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    UBP 100 Search Results

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    Everlight Electronics Co Ltd ELUC3535NUB-P7085Q15070100-S22Q

    High Power LEDs - Single Color
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    Mouser Electronics ELUC3535NUB-P7085Q15070100-S22Q
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    UBP 100 Datasheets Context Search

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    ubp 100

    Abstract: "line AMPLIFIER"
    Text: Model UBP Universal Bi-Polar In-Line Amplifier DESCRIPTION The Model UBP bi-polar amplifier supplies a highly regulated bridge excitation voltage for the transducer and converts the millivolt signal of the transducer to a ±5 Vdc signal. The Universal In-line features two selectable excitation voltages, programmable gain settings, a wide adjustment range on the zero, and a


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    PDF 008832-1-EN ubp 100 "line AMPLIFIER"

    Sensotec pressure transducer

    Abstract: Sensotec transducer Sensotec pressure wiring diagrams sensotec Sensotec transducer A Sensotec 60 pressure transducer Sensotec 42 Sensotec 43 Sensotec Pressure transducer A "Pressure Transducers" sensotec
    Text: MODEL UBP UNIVERSAL IN-LINE TRANSDUCER AMPLIFIER BI-POLAR SUPPLY, VOLTAGE OUTPUT, LOW GAIN 5 to 166 mV/V 2080 Arlingate Lane, Columbus, Ohio 43228 • (614) 850-5000 Sensotec, Inc. 2080 Arlingate Lane Columbus, Ohio 43228 Copyright 1995 by Sensotec, Inc. all rights reserved


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    e2p 25

    Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B
    Text: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM


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    PDF M36L0R7040T0 M36L0R7040B0 M36L0R7040T0: 88C4h M36L0R7040B0: 88C5h 54MHz e2p 25 J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B

    M69KR096A

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
    Text: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


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    PDF M36L0R8060T0 M36L0R8060B0 M36L0R8060T0: 880Dh M36L0R8060B0: 880Eh 54MHz M69KR096A J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0

    M36P0R9070E0

    Abstract: M58PR512J M69KB128AB
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


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    PDF M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB

    nor flash 1.8V

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


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    PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz nor flash 1.8V PSRAM M36P0R9060E0 M58PR512J

    m36w0r6050u

    Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
    Text: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory


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    PDF M36W0Rx0x0UL4 64-Mbit 32-Mbit M36W0R5040U4: 8828h M36W0R5040L4: 8829h M36W0R6040U4 M36W0R6050U4: 88C0h m36w0r6050u m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M69KM024A ADQ14 M69KM048A ADQ15

    M36P0R9070E0

    Abstract: M58PR512J M69KB128AB
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


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    PDF M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB

    M36W0R5040

    Abstract: m36w0r5040t M36W0R5040T5 M36W0R5040B5 8815h 8814h
    Text: M36W0R5040T5 M36W0R5040B5 32-Mbit 2 Mbits x16, multiple bank, burst flash memory and 16-Mbit (1 Mbit ×16) PSRAM, 1.8 V supply, MCP Features • ■ ■ ■ Multi-chip package – 1 die of 32-Mbit (2 Mbits x16, multiple bank, burst) flash memory – 1 die of 16 Mbit (1 Mbit x16) PSRAM


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    PDF M36W0R5040T5 M36W0R5040B5 32-Mbit 16-Mbit M36W0R5040T5: 8814h M36W0R5040B5: 8815h TFBGA88 M36W0R5040 m36w0r5040t M36W0R5040B5 8814h

    Untitled

    Abstract: No abstract text available
    Text: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM


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    PDF M36L0R7040T0 M36L0R7040B0 M36L0R7040T0: 88C4h M36L0R7040B0: 88C5h 54MHz

    M36P0R8070E0

    Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
    Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM


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    PDF M36P0R8070E0 TFBGA107 M36P0R8070E0 M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15

    PSRAM

    Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


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    PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz PSRAM M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ

    M30L0T7000T0

    Abstract: J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000
    Text: M36L0T7050T0 M36L0T7050B0 128Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM


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    PDF M36L0T7050T0 M36L0T7050B0 128Mbit 32Mbit 8Mx16, 2Mx16) M36L0T7050T0: 88C4h M30L0T7000T0 J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000

