13PD150-S
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm photosensitive region mounted on a metalized ceramic substrate, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in hybrid modules is enabled by the relatively large photosensitive
|
Original
|
PDF
|
13PD150-S
13PD150-S,
200oC,
1300nm
-40oC
250oC
13PD150-S
|
Untitled
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode Sheet 1 of 3 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for moderate-to-high speed applications. Efficiency coupling to
|
Original
|
PDF
|
13PD150-S
13PD150-S,
|
13pd150-s
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode Sheet 1 of 1 13PD150-ST, -SMA, -FC, -SC The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high coupling efficience to multimode fiber in moderate-to-high speed applications. Planar semiconductor design and dielectric passivation
|
Original
|
PDF
|
13PD150-ST,
1300nm
13pd150-s
|
InGaAs photodiode TO-46
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode Sheet 1 of 3 13PD150-TO The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in
|
Original
|
PDF
|
13PD150-TO
13PD150-TO,
InGaAs photodiode TO-46
|
13PD150-TO
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode 13PD150-TO The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header, is intended for moderate-to-high speed applications. Efficient coupling to mulit-mode fiber in active device receptacles is enabled by the relatively large
|
Original
|
PDF
|
13PD150-TO
13PD150-TO,
200oC,
1300nm
-40oC
250oC
13PD150-TO
|
13PD150-ST
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 13PD150-ST The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar
|
Original
|
PDF
|
13PD150-ST
13PD150-ST,
200oC,
1300nm
-40oC
250oC
13PD150-ST
|
detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
|
Original
|
PDF
|
13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
|
2PD250
Abstract: 35PD10M 35PD3M detector inas
Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared
|
Original
|
PDF
|
2PD250
2PD500
35PD5M
35PD10M
35PD3M
detector inas
|
