13PD75LDC-S
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD75LDC-S The 13PD75LDC-S, an InGaAs photodiode with a 75µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is a low-dark-current version of the 13PD75 intended for high speed and low noise applications. The diameter of the photosensitive region is
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13PD75LDC-S
13PD75LDC-S,
13PD75
200oC,
1300nm
-40oC
250oC
13PD75LDC-S
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75LDC-TO The 13PD75LDC-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO46 header, is a low-dark-current version of the 13PD75 intended for high speed and low noise applications.
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13PD75LDC-TO
13PD75LDC-TO,
13PD75
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13PD75LDC-ST
Abstract: 13PD75-ST
Text: High Preformance InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 13PD75LDC-ST The 13PD75LDC-ST, an InGaAs photodiode with a 75µm diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is a low-darkcurrent version of the 13PD75-ST intended for high speed and low noise applications. The
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13PD75LDC-ST
13PD75LDC-ST,
13PD75-ST
200oC,
1300nm
-40oC
250oC
13PD75LDC-ST
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13PD75LDC-TO
Abstract: InGaAs photodiode TO-46
Text: High Speed InGaAs p-i-n Photodiode 13PD75LDC-TO The 13PD75LDC-TO, an InGaAs photodiode with 75µm-diameter photosensitive region and packaged in a TO-46 header, is a low-dark-current version of the 13PD75 intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small
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Original
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PDF
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13PD75LDC-TO
13PD75LDC-TO,
13PD75
200oC,
1300nm
-40oC
250oC
13PD75LDC-TO
InGaAs photodiode TO-46
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD75LDC-S The 13PD75LDC-S an InGaAs photodiode with a 75µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is a low-dark-current version on the 13PD75 intended for high speed and low
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Original
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PDF
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13PD75LDC-S
13PD75LDC-S
13PD75
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD75LDC-ST, -SMA, -FC, -SC The 13PD75LDC-ST, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO46 header and aligned in an AT&T ST active device mount, is a low-dark-current version of the 13PD75-ST
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13PD75LDC-ST,
13PD75-ST
1300nm
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detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
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13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
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2PD250
Abstract: 35PD10M 35PD3M detector inas
Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared
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2PD250
2PD500
35PD5M
35PD10M
35PD3M
detector inas
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