    M58WR064KT

    Abstract: M36W0R M36W0R604
    Text: M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 4 Mbits x16, multiple bank, burst Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP Preliminary Data Features • Multichip package – 1 die of 64 Mbits (4 Mbits x16) flash


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    PDF M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 16-Mbit 32-Mbit M36W0R6050T3: 8810h M58WR064KT M36W0R M36W0R604

    M36W0R5040

    Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP
    Text: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features „ Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits


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    PDF M36W0Rx0x0x7 64-Mbit 16-Mbit 32-Mbit M36W0R5030T7 M36W0R5040T7: 8814h M36W0R5030B7 M36W0R5040B7: 8815h M36W0R5040 M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT Numonyx MCP

    PSRAM

    Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
    Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory


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    PDF M36L0R7060T1 M36L0R7060B1 M36L0R7060T1: 88C4h M36L0R7060B1: 88C5h TFBGA88 PSRAM M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100

    Untitled

    Abstract: No abstract text available
    Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM


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    PDF M36P0R8070E0

    23LIST

    Abstract: No abstract text available
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


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    PDF M36P0R9070E0 128Mbit TFBGA107 M36P0R9070E0ZAQF M36P0R9070E0 23LIST

    PSRAM

    Abstract: M36P0R9070E0 M58PR512J M69KB128AA
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory


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    PDF M36P0R9070E0 128Mbit TFBGA107 2112-bit 64-bit PSRAM M36P0R9070E0 M58PR512J M69KB128AA

    M36L0R7050U3

    Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
    Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple


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    PDF M36L0Rx0x0UL3 256-Mbit 64-Mbit M36L0R7050U3/M36L0R7060U3: 882Eh M36L0R8050U3/M36L0R8060U3: 881Ch M36L0R7050L3/M36L0R7060L3: 882Fh M36L0R8050L3/M36L0R8060L3: M36L0R7050U3 M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB

    Untitled

    Abstract: No abstract text available
    Text: Mat i ng face arc. tn I FT If chiplpx FO m u l t i mode 50/125 p 617S4-90 ExED Y HEE P r o t e c t i on c a p i_o Heat shrink t ubp/ t& □ KO=> P r o t e c t ion l e v e l : I P20 T e m p e r a t u r e r a n g e : -10° C . . . + 7 0 ° C 11 33012410500005


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    PDF 617S4-90 33012410O D-32339 241XXX0005 100210841/UGD/008/A

    Untitled

    Abstract: No abstract text available
    Text: UbP¥ } 2 3105 K a sh iw a C o u rt Torrance. C A 9 0505 Phone: 800 5 7 9 -4 8 7 5 /(3 1 0 ) 534.1505 Fax (3 1 0 )5 3 4 .1 4 2 4 E -m ail w ebm aster@ led tro nics co m W ebsite: v a v w ledtrontcs com LEDTRONICS, INC: THE FUTURE OF LIGHT L u m in a ire P h o to m e tric R ep ort


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    PDF PS-600-SIW -001-BU 120VAC, LED30HPS-600-SIW

    TC4001UBP

    Abstract: tc4011bp applications TC4011UBP IC - TC4001BP
    Text: C2MOS DIG IT A L IN T E G R A T E D CIRCUIT S ILIC O N M O N O L IT H IC TC4001UBP, TC4011UBP TC4001UBP QUAD 2 INPUT NOR GATE TC4011UBP QUAD 2 INPUT NAND GATE TC4001UBP and TC4011UBP are 2 input NOR gate and 2 input NAND gate respectively. The pin connections


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    PDF TC4001UBP, TC4011UBP TC4001UBP TC4011UBP TC4001BP TC4011BP TC4001UBP) tc4011bp applications IC - TC4001BP

    TC4069 OSCILLATOR

    Abstract: Toshiba TC4069 TC4069 TC4069UB tc4069ubp DIP14-P-300-2 TC4069UBF TC4069UBFN TC4069UBFT TC4069ubp japan
    Text: TO SH IBA TC4069UB P/UBF/U BFN/U BFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT Note The JEDEC SOP (FN) is not available in Japan TC4069UB HEX INVERTER TC4069UB contains six circuits of inverters. Since the


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    PDF TC4069 TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT TC4069UB TC4069 OSCILLATOR Toshiba TC4069 tc4069ubp DIP14-P-300-2 TC4069UBF TC4069UBFN TC4069UBFT TC4069ubp japan