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    TRENCH MOS SCHOTTKY RECTIFIER Search Results

    TRENCH MOS SCHOTTKY RECTIFIER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    TRENCH MOS SCHOTTKY RECTIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSP15U100S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1309033

    Untitled

    Abstract: No abstract text available
    Text: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311020

    Untitled

    Abstract: No abstract text available
    Text: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033

    Untitled

    Abstract: No abstract text available
    Text: TSP10U60S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1311023

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401021

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1310024

    10U45

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 10U45

    Untitled

    Abstract: No abstract text available
    Text: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311001

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023

    Untitled

    Abstract: No abstract text available
    Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311002

    Untitled

    Abstract: No abstract text available
    Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022

    Untitled

    Abstract: No abstract text available
    Text: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF30H120C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401025

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311017

    marking b14 diode

    Abstract: No abstract text available
    Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability


    Original     		PDF TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 marking b14 diode

    Untitled

    Abstract: No abstract text available
    Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability


    Original     		PDF TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1311013

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309049

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309046

    Untitled

    Abstract: No abstract text available
    Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307012

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307013

    Untitled

    Abstract: No abstract text available
    Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309048

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1310028