PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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KPIN1041E01
Abstract: S7911 S7912 SE-171
Text: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)
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S7911,
S7912
S7911:
S7912:
SE-171
KPIN1041E01
KPIN1041E01
S7911
S7912
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KPIN1041E02
Abstract: S7911 S7912 SE-171
Text: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)
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S7911,
S7912
S7911:
S7912:
SE-171
KPIN1041E02
KPIN1041E02
S7911
S7912
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Untitled
Abstract: No abstract text available
Text: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ deg. Radiant sensitive area mm2 IP VR = 5 V λ = 870 nm 1 mW/cm2 µA 5.1.3 im Plastikgehäuse mit Filter für 950 nm IRED IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns Ordering code
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Q62702-P84
Q62702-P929
Q62702-P102
Q62702-P5052
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BPW34S
Abstract: Q62702-P1794 bpw 104
Text: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ Radiant sensitive area deg. mm2 IP λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V µA IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes 2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes
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Q62702-P1605
Q62702-P1602
E9087
Q62702-P1790
Q62702-P1601
Q62SMT-Dioden
BPW34S
Q62702-P1794
bpw 104
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bpw 104
Abstract: photodiode 1100 nm 104 b diode diode 22 16 BPW 34 FAS BP 104 FAS
Text: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ Radiant sensitive area deg. mm2 IP λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V µA IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes (cont’d) 2.2.2 SMT-PIN-Fotodioden mit Filter
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Q62702-P1646
Q62702-P1604
Q62702-P463
E9087
Q62702-P1826
Q62702-P1829
Q62702-P1795
Q62702-P5030
Q62702-K47
Q62702-P5313
bpw 104
photodiode 1100 nm
104 b diode
diode 22 16
BPW 34 FAS
BP 104 FAS
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acer laptop battery pinout
Abstract: PCT303W str f 6655 hp laptop battery pinout circuit diagram wireless spy camera car ecu microprocessors RS -24V SDS RELAY difference between rtos psos vx works c executive NEC BONITO bird bell mini project
Text: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,
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64-bit
U14705EE1V0PF00)
VR4121,
VR4122,
VR4181,
VR43xx,
VR5000,
VR5432,
VRC4172,
VRC4173,
acer laptop battery pinout
PCT303W
str f 6655
hp laptop battery pinout
circuit diagram wireless spy camera
car ecu microprocessors
RS -24V SDS RELAY
difference between rtos psos vx works c executive
NEC BONITO
bird bell mini project
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car ecu microprocessors
Abstract: VRC4173 green hills ppc compiler manual PCT303W VRC4172 D4047 alu 9308 d green hills compiler options oem v850 difference between rtos psos vx works c executive 216MIPS
Text: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,
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64-bit
U14705EE1V0PF00)
VR4121,
VR4122,
VR4181,
VR43xx,
VR5000,
VR5432,
VRC4172,
VRC4173,
car ecu microprocessors
VRC4173
green hills ppc compiler manual
PCT303W
VRC4172
D4047
alu 9308 d
green hills compiler options oem v850
difference between rtos psos vx works c executive
216MIPS
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detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
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13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
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fototransistor BPW 39
Abstract: BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor
Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 6. Fotodetektoren für spezielle Anwendungen Package Type ϕ Radiant sensitive area deg. mm2 6. Photodetectors for Special Applications IP IR VR = 10 V Sλ rel tr,tf (VR = 5 V) µA nA % µs 6.1 Blau-empfindliche Fotodiode
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Q62702-P945
Q62702-P1601
Q62702-P270
Q62702-P17-S1
Q62702-P305
fototransistor BPW 39
BPW21
photodetectors
Q62702P945
SFH 3410
BPX 48
fototransistor
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Untitled
Abstract: No abstract text available
Text: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo
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SPV1001N
SPV1001N30
SPV1001N40
SPV1001N
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SPV1001N
Abstract: SPV1001N30 SPV1001N40
Text: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo
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SPV1001N
