synchronous nor flash
Abstract: BCR10 M69KB128AB bcr100
Text: M69KB128AB 128 Mbit 8Mb x16 1.8 V Supply, Burst PSRAM Preliminary Data Feature summary • Supply voltage – VCC = 1.7 to 1.95 V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable operating modes – Asynchronous modes: Random Read, and
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M69KB128AB
synchronous nor flash
BCR10
M69KB128AB
bcr100
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BCR10
Abstract: M69KB128AB
Text: M69KB128AB 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and
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M69KB128AB
104MHz
BCR10
M69KB128AB
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23LIST
Abstract: No abstract text available
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
M36P0R9070E0ZAQF
M36P0R9070E0
23LIST
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M36P0R9070E0
Abstract: M58PR512J M69KB128AB
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
108MHz,
66MHz
M36P0R9070E0
M58PR512J
M69KB128AB
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M36P0R9070E0
Abstract: M58PR512J M69KB128AB
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
108MHz,
66MHz
M36P0R9070E0
M58PR512J
M69KB128AB
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