TRANSISTOR SMD CODE 3G Search Results

TRANSISTOR SMD CODE 3G Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR SMD CODE 3G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SMD TRANSISTOR MARKING 5c Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A	Original	PDF	BC856W= BC857W= BC858W= BC856AW-G BC858CW-G OT-323 OT-323, MIL-STD-750, QW-BTR36 SMD TRANSISTOR MARKING 5c smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Motorola transistor smd marking codes Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases	Original	PDF	OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
STK and STR integrated circuits Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram	Original	PDF	OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
3F smd transistor Abstract: transistor smd 3E smd transistor 3F transistor SMD g 28 smd transistor 3g smd transistor c6 15 TRANSISTOR SMD CODE 6.8 L5 smd transistor transistor smd list smd transistor 68 p Text: APPLICATIONS DISCRETE SEMICONDUCTORS Michael Mauer ● Matthias Öttl Power amplifiers for Japanese mobile phone system: Discretes make handies lighter This year, the Personal Handy System PHS , a new local mobile telephone system operating in the 1.9 GHz band, will go into	Original	PDF
TRANSISTOR SMD MARKING CODE 3f Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E Text: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208	Original	PDF	BC856/BC857/BC858 OT-23 OT-23, MIL-STD-202G, BC856A BC857A BC857B BC857C BC858A BC858B TRANSISTOR SMD MARKING CODE 3f transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
C5750X7R1H106M Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	PDF	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
transistor 9575 Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
BLF6G10LS-160RN Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13
Untitled Abstract: No abstract text available Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN
Untitled Abstract: No abstract text available Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10LS-160 BLF6G10LS-160
TRANSISTOR SMD MARKING CODE 3d Abstract: MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 2002 Feb 04 2003 Apr 09 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858	Original	PDF	M3D088 BC856; BC857; BC858 BC846, BC847 BC848. BC856 BC856A BC856B TRANSISTOR SMD MARKING CODE 3d MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs
74 hc 59581 Abstract: b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16 Text: 717 Technical portal and online community for Design Engineers - www.element-14.com Semiconductor Hardware & Thermal Management Page Page 727 725 725 732 739 732 749 736 725 724 723 723 724 721 720 722 726 752 728 751 Crystal Oscillator Sockets . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 74 hc 59581 b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16
BLF6G22LS-100 Abstract: RF35 TRANSISTOR SMD BV Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	PDF	BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV

BLF6G20-110 Abstract: BLF6G20LS-110 RF35 Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35
2360d Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST
Untitled Abstract: No abstract text available Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN
BLF6G10LS-200RN Abstract: BLF6G10-200RN RF35 A1118 Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 A1118
BLF6G10LS-135RN Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR
Untitled Abstract: No abstract text available Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN
RF35 Abstract: 1961 30 TRANSISTOR Text: BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	PDF	BLF6G22-180RN; BLF6G22LS-180RN BLF6G22-180RN 22LS-180RN RF35 1961 30 TRANSISTOR
2d SMD PNP TRANSISTOR Abstract: NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23 Text: CENTRAL SEMICONDUCTOR 50E D nñnb3 CEN D D D Q S l l 3Gb SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 CMPT3906 CMPT4401 CMPT4403 CMPT5086 CMPT5087 CMPT5088	OCR Scan	PDF	DGDQS11 OT-23 350mW cmpt918 2n918 cmpt2222a 2n2222a cmpt2369 2n2369 cmpt2484 2d SMD PNP TRANSISTOR NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23
1ff TRANSISTOR SMD MARKING CODE Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369	OCR Scan	PDF	DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Untitled Abstract: No abstract text available Text: SIEM ENS 5-V Low-Drop Voltage Regulator TLE 4275 Preliminary Data Features • • • • • • • • Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V0 = 1 V Very low-drop voltage Short-circuit-proof	OCR Scan	PDF	P-T0252-5-1 Q67006-A9354 Q67006-A9343 P-T0263-5-1 P-T0220-5-11 Q67000-A9342

TRANSISTOR SMD CODE 3G Search Results

TRANSISTOR SMD CODE 3G Result Highlights (6)

TRANSISTOR SMD CODE 3G Datasheets Context Search

SMD TRANSISTOR MARKING 5c

Motorola transistor smd marking codes

STK and STR integrated circuits

3F smd transistor

TRANSISTOR SMD MARKING CODE 3f

C5750X7R1H106M

SMD M05 sot23

transistor 9575

BLF6G10LS-160RN

Untitled

Untitled

TRANSISTOR SMD MARKING CODE 3d

74 hc 59581

BLF6G22LS-100

BLF6G20-110

2360d

Untitled

BLF6G10LS-200RN

BLF6G10LS-135RN

Untitled

RF35

2d SMD PNP TRANSISTOR

1ff TRANSISTOR SMD MARKING CODE

Untitled