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    TSP10U60S Price and Stock

    Taiwan Semiconductor TSP10U60S

    DIODE SCHOTTKY 60V 10A TO277A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSP10U60S Cut Tape 7,732 1
    • 1 $0.66
    • 10 $0.569
    • 100 $0.3936
    • 1000 $0.27989
    • 10000 $0.24928
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    TSP10U60S Reel 6,000 6,000
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    • 10000 $0.23616
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    TSP10U60S Digi-Reel 1
    • 1 $0.66
    • 10 $0.569
    • 100 $0.3936
    • 1000 $0.27989
    • 10000 $0.24928
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    Avnet Americas TSP10U60S Reel 16 Weeks 6,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.24248
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    Mouser Electronics TSP10U60S 2,882
    • 1 $0.66
    • 10 $0.569
    • 100 $0.428
    • 1000 $0.428
    • 10000 $0.236
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    Future Electronics TSP10U60S 16 Weeks 6,000
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    • 10000 $0.225
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    EBV Elektronik TSP10U60S 12,000 18 Weeks 6,000
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    Taiwan Semiconductor TSP10U60S S1G

    Diode Schottky 60V 10A 3-Pin TO-277A T/R - Tape and Reel (Alt: TSP10U60S S1G)
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    Avnet Americas TSP10U60S S1G Reel 6,000
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    Mouser Electronics TSP10U60S S1G
    • 1 -
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    • 10000 $0.507
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    TSC Electronics Ltd TSP10U60SS1G

    TRENCH SCHOTTKY RECTIFIER Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 60V V(RRM), Silicon, TO-277A
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    ComSIT USA TSP10U60SS1G 3,000
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    TSP10U60S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSP10U60S S1G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 60V 10A TO277A Original PDF

    TSP10U60S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TSP10U60S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original
    PDF TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1311023

    Untitled

    Abstract: No abstract text available
    Text: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original
    PDF TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1311023

    Untitled

    Abstract: No abstract text available
    Text: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original
    PDF TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408043