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    M58PR512J Search Results

    M58PR512J Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M58PR512J STMicroelectronics 256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories Original PDF
    M58PR512JE96ZB5E STMicroelectronics 256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories Original PDF

    M58PR512J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58PR256J M58PR512J M58PR512JE96Z5E M58PR512J

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program


    Original     		PDF M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memories PRELIMINARY DATA Features summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


    Original     		PDF M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb

    bc 107 common base h parameters

    Abstract: M58PR256J M58PR512J CR10
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58PR256J M58PR512J bc 107 common base h parameters M58PR256J M58PR512J CR10

    TFBGA105

    Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
    Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M39P0R9080E0 TFBGA105 TFBGA105 M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit

    TFBGA105

    Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
    Text: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)


    Original     		PDF M39P0R8070E2 M39P0R9070E2 512Mbit TFBGA105 64-bit TFBGA105 KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax

    M69KB096AB

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 108MHz, 66MHz TFBGA10thout M69KB096AB PSRAM M36P0R9060E0 M58PR512J

    TFBGA105

    Abstract: M39P0R9070E0 M58PR512J M65KA128AL
    Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low


    Original     		PDF M39P0R9070E0 TFBGA105 64-bit 2112-bit TFBGA105 M39P0R9070E0 M58PR512J M65KA128AL

    23LIST

    Abstract: No abstract text available
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


    Original     		PDF M36P0R9070E0 128Mbit TFBGA107 M36P0R9070E0ZAQF M36P0R9070E0 23LIST

    PSRAM

    Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz PSRAM M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ

    PSRAM

    Abstract: M36P0R9070E0 M58PR512J M69KB128AA
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory


    Original     		PDF M36P0R9070E0 128Mbit TFBGA107 2112-bit 64-bit PSRAM M36P0R9070E0 M58PR512J M69KB128AA

    M36P0R9070E0

    Abstract: M58PR512J M69KB128AB
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


    Original     		PDF M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB

    BGA-Z85

    Abstract: ADQ0-ADQ15 M36P0R9060N0 M69KM096AA
    Text: M36P0R9060N0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060N0 TFBGA107 BGA-Z85 ADQ0-ADQ15 M36P0R9060N0 M69KM096AA

    nor flash 1.8V

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz nor flash 1.8V PSRAM M36P0R9060E0 M58PR512J

    TFBGA105

    Abstract: TFBGA-105 M39P0R9070E0 M58PR512J M65KA128AL
    Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M39P0R9070E0 TFBGA105 TFBGA105 TFBGA-105 M39P0R9070E0 M58PR512J M65KA128AL