SPV1001N30
SPV1001N40
SPV1001N
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Untitled
Abstract: No abstract text available
Text: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo
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SPV1001N
SPV1001N30
SPV1001N40
SPV1001N
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G8198
Abstract: G8198-01 G8198-02 SE-171
Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)
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G8198
G8198-01:
G8198-02:
G8198-01
G8198-02
SE-171
KIRD1028E02
G8198-01
G8198-02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)
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G8198
G8198-01:
G8198-02:
SE-171
KIRD1028E02
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G8198
Abstract: G8198-01 G8198-02 SE-171
Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)
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G8198
G8198-01:
G8198-02:
G8198-01
G8198-02
SE-171
KIRD1028E01
G8198-01
G8198-02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)
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G8198
G8198-01:
G8198-02:
G8198-01
G8198-02
SE-171
KIRD1028E02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)
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G8198
G8198-01:
G8198-02:
G8198-01
G8198-02
55phone:
SE-171
KIRD1028E01
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G8198
Abstract: G8198-01 G8198-02 SE-171 photodiode 1 Gbps 1.55 p-i-n photodiode 10 Ghz
Text: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)
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G8198
G8198-01:
G8198-02:
G8198-01
G8198-02
SE-171
KIRD1028E01
G8198-01
G8198-02
photodiode 1 Gbps 1.55
p-i-n photodiode 10 Ghz
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5012PD
Abstract: L028 fyl-3522xx 4802PD L027 35-22p L026
Text: SILICON PHOTO DIODES Open circuit Short Circuit Reverse Dark Reverse Light Reverse Break voltage Current Current Current Down Voltage VOC (ISC) ID(R) (IL) (VBR) Max.(nA) Typ.(uA) Min.(V) VR=10V VR=5V IR=100uA Part No. Package FYL- Typ.(mV) Typ.(uA) 3 L-026
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100uA
5012PD
3522PD
4802PD
L-026
FYL-5012xx
L-027
L-028
FYL-3522xx
5012PD
L028
4802PD
L027
35-22p
L026
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hpdb5
Abstract: HPDB5K-15A HPDB1b-48D HPDB5-14D-B HPDB3B HPDB1-48D HPDR3K-15A
Text: Photodiodes o Ta=25 C Device No Lens Color Sensitive Open Dark Current Wavelength Circuit MAX lp(nm) Voc(v) Id(nA) l(nm) View Light Current (typ) Angle VR(V) IP(uA) VR(V) 2q1/2 Ev 25.0 min 0.4 0.5 1.1 2.25 HPDMIB-4D Water clear 900 500~1100 0.39 2.75 1.85
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1000Lux
HPDB1-48D
-14D-B
HPDB5K-15A
HPDR3K-15A
HPDR3K-45A
hpdb5
HPDB5K-15A
HPDB1b-48D
HPDB5-14D-B
HPDB3B
HPDB1-48D
HPDR3K-15A
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GM2HS
Abstract: GM7VHR germanium photodiode PIN germanium Germanium power GM8HS Germanium Power Devices
Text: E Ge pn Detectors Electrical Characteristics @ 25 °C TYPE ACTIVE SHUN T R E S DARK CURRENT TEST REVERSE MAX REVERSE CAPACITANCE DIA. @Vr= 10mV @Vr=Vtest BIAS VOLTS @Vr MAX K A Min. Typ. (HA MAX.) (Volts) (Volts) (mm.) GM2 0.5 SQ. CUT-OFF FREQ. (pW/VHz) @Vr, 50QRL
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OCR Scan
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PDF
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50QRL
MIL-45208
MIL-S-19500
MIL-S-19500.
MIL-STD-883,
GM2HS
GM7VHR
germanium photodiode PIN
germanium
Germanium power
GM8HS
Germanium Power Devices
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CL 6503
Abstract: HPDR3K-15A n050
Text: Photodiodes RoHS Conformity Ta=25cC Device No Lens Color Sensitive Open Dark Current Wavelength Circuit MAX A.p(nm) A-(nm) Voc(v) Id(nA) Light Current (typ) View Angle VR(V) IP(uA) VR(V) Ev 291/2 1000Lux 40 1000LUX 40 O.Smw/ciri2 50 12.0 min 4.6P -0.9 -1.75
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OCR Scan
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PDF
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1000LUX
HPDR3K-15A
HPDR3K-45A
1000LUX
CL 6503
n050
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HPDB1B-48D
Abstract: HPDB5K-15A HPDB3J-14D HPDR3K-15A HPDR3K-45A hpdb5 HPDB5-14D-B
Text: Photodiodes Ta=250C Sensitive Open Dark Current Light Current typ Device No HPDB1-48D Lens Color Waterclear Wavelength Circuit Xp(nm) X(nm) 900 500-1100 (MAX) Angle VR(V) IP(uA) VR(V) Ev 291/2 30 10 10 10 1000LUX 40 30 10 10 10 1000LUX 40 Voc(v) Id(nA) 0.39
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OCR Scan
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PDF
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1000LUX
HPDB1-48D
HPDB1b-48D
HPDB3J-14D
HPDB3b-14D
HPDB5-14D-B
HPDB5K-15A
HPDR3K-15A
HPDR3K-45A
hpdb5
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