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    UPA833TF Search Results

    UPA833TF Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA833TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF
    UPA833TF NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR Original PDF
    uPA833TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACK Original PDF
    UPA833TF-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF
    uPA833TF-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACK Original PDF

    UPA833TF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPA833TF

    Abstract: NE68830
    Text: NONLINEAR MODEL UPA833TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 3.8e-16 7e-16 MJC 0.48 0.34 BF 135.7 109 XCJC 0.56 NF 1 1 CJS 0.75 VAF 28 15 VJS 0.75 IKF 0.6 0.19 MJS ISE 3.8e-15 7.9e-13 FC 0.75 0.5 3e-12 NE 1.49 2.19 TF 11e-12


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    PDF UPA833TF 8e-16 8e-15 5e-16 796e-12 549e-12 7e-16 9e-13 4e-12 18e-12 UPA833TF NE68830

    UPA833TF

    Abstract: q2.048
    Text: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12


    Original
    PDF UPA836TF 7e-16 9e-13 4e-12 18e-12 8e-16 8e-15 5e-16 796e-12 549e-12 UPA833TF q2.048

    5252 F 1005

    Abstract: 5252 F 1114 UPA836TF NE685 NE688 S21E UPA833TF UPA836TF-T1 5942
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 2.1 ± 0.1 Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA


    Original
    PDF UPA836TF NE685, NE688) UPA836TF NE685 NE688 UPA833TF UPA836TF-T1 24-Hour 5252 F 1005 5252 F 1114 NE685 NE688 S21E UPA836TF-T1 5942

    pt 6964

    Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original
    PDF UPA833TF NE688, NE685) UPA833TF UPA833TF-T1 NE68830 NE68530 UPA836TF 24-Hour pt 6964 MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1

    ha 7741

    Abstract: UPA833TF 13924 IC 7487
    Text: NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA833TF OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, Vce = 3 V, Ic = 3 mA HIGH GAIN: Q1: IS21 EI2 = 3.5 dB TYP at f = 2 GHz, Vce = 1 V,


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    PDF NE688, NE685) UPA833TF UPA833TF NE68830 NE68530 UPA833TF-T1 UPA836TF ha 7741 13924 IC 7487

    Um 3562

    Abstract: IC 7487 UPA833TF 263 7660 ic 7421 transistor M 9741 NT 2955 ON transistor FA 5323 IC 7431 ha 7741
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA833TF OUTLINE DIMENSIONS Units in mm Package O utline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 —


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    PDF UPA833TF NE6881, NE685) UPA833TF UPA833TF-T1 Um 3562 IC 7487 263 7660 ic 7421 transistor M 9741 NT 2955 ON transistor FA 5323 IC 7431 ha 7741

    UPA833TF

    Abstract: Um 3562
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA833TF OUTLINE DIMENSIONS Units in mm FEATURES Package O utline TS06 (Top View) LOW NOISE: Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA


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    PDF UPA833TF NE688, NE685) NE68830 NE68530 UPA833TF-T1 24-Hour UPA833TF Um 3562

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


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    PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    MJE 13031

    Abstract: 054S1 cd 4637
    Text: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA


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    PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 UPA833TF MJE 13031 054S1 cd 4637

    UPA833TF

    Abstract: transistor MJE 2955 uP 6308 AD
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB TYP at f = 2 GHz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 — ► 1.25±0.1-^


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    PDF UPA833TF NE688, NE685) UPA833TF NE68830 NE68530 UPA833TF-T1 UPA836TF transistor MJE 2955 uP 6308 AD

    MJE 13031

    Abstract: LA 7693
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q 1:NF = 1.5 dB TYP at f = 2 G Hz, V c e = 3 V , lc = 3 m A 2.1 ±0.1 Q 2:NF = 1.7 dB TYP at f = 2 G Hz, V c e = 1 V, Ic = 3 mA


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    PDF UPA836TF NE685, NE688) PA836TF hie-14 NE68530 NE68830 UPA836TF-T1 UPA833TF MJE 13031 LA 7693

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


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    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    transistor M 9741

    Abstract: cd 4017 IC NEC JAPAN IC IC D 7520 transistor 9718 ic cd 4017 IC 4017 B transistor M 9718 NPN C 5344 nec 4312 E 70 5059
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION 2.10± 0.1 • The ¿¡PA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF


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    PDF uPA833TF 2SC5193, 2SC4959) 2SC4959 transistor M 9741 cd 4017 IC NEC JAPAN IC IC D 7520 transistor 9718 ic cd 4017 IC 4017 B transistor M 9718 NPN C 5344 nec 4312 E 70 5059

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


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    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363