BFQ251
Abstract: BFQ252 BFQ256 X3A-BFQ254
Text: bbS3T31 Q032210 30S M APX Philips Semiconductors Product specification PNP 1 GHz video transistor crystal ^ X3A-BFQ254 N AMER pHILIPS/ilSCRETE b'iE D " MECHANICAL DATA DESCRIPTION Crystal PNP crystal used in BFQ251 TO-92 , BFQ252(A) (SOT32) and BFQ256(A) (SOT223). Crystals are
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bbS3T31
QQ3221G
X3A-BFQ254
BFQ251
BFQ252
BFQ256
OT223)
X3A-BFQ254
URV-3-5-52/733
BFQ251
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Untitled
Abstract: No abstract text available
Text: bb53T31 0032210 30S Philips Semiconductors M APX Product specification PNP 1 GHz video transistor crystal ^ X3A-BFQ254 N AMER pniLIPS/DISCRETE b'lE D • MECHANICAL DATA DESCRIPTION Crystal PNP crystal used in BFQ251 TO-92 , BFQ252(A) (SOT32) and BFQ256(A) (SOT223). Crystals are
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bb53T31
X3A-BFQ254
BFQ251
BFQ252
BFQ256
OT223)
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BFQ252
Abstract: q 1257 BFQ251 bfq256 X3A-BFQ254
Text: Philips Semiconductors Product sgecjfication T -S I'ÌO PNP 1 GHz video transistor crystal SbE PHILIPS INTERNATIONAL D • X3A-BFQ254 □□4blGQ Ô47 H P H I N 711042b M E C H A N IC A L DATA DESCRIPTION Crystal P N P crystal used in BFQ251 TO-92 , BFQ252(A)
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BFQ251
BFQ252
BFQ256
OT223)
X3A-BFQ254
7110fi2b
X3A-BFQ254
URV-3-5-52/733
q 1257
BFQ251
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BFQ254
Abstract: BFQ234 UBB692 sot172a3
Text: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,
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33-/Z
BFQ254;
BFQ254/I
711062b
D045b3D
OT172A1
OT172A3
BFQ254
OT172A1)
BFQ254/I
BFQ234
UBB692
sot172a3
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Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
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BFQ254;
BFQ254/I
OT172A1
OT172A3
BFQ254
bbS3T31
MB3693
MEA335
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BFQ234
Abstract: BFQ25 BFQ254 transistor YA
Text: Philips Components bfq254 _ J >- PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down
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bfq254
BFQ234.
BFQ25
OT172A1.
8-32UNC
M90-1191/Y
BFQ234
BFQ254
transistor YA
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motorola transistor 5331
Abstract: BFQ254 BFQ234
Text: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and
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00317m
BFQ254;
BFQ254/1
OT172A1
OT172A3
BFQ254
OT172A1)
BFQ254/I
0Q3174M
motorola transistor 5331
BFQ234
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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BFQ161
Abstract: SOT37
Text: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO
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OT-323
OT-37
OT-23
BFQ161
SOT37
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BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
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OM3016
OM3026
OM925
OM925
OM975
OM976
BFQ231
BFQ231A
BFQ251
BLY32
blf278 108 amplifier
Philips Application BLX15
RF Power Amplifiers
bgy55
blw95
BLF543
BFQ43
BLW33
blf177 108 amplifier
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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sot37
Abstract: sot-37 T173 RE SOT
Text: Small Signal Leaded Devices W ideband Transistors c o n t. hFE Ratings Type v CEO V v CBO V *c mA TO-39 TO-72 SOT-37 SOT-37 SOT-37 TO-72 25 10 15 15 10 15 40 20 25 25 18 30 150 50 25 25 50 25 SOT-103 SOT-37 SO T-173 TO-72 SOT-37 SO T-173 TO-72 SOT-37 SOT-37
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BFW17A
BFW30
BFW92
BFW92A
BFW93
BFY90
BFG32
BFQ23
BFQ23C
BFQ24
sot37
sot-37
T173
RE SOT
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors ^ 5 3 ^ 3 1 0031714 b?fl • APX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I N Af1ER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and
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BFQ234;
BFQ234/I
172A1
172A3
003171b
M38680
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BFQ234
Abstract: BFQ254 UBB364 SOT-172A
Text: Philips Semiconductors L jb £ 3 ^ 3 1 0Q31714 b7fl BBAPX NPN 1 GHz video transistor Product specification BFQ234; BFQ234/I b'lE T> N Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and
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00317m
BFQ234;
BFQ234/I
OT172A1
OT172A3
BFQ234
OT172A1)
BFQ234/I
bbS3T31
BFQ254
UBB364
SOT-172A
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128-B
Abstract: SOT128B bfq162
Text: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A
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BFQ161
BFQ162
BFQ163
BFQ166
BFQ231
BFQ231A
BFQ232
BFQ232A
BFQ233
BFQ233A
128-B
SOT128B
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