UPA833TF
Abstract: transistor MJE 2955 uP 6308 AD
Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB TYP at f = 2 GHz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 — ► 1.25±0.1-^
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UPA833TF
NE688,
NE685)
UPA833TF
NE68830
NE68530
UPA833TF-T1
UPA836TF
transistor MJE 2955
uP 6308 AD
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UPA833TF
Abstract: Um 3562
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR PA833TF OUTLINE DIMENSIONS Units in mm FEATURES Package O utline TS06 (Top View) LOW NOISE: Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA
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UPA833TF
NE688,
NE685)
NE68830
NE68530
UPA833TF-T1
24-Hour
UPA833TF
Um 3562
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nec 14312 transistor
Abstract: tag 9040 tag 8538 TM 5503 tag 8504 nec 6681 TAG 8743 tag 14472 8504 nec
Text: PRELIMINARY DATA SHEET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION The juPA836TF has tw o different built-irvtransistors (Q1 and Q 2) for low noise amplification in the VHF band to UHF
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uPA836TF
2SC5193,
2SC4959)
2SC4959
nec 14312 transistor
tag 9040
tag 8538
TM 5503
tag 8504
nec 6681
TAG 8743
tag 14472
8504 nec
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transistor M 9741
Abstract: cd 4017 IC NEC JAPAN IC IC D 7520 transistor 9718 ic cd 4017 IC 4017 B transistor M 9718 NPN C 5344 nec 4312 E 70 5059
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION 2.10± 0.1 • The ¿¡PA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF
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uPA833TF
2SC5193,
2SC4959)
2SC4959
transistor M 9741
cd 4017 IC
NEC JAPAN IC IC D 7520
transistor 9718
ic cd 4017
IC 4017 B
transistor M 9718
NPN C 5344
nec 4312
E 70 5059
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