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    NE698M01 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE698M01 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION Original PDF
    NE698M01-T1 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION Original PDF

    NE698M01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    uA 741 IC

    Abstract: TRANSISTOR 6019 IC ua 741 S21E NE698M01 NE698M01-T1 OF IC 741 ic ca 741 SOT-363 662
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 17 GHz TYP • HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz, VCE = 2 V, IC = 1 mA


    Original     		NE698M01 NE698M01 OT-363 OT-23 OT143 24-Hour uA 741 IC TRANSISTOR 6019 IC ua 741 S21E NE698M01-T1 OF IC 741 ic ca 741 SOT-363 662 PDF

    NE686

    Abstract: NE698M01 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 17 GHz TYP at 2 V, 7 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA • HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz


    Original     		NE698M01 NE698M01 NE686) OT363 24-Hour NE686 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor PDF

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor PDF

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 PDF

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF PDF

    FR110

    Abstract: 3059 npn transistor 3268 SOT-363 RF 2.0GHZ transistor 554-1
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 H IG H fT : 17 GHz TYP • NE698M01 TOP VIEW H IG H G A IN : 2.1 ± 0.1 IS21 e|2 = 15.5 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 1 mA


    OCR Scan     		NE698M01 NE698M01 OT-363 OT-23 24-Hour FR110 3059 npn transistor 3268 SOT-363 RF 2.0GHZ transistor 554-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • NE698M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 H IG H fr: 17 G Hz TYP a t 2 V , 7 mA TO P VIEW • LOW NOISE FIGURE: - 2.1 ± 0 .1


    OCR Scan     		NE698M01 NE698M01 NE686) OT363 PDF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685 PDF

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363 PDF