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    UPA836TF Search Results

    UPA836TF Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UPA836TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF
    uPA836TF NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PA Original PDF
    UPA836TF-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF
    uPA836TF-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PA Original PDF

    UPA836TF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPA833TF

    Abstract: q2.048
    Text: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12


    Original     		PDF UPA836TF 7e-16 9e-13 4e-12 18e-12 8e-16 8e-15 5e-16 796e-12 549e-12 UPA833TF q2.048

    5252 F 1005

    Abstract: 5252 F 1114 UPA836TF NE685 NE688 S21E UPA833TF UPA836TF-T1 5942
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 2.1 ± 0.1 Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA


    Original     		PDF UPA836TF NE685, NE688) UPA836TF NE685 NE688 UPA833TF UPA836TF-T1 24-Hour 5252 F 1005 5252 F 1114 NE685 NE688 S21E UPA836TF-T1 5942

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    pt 6964

    Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original     		PDF UPA833TF NE688, NE685) UPA833TF UPA833TF-T1 NE68830 NE68530 UPA836TF 24-Hour pt 6964 MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1

    UPA833TF

    Abstract: NE68830
    Text: NONLINEAR MODEL UPA833TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 3.8e-16 7e-16 MJC 0.48 0.34 BF 135.7 109 XCJC 0.56 NF 1 1 CJS 0.75 VAF 28 15 VJS 0.75 IKF 0.6 0.19 MJS ISE 3.8e-15 7.9e-13 FC 0.75 0.5 3e-12 NE 1.49 2.19 TF 11e-12


    Original     		PDF UPA833TF 8e-16 8e-15 5e-16 796e-12 549e-12 7e-16 9e-13 4e-12 18e-12 UPA833TF NE68830

    MJE 13031

    Abstract: 054S1 cd 4637
    Text: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 UPA833TF MJE 13031 054S1 cd 4637

    5252 F 1005

    Abstract: 6681 - 250 transistor npn d 5058 cd 4027
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V ce = 3 V, Ic = 3 mA Q 2:N F = 1.7 dB T Y P at f = 2 G Hz, V ce = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 24-Hour 5252 F 1005 6681 - 250 transistor npn d 5058 cd 4027

    MJE 13031

    Abstract: LA 7693
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q 1:NF = 1.5 dB TYP at f = 2 G Hz, V c e = 3 V , lc = 3 m A 2.1 ±0.1 Q 2:NF = 1.7 dB TYP at f = 2 G Hz, V c e = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) PA836TF hie-14 NE68530 NE68830 UPA836TF-T1 UPA833TF MJE 13031 LA 7693

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    ha 7741

    Abstract: UPA833TF 13924 IC 7487
    Text: NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA833TF OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, Vce = 3 V, Ic = 3 mA HIGH GAIN: Q1: IS21 EI2 = 3.5 dB TYP at f = 2 GHz, Vce = 1 V,


    OCR Scan     		PDF NE688, NE685) UPA833TF UPA833TF NE68830 NE68530 UPA833TF-T1 UPA836TF ha 7741 13924 IC 7487

    UPA833TF

    Abstract: transistor MJE 2955 uP 6308 AD
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB TYP at f = 2 GHz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 — ► 1.25±0.1-^


    OCR Scan     		PDF UPA833TF NE688, NE685) UPA833TF NE68830 NE68530 UPA833TF-T1 UPA836TF transistor MJE 2955 uP 6308 AD

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    nec 14312 transistor

    Abstract: tag 9040 tag 8538 TM 5503 tag 8504 nec 6681 TAG 8743 tag 14472 8504 nec
    Text: PRELIMINARY DATA SHEET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION The uPA836TF has tw o different built-irvtransistors (Q1 and Q 2) for low noise amplification in the VHF band to UHF


    OCR Scan     		PDF uPA836TF 2SC5193, 2SC4959) 2SC4959 nec 14312 transistor tag 9040 tag 8538 TM 5503 tag 8504 nec 6681 TAG 8743 tag 14472 8504 nec

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363