SMD TRANSISTOR MARKING 5c
Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A
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BC856W=
BC857W=
BC858W=
BC856AW-G
BC858CW-G
OT-323
OT-323,
MIL-STD-750,
QW-BTR36
SMD TRANSISTOR MARKING 5c
smd transistor 5c
TRANSISTOR SMD MARKING CODE 5c
TRANSISTOR SMD MARKING CODE 3f
transistor smd code marking 101
transistor smd code marking 102
TRANSISTOR SMD MARKING CODE 3G
5c smd transistor
TRANSISTOR SMD MARKING CODE 3L
SMD TRANSISTOR MARKING 3B
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transistor 9575
Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10-160RN;
BLF6G10LS-160RN
BLF6G10-160RN
10LS-160RN
transistor 9575
BLF6G10LS-160RN
RF35
w2 smd transistor
smd transistor f3 65
CAPACITOR 330 NF
Capacitor 27 p-F 1
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BLF6G22LS-100
Abstract: RF35 TRANSISTOR SMD BV
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
BLF6G22LS-100
RF35
TRANSISTOR SMD BV
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BLF6G20-110
Abstract: BLF6G20LS-110 RF35
Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-110;
BLF6G20LS-110
BLF6G20-110
BLF6G20LS-110
RF35
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2360d
Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST
Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10-135RN;
BLF6G10LS-135RN
BLF6G10-135RN
10LS-135RN
2360d
BLF6G10LS-135RN
RF35
SMD TRANSISTOR LIST
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D2375
Abstract: BLF6G10S-45 RF35
Text: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10S-45
BLF6G10S-45
D2375
RF35
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RF35
Abstract: No abstract text available
Text: BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-180RN;
BLF6G20LS-180RN
BLF6G20-180RN
20LS-180RN
RF35
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BLF6G22LS-100
Abstract: RF35
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF6G22LS-100
BLF6G22LS-100
RF35
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transistor SMD g 28
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
transistor SMD g 28
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C4532X7R1E475M
Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
Text: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22LS-130
BLF6G22LS-130
C4532X7R1E475M
AVX12065C224K
GRM217BR71H104KA11L
RO4350B
capacitor 220 uf
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BLF6G10LS-135R
Abstract: f4 smd transistor mobile rf power amplifier transistor RF35 2360d
Text: BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10LS-135R
BLF6G10LS-135R
f4 smd transistor
mobile rf power amplifier transistor
RF35
2360d
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
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Untitled
Abstract: No abstract text available
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.
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BLC8G27LS-160AV
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Nordmende
Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
Text: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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BLF8G20LS-230V
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SMD Transistor W10
Abstract: sample programs using C in TMS320C6713 DSK sample programs using C in TMS320VC5510 DSK DSK 6713 TMS320C6711 dsk TMS320C6713 DSK kit circuit diagram ADS1605-C6713 SSW-120 TMS320C6713 DSP kit circuit diagram TMS320C6713 DSK module
Text: ADS1605 and ADS1606 EVM User’s Guide April 2004 Data Acquistion SLAU122A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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ADS1605
ADS1606
SLAU122A
220uH
17-Nov-2003
SMD Transistor W10
sample programs using C in TMS320C6713 DSK
sample programs using C in TMS320VC5510 DSK
DSK 6713
TMS320C6711 dsk
TMS320C6713 DSK kit circuit diagram
ADS1605-C6713
SSW-120
TMS320C6713 DSP kit circuit diagram
TMS320C6713 DSK module
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2305 transistor
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
2305 transistor
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2395 transistor
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
2395 transistor
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BLF4G22-100
Abstract: BLF4G22S-100 RF35
Text: BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance
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BLF4G22-100;
BLF4G22S-100
BLF4G22-100
BLF4G22S-100
RF35
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tea1719
Abstract: PH1930 nds 3 video guard smart card OPTOCOUPLER SMPS for HDD ph1930al PH2530AL ip4223 SMD 8A TRANSISTOR 702 transistor smd code PH6030AL
Text: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,
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BLF4G22-130
Abstract: BLF4G22LS-130 RF35
Text: BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor Rev. 01 — 3 July 2007 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF4G22-130;
BLF4G22LS-130
BLF4G22-130
4G22LS-130
BLF4G22LS-130
RF35
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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smd transistor g28
Abstract: transistor SMD g28
Text: ACPM-5008-TR1 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5008-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band8. The ACPM-5008-TR1 meets stringent linearity requirements up to 28.5dBm output
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ACPM-5008-TR1
880-915MHz)
ACPM-5008-TR1
10-pin
50ohm
AV02-2480EN
smd transistor g28
transistor SMD g28
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ FEATURES Four 8-Bit DACs with Output Amplifiers Skinny 20-Pin DIP, SOIC and 20-Terminal Surface Mount Packages Microprocessor Compatible TTL/CMOS Compatible No User Trims Extended Temperature Range Operation Single Supply Operation Possible
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OCR Scan
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20-Pin
20-Terminal
AD7226
AD7226
AD544.
AD544J,
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