1.94
    • 10 $1.235
    • 100 $0.8645
    • 1000 $0.66718
    • 10000 $0.66718
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    600S180GT250XT Reel 4,000 4,000
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    Richardson RFPD 600S180GT250XT 1,000
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    Kyocera AVX Components 600S150FT250XT

    CAP CER 15PF 250V C0G/NP0 0603
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    DigiKey 600S150FT250XT Digi-Reel 9,827 1
    • 1 $2.59
    • 10 $1.682
    • 100 $1.1987
    • 1000 $0.94126
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    600S150FT250XT Cut Tape 9,827 1
    • 1 $2.59
    • 10 $1.682
    • 100 $1.1987
    • 1000 $0.94126
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    600S150FT250XT Reel 8,000 4,000
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    Richardson RFPD 600S150FT250XT 500 500
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    Chip1Stop 600S150FT250XT 2,500
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    Kyocera AVX Components 600S1R0BW250XT

    CAP CER 1PF 250V NP0 0603
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    DigiKey 600S1R0BW250XT Cut Tape 4,281 1
    • 1 $1.32
    • 10 $0.828
    • 100 $0.5659
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    600S1R0BW250XT Digi-Reel 4,281 1
    • 1 $1.32
    • 10 $0.828
    • 100 $0.5659
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    Chip1Stop 600S1R0BW250XT 500
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    Kyocera AVX Components 600S1R2AT250XT

    CAP CER 1.2PF 250V C0G/NP0 0603
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    DigiKey 600S1R2AT250XT Cut Tape 1,631 1
    • 1 $2.11
    • 10 $1.355
    • 100 $0.9536
    • 1000 $0.73975
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    600S1R2AT250XT Digi-Reel 1,631 1
    • 1 $2.11
    • 10 $1.355
    • 100 $0.9536
    • 1000 $0.73975
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    Richardson RFPD 600S1R2AT250XT 1,000
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    • 1000 $0.51
    • 10000 $0.33
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    600S1 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    600S100FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 1% NP0 0603 Original PDF
    600S100FW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 1% NP0 0603 Original PDF
    600S100GT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 2% NP0 0603 Original PDF
    600S100GW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 2% NP0 0603 Original PDF
    600S100JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0603 Original PDF
    600S100JW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0603 Original PDF
    600S101FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 1% NP0 0603 Original PDF
    600S101FW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 1% NP0 0603 Original PDF
    600S101GT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 2% NP0 0603 Original PDF
    600S101GW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 2% NP0 0603 Original PDF
    600S101JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 5% NP0 0603 Original PDF
    600S101JT250XTV American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 5% NP0 0603 Original PDF
    600S101JW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 5% NP0 0603 Original PDF
    600S101KT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 100PF 250V 10% NP0 0603 Original PDF
    600S110FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 11PF 250V 1% NP0 0603 Original PDF
    600S110FW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 11PF 250V 1% NP0 0603 Original PDF
    600S110GT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 11PF 250V 2% NP0 0603 Original PDF
    600S110JT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 11PF 250V 5% NP0 0603 Original PDF
    600S120FT250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 12PF 250V 1% NP0 0603 Original PDF
    600S120FW250XT American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 12PF 250V 1% NP0 0603 Original PDF

    600S1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOF-26

    Abstract: SZP-3026Z
    Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		PDF SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1 SOF-26

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FL TGF2819-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4012036-FS T1G4012036-FS

    NE552R479A

    Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.


    Original     		PDF NE552R479A NE552R479A mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency

    mch215f104zp

    Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
    Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz


    Original     		PDF NE552R479A NE552R479A 100mA 300mA mch215f104zp J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955

    330 j73 Tantalum Capacitor

    Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
    Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest


    Original     		PDF MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original     		PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1

    600S3R9AT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW5IC2030M Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS


    Original     		PDF MW5IC2030M MW5IC2030 IS-95 MW5IC2030NBR1 MW5IC2030GNBR1 MW5IC2030MBR1 MW5IC2030GMBR1 600S3R9AT

    Aeroflex ATC 600

    Abstract: ATSC MSWSHB-020-30 RO4350B DVB-T Schematic MEST2G-020-15 mswsh-100-30 wifi antenna MSWSS-020-40 600S200JW
    Text: Application Note AN55131B Design of LOW COST High Performance 20W and 50W Transmit and Receive Antenna Switches DESCRIPTION Figure 1. This paper describes a 20 W SPDT switch for use in 500 MHz to 4 GHz wireless infrastructure applications such as cellular GSM, CDMA, 3G and


    Original     		PDF AN55131B MSWSS-020-40 MEST2G-020-15 RO4350B Aeroflex ATC 600 ATSC MSWSHB-020-30 DVB-T Schematic MEST2G-020-15 mswsh-100-30 wifi antenna MSWSS-020-40 600S200JW

    8587

    Abstract: 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
    Text: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s


    Original     		PDF MW4IC001MR4/D MW4IC001MR4 MW4IC001MR4 8587 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR RO4350 T491X226K035AS

