Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    13PD55 Search Results

    13PD55 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    13PD55-F Anadigics High Speed InGaAs p-i-n Photodiode Original PDF
    13PD55-S Anadigics High Speed InGaAs p-i-n Photodiode Original PDF

    13PD55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    55um

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode 13PD55-C Anadigics #135599116 The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very


    Original
    PDF 13PD55-C 13PD55-C, 1300nm 1500nm -40oC 250oC 55um

    Untitled

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode 13PD55-C The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very


    Original
    PDF 13PD55-C 13PD55-C, 1300nm -40oC 250oC

    13PD55-TO

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-TO The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter photosensitive region and packaged in a TO46 header, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and dielectric passivation provide very low noise


    Original
    PDF 13PD55-TO 13PD55-TO, 13PD55-TO

    detector inas

    Abstract: No abstract text available
    Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO


    Original
    PDF 13PD55 13PD75 13PD75LDC 13PD100 13PD150 35PD300 35PD300LDC 2PD250 detector inas

    ingaas

    Abstract: 13PD55-TO
    Text: High Speed InGaAs p-i-n Photodiode 13PD55-TO The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter photosensitive region and packaged in a TO-46 header, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and


    Original
    PDF 13PD55-TO 13PD55-TO, 200oC, 1300nm -40oC 250oC ingaas 13PD55-TO

    13PD55-F

    Abstract: No abstract text available
    Text: High Speed Fiber Pigtailed InGaAs p-i-n Photodiode 13PD55-F The 13PD55-F is an InGaAs photodiode with a 55µm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customersupplied fiber in single or multi-mode versions. The coaxial package offers streamlined design


    Original
    PDF 13PD55-F 13PD55-F 200oC, 1300nm -40oC 250oC

    13PD55-S

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor


    Original
    PDF 13PD55-S 13PD55-S, 200oC, 1300nm -40oC 250oC 13PD55-S

    Untitled

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-F The 13PD55-F is an InGaAs photodiode with a 55mm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multi-mode


    Original
    PDF 13PD55-F 13PD55-F 55mm-diameter

    Untitled

    Abstract: No abstract text available
    Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications


    Original
    PDF 13PD55-S 13PD55-S,

    2PD250

    Abstract: 35PD10M 35PD3M detector inas
    Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared


    Original
    PDF 2PD250 2PD500 35PD5M 35PD10M 35PD3M detector inas