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    BLF4G22S-100 Price and Stock

    Philips Semiconductors BLF4G22S-100

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    Bristol Electronics BLF4G22S-100 5,806
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    Quest Components BLF4G22S-100 4,644
    • 1 $199.92
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    • 100 $171.36
    • 1000 $171.36
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    NXP Semiconductors BLF4G22S-100

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
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    Vyrian BLF4G22S-100 222
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    BLF4G22S-100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF4G22S-100 NXP Semiconductors UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB Original PDF
    BLF4G22S-100,112 Philips Semiconductors RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 2.2GHZ SOT502B Original PDF