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    TSF20H120C Search Results

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    TSF20H120C Price and Stock

    Taiwan Semiconductor TSF20H120C

    DIODE ARR SCHOTT 120V ITO220AB
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    DigiKey TSF20H120C Tube 1,000
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    Avnet Americas TSF20H120C Tube 1,000
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    • 1000 $0.54984
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    Mouser Electronics TSF20H120C
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    Future Electronics TSF20H120C 1,000
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    Taiwan Semiconductor TSF20H120C-S

    DIODE SCHOTTKY 120V 10A ITO220AB
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    DigiKey TSF20H120C-S Tube 1,000
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    Avnet Americas TSF20H120C-S Tube 1,000
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    Mouser Electronics TSF20H120C-S
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    Taiwan Semiconductor TSF20H120C C0

    - Rail/Tube (Alt: TSF20H120C C0)
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    Avnet Americas TSF20H120C C0 Tube 1,000
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    Taiwan Semiconductor TSF20H120C C0G

    Diode Schottky 120V 20A 3-Pin(3+Tab) ITO-220AB Tube
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    Verical TSF20H120C C0G 900 21
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    TSF20H120C C0G 100 100
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    Arrow Electronics TSF20H120C C0G 900 99 Weeks 1
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    TSF20H120C C0G 100 100
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    TSF20H120C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSF20H120C C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 120V ITO220AB Original PDF
    TSF20H120C-S C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 120V 10A ITO220AB Original PDF

    TSF20H120C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original
    PDF TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309048

    Untitled

    Abstract: No abstract text available
    Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original
    PDF TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307012

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original
    PDF TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original
    PDF TSF20H100C TSF20H200C 2011/65/EU 2002/96/EC ITO-220AB D1404001

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original
    PDF TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006