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    TSF20H150C Search Results

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    TSF20H150C Price and Stock

    Taiwan Semiconductor TSF20H150C

    DIODE ARR SCHOTT 150V ITO220AB
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    DigiKey TSF20H150C Tube 2 1
    • 1 $0.89
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    Avnet Americas TSF20H150C Tube 1,000
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    • 10000 $0.51626
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    Mouser Electronics TSF20H150C
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    Future Electronics TSF20H150C 1,000
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    Taiwan Semiconductor TSF20H150C-S

    DIODE SCHOTTKY 150V 10A ITO220AB
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    DigiKey TSF20H150C-S Tube 1,000
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    Avnet Americas TSF20H150C-S Tube 1,000
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    Mouser Electronics TSF20H150C-S
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    Taiwan Semiconductor TSF20H150C C0

    - Rail/Tube (Alt: TSF20H150C C0)
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    Avnet Americas TSF20H150C C0 Tube 1,000
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    Taiwan Semiconductor TSF20H150C C0G

    Diode Schottky 150V 20A 3-Pin(3+Tab) ITO-220AB Tube
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    Verical TSF20H150C C0G 494 20
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    TSF20H150C C0G 470 196
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    Arrow Electronics TSF20H150C C0G 494 99 Weeks 1
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    TSF20H150C C0G 470 196
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    TSF20H150C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSF20H150C C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 150V ITO220AB Original PDF
    TSF20H150C-S C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 150V 10A ITO220AB Original PDF

    TSF20H150C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307013

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original     		PDF TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1310028

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		PDF TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309049

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		PDF TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original     		PDF TSF20H100C TSF20H200C 2011/65/EU 2002/96/EC ITO-220AB D1404001