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    Taiwan Semiconductor TSF10U60C

    DIODE ARR SCHOTT 60V 5A ITO220AB
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    TSF10U60C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSF10U60C C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 60V ITO220AB Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary TSF10U60C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package


    Original     		PDF ITO-220AB TSF10U60C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408024

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311017

    Untitled

    Abstract: No abstract text available
    Text: TSF10U45C thru TSF10U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF10U45C TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401030