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    TRANSISTOR T330 Search Results

    TRANSISTOR T330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFW17A

    Abstract: bfw17a philips semiconductor lem HA
    Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good


    OCR Scan     		PDF BFW17A 711Dfl2b D04fc 0D4b025 BFW17A bfw17a philips semiconductor lem HA

    trr 30-06xx2

    Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
    Text: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex


    OCR Scan     		PDF 25-10xx2 30-06xx2 50-06xx2 50-10xx2 50-12xx2 75-10xx2 100-10XX2 100-12xx2 150-10xx2 200-10xx2 trr 30-06xx2 30-06xx2 TRR25-10XX2 II10-04L5

    BFR65

    Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
    Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.


    OCR Scan     		PDF BFQ34 btS3T31 BFR65 BFR65 multi-emitter transistor n 431 transistor Transistor PJ 431

    BFR64

    Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
    Text: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.


    OCR Scan     		PDF BFQ34 BFR64 7z72605 BFR64 multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798

    2sa 940

    Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
    Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are


    OCR Scan     		PDF 2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu

    transistor rf cm 1104

    Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
    Text: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and


    OCR Scan     		PDF BLY92A T-33-Of transistor rf cm 1104 BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971

    BLX93A

    Abstract: No abstract text available
    Text: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF 7110flEb BLX93A 711002b 002705b T-33-07 BLX93A

    bly87a

    Abstract: transistor c 1974
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D H 73,1002b 0 0 2 7 ^ 3 T B P H I N BLY87A T-33-07 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF 1002b BLY87A T-33-07 --j16 bly87a transistor c 1974

    BLY88A

    Abstract: A41E BLY88 W1032 Paver Components
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF DQ57R27 BLY88A to-16 BLY88A A41E BLY88 W1032 Paver Components

    BFR134

    Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
    Text: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar


    OCR Scan     		PDF BFR134 BFR134 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944

    BLX93A

    Abstract: high power npn UHF transistor BLX93 T-33-07 TRANSISTOR D 471 IEC134 47pH
    Text: PH IL IR-S INTERNATIONAL MIE D Q 71LOä2b GG27àM7 3 B PHIN BLX93A MA IN TE N AN CE TYPE ^ - T -3 3 -Û 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX93A -T-33-Ã 470series BLX93A high power npn UHF transistor BLX93 T-33-07 TRANSISTOR D 471 IEC134 47pH

    transistor BD 800

    Abstract: transistor BD 110
    Text: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


    OCR Scan     		PDF A235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 800 transistor BD 110

    BFQ234/I

    Abstract: BFQ234 BFQ254
    Text: Philips Semiconductors Product specification - T Z33-05 NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION BFQ234; BFQ234/I D ShE ' PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and


    OCR Scan     		PDF OT172 OT172A3 BFQ234 OT172A1 BFQ234/I ---t-33-05 BFQ234; BFQ234/I 7110fleb BFQ254

    transistor rf cm 1104

    Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
    Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLY92A T-33-Ã OT-48/2. transistor rf cm 1104 BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor

    BFP96

    Abstract: 880 411 000 GG45 BFQ32C Philips MBB D 1944 npn SOT173 BFP96 P6
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 7^ 33 SbE D • BFP96 7 11 D Ô S L DD4537M ■PHIN 7ÔG PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.


    OCR Scan     		PDF BFP96 711DflSh DD4537M OT173 OT173X BFQ32C. BFP96 880 411 000 GG45 BFQ32C Philips MBB D 1944 npn SOT173 BFP96 P6

    BFG34

    Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
    Text: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband


    OCR Scan     		PDF BFG34 OT103 ON4497) OT103. BFG34 ON4497 TRANSISTOR 185 846 TRANSISTOR 726

    Untitled

    Abstract: No abstract text available
    Text: -T~35>~OS MSB11900Y M AINTENANC E TYPE PHILIPS i n t e r n a t i o n a l 5bE D • 7110aEb ÜDMbBBß b37 H P H I N - PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor tw o transistor sections intended fo r use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.0 9MHz.


    OCR Scan     		PDF MSB11900Y 7110aEb 2x1000

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors _ - NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION _ Product specification - 7^ 3 3 - 0 5 BFQ268; BFQ268/1 SbE D m 71106Bb DG45bS7 344 H P H I N PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a


    OCR Scan     		PDF BFQ268; BFQ268/1 71106Bb DG45bS7 BFQ268 T-33-05 ------BFQ268; BFQ268/I

    transistor d 1710

    Abstract: BFP96 1351 NPN TRANSISTOR transistor B 892 b 1624 transistor BFP96 P6 TRANSISTOR C 557 B transistor 1548 b D 1944 npn transistor 1548
    Text: Philips S em iconductors Product specification T=33 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • BFP96 711DÔSL DD4537M 7ÔG ■ P H I N PINNING NPN transistor in hermetically sealed sub-mlnlature SOT173 and SOT173X micro-stripline envelopes.


    OCR Scan     		PDF OT173 OT173X BFQ32C. BFP96 DD4537M frequen720 transistor d 1710 BFP96 1351 NPN TRANSISTOR transistor B 892 b 1624 transistor BFP96 P6 TRANSISTOR C 557 B transistor 1548 b D 1944 npn transistor 1548

    2322-712

    Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
    Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for


    OCR Scan     		PDF OT103 33-OS BFG134 Q04S2014 OT103. 2322-712 BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor

    BFQ268

    Abstract: No abstract text available
    Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with


    OCR Scan     		PDF BFQ268; BFQ268/1 711002t) BFQ268 OT172A1) BFQ268/I OT172A3 BFQ268/I 004SbbD

    bfr95 philips

    Abstract: bfr95
    Text: Product specification Philips Sem iconductors 7- 3 3 ' O S NPN 3.5 GHz wideband transistor DESCRIPTION 711002b D0M5773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.


    OCR Scan     		PDF

    BFR95

    Abstract: 1 Fp 33 transistor bfr95 philips QDHS773 D2 144 transistor
    Text: Product specification Philips Semiconductors r^ 3 3 -o s NPN 3.5 GHz wideband transistor DESCRIPTION 711062b QDHS773 H76 M P H I N SbE D PHILIPS INTERNATIONAL BFR95 PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.


    OCR Scan     		PDF BFR95 711002b QDHS773 MBB199 BFR95 1 Fp 33 transistor bfr95 philips D2 144 transistor