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    IXBH6N170 Search Results

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    IXBH6N170 Price and Stock

    IXYS Corporation IXBH6N170

    IGBT 1700V 12A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH6N170 Tube 299 1
    • 1 $11.95
    • 10 $11.95
    • 100 $9.536
    • 1000 $7.52849
    • 10000 $6.77564
    		Buy Now
    Mouser Electronics IXBH6N170 188
    • 1 $11.95
    • 10 $11
    • 100 $9.4
    • 1000 $7.25
    • 10000 $6.77
    		Buy Now
    Future Electronics IXBH6N170 Tube 24 Weeks 30
    • 1 -
    • 10 -
    • 100 $7.09
    • 1000 $7.09
    • 10000 $7.09
    		Buy Now
    TTI IXBH6N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.17
    • 10000 $8.17
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    TME IXBH6N170 1
    • 1 $8.67
    • 10 $7.27
    • 100 $7.01
    • 1000 $7.01
    • 10000 $7.01
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    New Advantage Corporation IXBH6N170 436 1
    • 1 -
    • 10 -
    • 100 $15.21
    • 1000 $14.2
    • 10000 $14.2
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    Littelfuse Inc IXBH6N170

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBH6N170
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBH6N170 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.51
    • 10000 $6.51
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    IXYS Integrated Circuits Division IXBH6N170

    IGBT DIS.DIODE SINGLE 6A 1700V BIMOSFET TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBH6N170 536
    • 1 $11.36169
    • 10 $11.36169
    • 100 $10.6184
    • 1000 $10.6184
    • 10000 $10.6184
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    IXBH6N170 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXBH6N170 IXYS Discrete IGBTs Original PDF
    IXBH6N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 12A 75W TO247AD Original PDF
    IXBH 6N170 IXYS High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF
    IXBH6N170SN IXYS High Voltage: High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF

    IXBH6N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		PDF IXBH6N170 IXBT6N170 O-247 6N170

    IXBH6N170

    Abstract: IXBT6N170
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		PDF IXBH6N170 IXBT6N170 O-247 O-268 6N170 IXBT6N170

    6N170

    Abstract: IXBH6N170 IXBT6N170 9632ns
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		PDF IXBH6N170 IXBT6N170 O-247 6N170 IXBH6N170 IXBT6N170 9632ns