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TSF30U60C Price and Stock

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Taiwan Semiconductor TSF30U60C DIODE ARR SCHOT 60V 15A ITO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSF30U60C	Tube			1,000	1 - 10 - 100 - 1000 $0.77882 10000 $0.77882	Buy Now
Avnet Americas	TSF30U60C	Tube		12 Weeks	1,000	1 - 10 - 100 - 1000 $0.76324 10000 $0.69054	Buy Now
Mouser Electronics	TSF30U60C					1 - 10 - 100 - 1000 $0.842 10000 $0.744	Get Quote
Future Electronics	TSF30U60C			12 Weeks	1,000	1 - 10 - 100 - 1000 $0.774 10000 $0.774	Buy Now
EBV Elektronik	TSF30U60C			14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Taiwan Semiconductor TSF30U60C C0 - Rail/Tube (Alt: TSF30U60C C0)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TSF30U60C C0	Tube			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

TSF30U60C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSF30U60C C0G		Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 60V ITO220AB		Original	PDF

TSF30U60C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311002	PDF
Untitled Abstract: No abstract text available Text: TSF30U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and	Original	TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408033	PDF
Untitled Abstract: No abstract text available Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022	PDF
Untitled Abstract: No abstract text available Text: TSF30U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and	Original	TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022	PDF
Untitled Abstract: No abstract text available Text: TSF30U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and	Original	TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022	PDF