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    IXBT6N170 Search Results

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    IXBT6N170 Price and Stock

    IXYS Corporation IXBT6N170

    IGBT 1700V 12A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBT6N170 Tube 295 1
    • 1 $9.12
    • 10 $6.409
    • 100 $6.409
    • 1000 $6.409
    • 10000 $6.409
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    Mouser Electronics IXBT6N170 298
    • 1 $8.98
    • 10 $7.62
    • 100 $7.4
    • 1000 $7.4
    • 10000 $7.22
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    Future Electronics IXBT6N170 Tube 35 Weeks 300
    • 1 -
    • 10 -
    • 100 $8.15
    • 1000 $8.02
    • 10000 $8.02
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    TTI IXBT6N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.5
    • 10000 $7.5
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    TME IXBT6N170 1
    • 1 $9.3
    • 10 $7.8
    • 100 $7.41
    • 1000 $7.41
    • 10000 $7.41
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    New Advantage Corporation IXBT6N170 376 1
    • 1 -
    • 10 -
    • 100 $18.13
    • 1000 $16.92
    • 10000 $16.92
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    Littelfuse Inc IXBT6N170

    Disc Igbt Bimosfet-High Volt To-268Aa/ Tube |Littelfuse IXBT6N170
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBT6N170 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.76
    • 10000 $7.76
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    IXYS Integrated Circuits Division IXBT6N170

    IGBT DIS.DIODE SINGLE 6A 1700V BIMOSFET TO268(D3PA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBT6N170 476
    • 1 $13.54427
    • 10 $13.54427
    • 100 $12.6582
    • 1000 $12.6582
    • 10000 $12.6582
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    IXBT6N170 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXBT 6N170 IXYS High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF
    IXBT6N170 IXYS High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF
    IXBT6N170 IXYS High Voltage, High Gain Bipolar MOS Transistor Original PDF
    IXBT6N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 12A 75W TO268 Original PDF

    IXBT6N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		PDF IXBH6N170 IXBT6N170 O-247 6N170

    IXBH6N170

    Abstract: IXBT6N170
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		PDF IXBH6N170 IXBT6N170 O-247 O-268 6N170 IXBT6N170

    6N170

    Abstract: IXBH6N170 IXBT6N170 9632ns
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		PDF IXBH6N170 IXBT6N170 O-247 6N170 IXBH6N170 IXBT6N170 9632ns