Untitled
Abstract: No abstract text available
Text: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)
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DTC144TU/DTC144TK/DTC144TS/DTC144TF
DTC144TL/DTC144TA/
DTC144TV
144TS
144TL/D
144TA
DTC144T
DTC144TL/DTC144TA/DTC144TV
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Untitled
Abstract: No abstract text available
Text: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter
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DTA144VU
TA144VKA
TA144VSA
DTA144VUA
DTA144VKA
DTA144VSA
0Dlb713
O-220FN
O-220FN
O220FP
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marking tA2
Abstract: No abstract text available
Text: D TA 144V U A / D TA 144V K A / D TA 144VS A Transistors D TC 144V U A / D TC 144V K A / D TC 144V S A I Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA •F eatures 1 ) Built-in bias resistors enable the configuration of an inverter
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144VS
DTA144VKA
144VSA
DTA144VUA
DTA144VSA
-698-C
marking tA2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V IXBH12N300 IXBT12N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 VCGR
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IC110
IXBH12N300
IXBT12N300
O-247
12N300
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IC110
IXBH20N300
IXBT20N300
O-247
20N300
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32N30
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V IXBH32N300 IXBT32N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IC110
IXBH32N300
IXBT32N300
O-247
32N300
32N30
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE sat ≤ tfi = 1700V 21A 6.0V 20ns TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBT42N170A
IXBH42N170A
O-268
O-247
42N170A
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IXBH20N300
Abstract: 20N30 B20N30
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH20N300 IXBT20N300 VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IXBH20N300
IXBT20N300
IC110
O-247
20N300
IXBH20N300
20N30
B20N30
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ixbh12n300
Abstract: transistor TO-247 Outline Dimensions
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH12N300 IXBT12N300 VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IXBH12N300
IXBT12N300
IC110
O-247
12N300
ixbh12n300
transistor TO-247 Outline Dimensions
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IXBH32N300
Abstract: B32N 32N30 IXBT32N300 32N300
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IXBH32N300
IXBT32N300
IC110
O-247
32N300
IXBH32N300
B32N
32N30
IXBT32N300
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d 42030 transistor
Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A
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BUT11/11A
O-220
BUT11
BUT11A
BUT11
AN-758:
AN-758
d 42030 transistor
AN-7505
220v ac to 48v dc smps
AN3008 Fairchild
crt horizontal deflection circuit
AN-7528
9019 transistor
FAN6800
BUT11A spice
AN817
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pt 4115 led driver
Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage
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BUT12/12A
O-220
BUT12
BUT12A
KM4211-PB:
KM4211
FAN5231-PB:
pt 4115 led driver
AN-7527
an7527
an5043
AN-7501
AN-7502
AN42045
transistor k 4110
PC100 NPN
ML4425
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IRGP4660
Abstract: IRGP4660D-EPBF
Text: IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive
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IRGP4660DPbF
IRGP4660D-EPbF
O-247AC
IRGP4660DPbF
O-247AD
IRGP4660D-EP
IRGP4660DPbF/IRGP4660D-EPbF
JESD22-A114)
IRGP4660
IRGP4660D-EPBF
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IXBH16N170
Abstract: 16N170 IXBT16N170
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBH16N170
IXBT16N170
O-247
16N170
IXBH16N170
IXBT16N170
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Untitled
Abstract: No abstract text available
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor Extended FBSOA VCES = 2500V IC110 = 36A VCE sat ≤ 3.3V IXCH36N250 IXCK36N250 TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXCH36N250
IXCK36N250
O-247
O-264
100ms
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Untitled
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V IXBH16N170 IXBT16N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBH16N170
IXBT16N170
O-247
16N170
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IXBH12N300
Abstract: IXBT12N300
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = 3000V IC110 = 12A VCE sat ≤ 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBT12N300
IXBH12N300
IC110
O-268
IC110
O-247
12N300
IXBH12N300
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IXBH6N170
Abstract: IXBT6N170
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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IXBH6N170
IXBT6N170
O-247
O-268
6N170
IXBT6N170
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Untitled
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 42A VCE sat ≤ 2.8V IXBH42N170 IXBT42N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBH42N170
IXBT42N170
O-247
42N170
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20A400
Abstract: IXBH20N300 IXBT20N300
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH20N300 IXBT20N300 VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBH20N300
IXBT20N300
IC110
O-268
IC110
O-247
20N300
20A400
IXBT20N300
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6N170
Abstract: IXBH6N170 IXBT6N170 9632ns
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700
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IXBH6N170
IXBT6N170
O-247
6N170
IXBH6N170
IXBT6N170
9632ns
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IXCH36N250
Abstract: 36N250 IXCK36N250 transistor ad 162 transistor TO-264 Outline Dimensions
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor Extended FBSOA IXCH36N250 IXCK36N250 VCES = 2500V IC110 = 36A VCE sat ≤ 3.3V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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IXCH36N250
IXCK36N250
IC110
O-247
IC110
O-264
100ms
36N250
IXCK36N250
transistor ad 162
transistor TO-264 Outline Dimensions
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IXBT42N170
Abstract: IXBH42N170 siemens ups b42 transistor 537 b 360
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = 1700V IC90 = 42A VCE sat ≤ 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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Original
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IXBH42N170
IXBT42N170
O-247
42N170
IXBT42N170
IXBH42N170
siemens ups b42
transistor 537 b 360
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Untitled
Abstract: No abstract text available
Text: IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A G IRGP4760DPbF TO-247AC E n-channel Applications
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IRGP4760DPbF
IRGP4760D-EPbF
IRGP4760DPbFÂ
247ACÂ
IRGP4760Dâ
247ADÂ
IRGP4760DPbF/IRGP4760D-EPbF
O-247AC
JESD47F)
O-247AD
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