    DCS1800

    Abstract: NE5520279A NE5520279A-T1
    Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15


    Original     		PDF NE5520279A 0X001 NE5520279A HS350-P3 DCS1800 NE5520279A-T1

    P 1504 EDG

    Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


    Original     		PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 50-ohm P 1504 EDG GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2

    2170S

    Abstract: No abstract text available
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452FL 45-watt, H-33265-8 H-34265-8 2170S

    AGRC10GM

    Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
    Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor


    Original     		PDF AGRC10GM AGRC10GM DS04-260RFPP JESD22-C101A mosfet 6 ghz z823 1661 mhz

    GRM422Y5V106Z050AL

    Abstract: PTMA180402M RO4350
    Text: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications


    Original     		PDF PTMA180402M PTMA180402M 40-watt 20-pin, PG-DSO-20-63 50-ohm GRM422Y5V106Z050AL RO4350

    GRM422Y5V106Z050AL

    Abstract: PTMA210452EL PTMA210452FL RO4350
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical


    Original     		PDF PTMA210452EL PTMA210452FL H-33265-8 PTMA210452EL PTMA210452FL 45-watt, H-34265-8 GRM422Y5V106Z050AL RO4350

    Untitled

    Abstract: No abstract text available
    Text: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •


    Original     		PDF TGF3020-SM TGF3020-SM

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ FEATURES Complete, Fully-Calibrated Synthesis System All Standard Functions: Sin, Cos, Tan, Cosec, Sec, Cot, Arcsin, Arccos, Arctan, etc. Accurate Law Conformance Sine to 0.02% Angular Range of ±500° (Sine Mode) Function Programmable by Pin Strapping


    OCR Scan     		PDF AD639* AD639 AD639, AD639

    IGBT FZ 800

    Abstract: IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6
    Text: V ces V O T ype ICRM VcEsat ton ts tf RthJC Tvj max > IGBT High Power Modules A V MS Tvj=25°C MS TVj=25°C ° c /w °c Tvj=25°C MS Tvj=25°C typ. typ. typ. typ. 0,0570 0,0460 150 150 ; 1H9 0,90 0,25 0,15 ! ÌH2 0,09 0,15 0,15 0,13 0,20 0,20 0,15 0,09 0,15


    OCR Scan     		PDF 16KF4 R17KF4 IGBT FZ 800 IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6

    TS9241

    Abstract: TS924 vip 504 TS924A TS924I VOFN1314 60Oil sgs thomson
    Text: 7 7 SGS-THOMSON k7 M, R ilD(g[S@i[L[l(§TnM R!lD(g@ TS 924 RAIL TO RAIL HIGH OUTPUT CURRENT QUAD OPERATIONAL AMPLIFIER • ■ ■ ■ RAIL TO RAIL INPUT AND OUTPUT LOW NOISE : 9nV/VHF LOW DISTORTION HIGH OUTPUT CURRENT : 80mA (able to drive 32.Q loads) ■ HIG H SPEED : 4M H z1.3V/|iS


    OCR Scan     		PDF TS924 TS924A) TS924I TS924 TS9241 vip 504 TS924A VOFN1314 60Oil sgs thomson

    TSH94

    Abstract: TSH94I sgs thomson
    Text: « k7 A SGS-THOMSON « G e t m it ^ D iÄ D T S H 94 HIGH SPEED LOW POWER QUAD OPERATIONAL AMPLIFIER WITH STANDBY POSITION • 2 SEPARATESTANDBY : REDUCED CONSUMPTION AND HIGH IMPEDANCE OUTPUTS ■ LOW SUPPLY CURRENT : 4.5mA/amp. typ ■ HIG H SPEED : 150M H z- 110V/|iS


    OCR Scan     		PDF TSH94 150MHz- DIP16 TSH94I TSH94 sgs thomson

    TSH94

    Abstract: TSH94I sgs thomson Thomson ceramic capacitor
    Text: 7 7 fc7 £ S G S -T H O M S O N GfflOtaMlilUI^DMDeS TSH94 HIGH SPEED LOW POWER QUAD OPERATIONAL AMPLIFIER WITH STANDBY POSITION 2 SEPARATESTANDBY : REDUCED CONSUMPTION AND HIGH IMPEDANCE OUTPUTS LOW SUPPLY CURRENT : 4.5mA/amp. typ. HIG H SPEED : 150M H z- 110V/|iS


    OCR Scan     		PDF TSH94 150MHz- DIP16 TSH94I TSH94 sgs thomson Thomson ceramic capacitor

    RX2 bri 01

    Abstract: No abstract text available
    Text: W MOTOROLA MC34016 Cordless Universal Telephone Interface The MC34016 is a telephone line Interface meant for use in cordless telephone base stations for CTO, CT1, CT2 and DECT. The circuit forms the interface towards the telephone line and performs all speech and line


    OCR Scan     		PDF MC34016 MC34016 RX2 bri 01