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    IXBH42N170 Search Results

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    IXBH42N170 Price and Stock

    IXYS Corporation IXBH42N170

    IGBT 1700V 80A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH42N170 Tube 792 1
    • 1 $24.46
    • 10 $24.46
    • 100 $15.644
    • 1000 $24.46
    • 10000 $24.46
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    Mouser Electronics IXBH42N170 718
    • 1 $20.83
    • 10 $20.73
    • 100 $14.6
    • 1000 $14.59
    • 10000 $14.59
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    Future Electronics IXBH42N170 Tube 300
    • 1 $15.03
    • 10 $14.83
    • 100 $14.56
    • 1000 $14.31
    • 10000 $14.31
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    IXBH42N170 Bulk 1
    • 1 $15.38
    • 10 $15.18
    • 100 $14.9
    • 1000 $14.65
    • 10000 $14.65
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    Quest Components IXBH42N170 48
    • 1 $42.696
    • 10 $42.696
    • 100 $36.2916
    • 1000 $36.2916
    • 10000 $36.2916
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    TTI IXBH42N170 Tube 150 30
    • 1 -
    • 10 -
    • 100 $14.6
    • 1000 $14.6
    • 10000 $14.6
    		Buy Now
    TME IXBH42N170 1
    • 1 $27.75
    • 10 $22.03
    • 100 $20.47
    • 1000 $20.47
    • 10000 $20.47
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    New Advantage Corporation IXBH42N170 337 1
    • 1 -
    • 10 -
    • 100 $41.03
    • 1000 $38.29
    • 10000 $38.29
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    IXYS Corporation IXBH42N170A

    IGBT 1700V 42A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH42N170A Tube 146 1
    • 1 $23.69
    • 10 $23.69
    • 100 $16.22
    • 1000 $16.22
    • 10000 $16.22
    		Buy Now
    Mouser Electronics IXBH42N170A 338
    • 1 $24.28
    • 10 $20
    • 100 $18.91
    • 1000 $17.66
    • 10000 $17.66
    		Buy Now
    TTI IXBH42N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $18.59
    • 10000 $18.59
    		Buy Now
    TME IXBH42N170A 60 1
    • 1 $25.15
    • 10 $21.1
    • 100 $20.37
    • 1000 $20.37
    • 10000 $20.37
    		Buy Now
    New Advantage Corporation IXBH42N170A 48 1
    • 1 -
    • 10 $42.23
    • 100 $39.41
    • 1000 $39.41
    • 10000 $39.41
    		Buy Now

    Littelfuse Inc IXBH42N170

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBH42N170
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBH42N170 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.3
    • 10000 $15.3
    		Buy Now
    RS IXBH42N170 Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $22.58
    • 1000 $22.58
    • 10000 $22.58
    		Get Quote

    Littelfuse Inc IXBH42N170A

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBH42N170A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBH42N170A Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $17
    • 10000 $17
    		Buy Now
    RS IXBH42N170A Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $25.09
    • 1000 $25.09
    • 10000 $25.09
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    IXYS Integrated Circuits Division IXBH42N170

    IGBT DIS.DIODE SINGLE 42A 1700V BIMOSFET TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBH42N170 437
    • 1 $30.47146
    • 10 $30.47146
    • 100 $28.478
    • 1000 $28.478
    • 10000 $28.478
    		Buy Now
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    IXBH42N170 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBH42N170 IXYS 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor Original PDF
    IXBH42N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 80A 360W TO247 Original PDF
    IXBH 42N170 IXYS TRANS IGBT CHIP N-CH 1700V 75A 3TO-247 AD Original PDF
    IXBH42N170A IXYS Discrete IGBTs Original PDF
    IXBH42N170A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 42A 357W TO247 Original PDF
    IXBH 42N170A IXYS BIMOSFET Monolithic Bipolar MOS Transistor Original PDF
    IXBH42N170ASN IXYS BIMOSFET Monolithic Bipolar MOS Transistor Original PDF

    IXBH42N170 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 42A VCE sat ≤ 2.8V IXBH42N170 IXBT42N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBH42N170 IXBT42N170 O-247 42N170 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE sat ≤ tfi = 1700V 21A 6.0V 20ns TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBT42N170A IXBH42N170A O-268 O-247 42N170A PDF

    IXBT42N170

    Abstract: IXBH42N170 siemens ups b42 transistor 537 b 360
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = 1700V IC90 = 42A VCE sat ≤ 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBH42N170 IXBT42N170 O-247 42N170 IXBT42N170 IXBH42N170 siemens ups b42 transistor 537 b 360 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF