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    16N170 Search Results

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    16N170 Price and Stock

    IXYS Corporation IXGH16N170

    IGBT NPT 1700V 32A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH16N170 Tube 2,549 1
    • 1 $10.62
    • 10 $10.62
    • 100 $6.727
    • 1000 $10.62
    • 10000 $10.62
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    Mouser Electronics IXGH16N170 984
    • 1 $9.65
    • 10 $9.54
    • 100 $8.25
    • 1000 $7.22
    • 10000 $6.5
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    Newark IXGH16N170 Bulk 433 1
    • 1 $11.93
    • 10 $11.13
    • 100 $9.53
    • 1000 $8.52
    • 10000 $8.52
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    TTI IXGH16N170 Tube 300 30
    • 1 -
    • 10 -
    • 100 $8.61
    • 1000 $8.61
    • 10000 $8.61
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    TME IXGH16N170 1
    • 1 $11.04
    • 10 $9.13
    • 100 $8.8
    • 1000 $8.8
    • 10000 $8.8
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    Chip-Germany GmbH IXGH16N170 72
    • 1 -
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    IXYS Corporation IXYH16N170C

    IGBT 1.7KV 40A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH16N170C Tube 1,217 1
    • 1 $8.82
    • 10 $8.82
    • 100 $5.51533
    • 1000 $4.71763
    • 10000 $4.71763
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    Mouser Electronics IXYH16N170C 298
    • 1 $9.07
    • 10 $8.36
    • 100 $7.14
    • 1000 $5.71
    • 10000 $4.83
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    TTI IXYH16N170C Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.14
    • 10000 $6.14
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    TME IXYH16N170C 1
    • 1 $11.25
    • 10 $8.93
    • 100 $8.03
    • 1000 $8.03
    • 10000 $8.03
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    IXYS Corporation IXGT16N170A

    IGBT NPT 1700V 16A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT16N170A Tube 556 1
    • 1 $16.47
    • 10 $16.47
    • 100 $10.782
    • 1000 $16.47
    • 10000 $16.47
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    Mouser Electronics IXGT16N170A 3,120
    • 1 $18.1
    • 10 $17.73
    • 100 $11.61
    • 1000 $10.34
    • 10000 $10.34
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    TTI IXGT16N170A Tube 300 30
    • 1 -
    • 10 -
    • 100 $14.06
    • 1000 $14.06
    • 10000 $14.06
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    TME IXGT16N170A 1
    • 1 $14.99
    • 10 $11.91
    • 100 $10.67
    • 1000 $10.67
    • 10000 $10.67
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    IXYS Corporation IXBH16N170

    IGBT 1700V 40A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH16N170 Tube 374 1
    • 1 $13.16
    • 10 $13.16
    • 100 $8.473
    • 1000 $13.16
    • 10000 $13.16
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    Mouser Electronics IXBH16N170 884
    • 1 $13.26
    • 10 $12.39
    • 100 $10.72
    • 1000 $9.16
    • 10000 $9.16
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    TTI IXBH16N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.65
    • 10000 $9.65
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    TME IXBH16N170 1
    • 1 $14.55
    • 10 $11.47
    • 100 $10.84
    • 1000 $10.84
    • 10000 $10.84
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    New Advantage Corporation IXBH16N170 62 1
    • 1 -
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    • 100 $21.56
    • 1000 $21.56
    • 10000 $21.56
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    IXYS Corporation IXYH16N170CV1

    IGBT 1.7KV 40A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH16N170CV1 Tube 294 1
    • 1 $10.94
    • 10 $10.94
    • 100 $6.94833
    • 1000 $10.94
    • 10000 $10.94
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    Mouser Electronics IXYH16N170CV1
    • 1 $8.37
    • 10 $8.37
    • 100 $6.68
    • 1000 $6.19
    • 10000 $6.19
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    TTI IXYH16N170CV1 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.2
    • 10000 $6.2
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    TME IXYH16N170CV1 1
    • 1 $14.88
    • 10 $11.69
    • 100 $10.54
    • 1000 $10.54
    • 10000 $10.54
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    16N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    752 J 1600 V CAPACITOR

    Abstract: 16N170 BiMOSFET
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 16N170 O-268 O-247 752 J 1600 V CAPACITOR 16N170 BiMOSFET

    Untitled

    Abstract: No abstract text available
    Text: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


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    PDF 16N170 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 16N170A 728B1

    smd diode 819

    Abstract: 16N170A mos 1200v to-247
    Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20


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    PDF 16N170A 728B1 123B1 728B1 065B1 smd diode 819 16N170A mos 1200v to-247

    16N170A

    Abstract: TO-247 weight IXGH16N170A
    Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 16N170A 728B1 TO-247 weight IXGH16N170A

    ixys ixgh 16n170

    Abstract: S60A 16N170 DS98996
    Text: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


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    PDF 16N170 O-247 O-268 728B1 ixys ixgh 16n170 S60A DS98996

    16N170AH1

    Abstract: 16N170A robot control 16N170
    Text: Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700


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    PDF 16N170A 16N170AH1 O-247 405B2 16N170A robot control 16N170

    16N170AH1

    Abstract: 16N170A IXGT16N170A IXGH16N170AH1
    Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 16N170A 16N170AH1 16N170AH1 16N170A IXGT16N170A IXGH16N170AH1

    16n170

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


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    PDF 16N170 O-247 O-268 728B1 123B1 728B1 065B1 16N170

    16N170A

    Abstract: diode 22 161 smd
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 16N170A 16N170A diode 22 161 smd

    ixys ixgh 16n170

    Abstract: 16N170 IXGH 16N170 PF752
    Text: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


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    PDF 16N170 O-268 O-247 ixys ixgh 16n170 16N170 IXGH 16N170 PF752

    752 C 1600 V CAPACITOR

    Abstract: 16N170
    Text: High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


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    PDF 16N170 O-268 O-247 752 C 1600 V CAPACITOR

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous


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    PDF 16N170A 16N170A O-268 O-247

    A1540

    Abstract: rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1
    Text: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


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    PDF 16N170AH1 ISOPLUS247 E153432 minute00 405B2 A1540 rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1

    ad 161 transistor

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF 16N170 16N170 O-268 O-247 ad 161 transistor

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 16N170A 16N170AH1 W1700

    16N170

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF 16N170A 16N170A O-268 O-247 16N170

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT w/ Sonic Diode 16N170A 16N170A 16N170AH1 16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M


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    PDF IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 338B2

    IXGH16N170A

    Abstract: IXGT16N170A
    Text: 16N170A 16N170A 16N170AH1 16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M


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    PDF IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 16N170A DH10A-1800PA IXGH16N170A IXGT16N170A

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    40N160

    Abstract: 16N170
    Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33


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    PDF 16N170A 16N170 42N170 40N160 9N160 15N140

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6