55um
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD55-C Anadigics #135599116 The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD55-C
13PD55-C,
1300nm
1500nm
-40oC
250oC
55um
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD55-C The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very
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13PD55-C
13PD55-C,
1300nm
-40oC
250oC
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13PD55-TO
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-TO The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter photosensitive region and packaged in a TO46 header, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and dielectric passivation provide very low noise
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13PD55-TO
13PD55-TO,
13PD55-TO
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detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
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13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
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ingaas
Abstract: 13PD55-TO
Text: High Speed InGaAs p-i-n Photodiode 13PD55-TO The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter photosensitive region and packaged in a TO-46 header, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and
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13PD55-TO
13PD55-TO,
200oC,
1300nm
-40oC
250oC
ingaas
13PD55-TO
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13PD55-F
Abstract: No abstract text available
Text: High Speed Fiber Pigtailed InGaAs p-i-n Photodiode 13PD55-F The 13PD55-F is an InGaAs photodiode with a 55µm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customersupplied fiber in single or multi-mode versions. The coaxial package offers streamlined design
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13PD55-F
13PD55-F
200oC,
1300nm
-40oC
250oC
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13PD55-S
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor
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13PD55-S
13PD55-S,
200oC,
1300nm
-40oC
250oC
13PD55-S
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-F The 13PD55-F is an InGaAs photodiode with a 55mm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multi-mode
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13PD55-F
13PD55-F
55mm-diameter
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications
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13PD55-S
13PD55-S,
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2PD250
Abstract: 35PD10M 35PD3M detector inas
Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared
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2PD250
2PD500
35PD5M
35PD10M
35PD3M
detector inas
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